富聪科技订单满¥1000免运费
关注我们:

单个二极管

制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

全部重置
全部应用
结果
图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
JAN1N3595AUR-1/TR

JAN1N3595AUR-1/TR

SIGNAL OR COMPUTER DIODE

Microchip Technology

7,753 -
JAN1N3595AUR-1/TR

数据表

- DO-213AA Tape & Reel (TR) Active Standard 125 V 920 mV @ 100 mA Small Signal =< 200mA (Io), Any Speed 3 µs 2 nA @ 125 V - 150mA Military MIL-PRF-19500/241 Surface Mount DO-213AA -65°C ~ 175°C
JANTX1N5418US

JANTX1N5418US

DIODE GEN PURP 400V 3A D-5B

Microchip Technology

7,496 -
JANTX1N5418US

数据表

- SQ-MELF, E Bulk Active Standard 400 V 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 2 µA @ 400 V - 3A Military MIL-PRF-19500/411 Surface Mount D-5B -65°C ~ 175°C
JANTXV1N5622

JANTXV1N5622

DIODE GEN PURP 1KV 1A AXIAL

Microchip Technology

4,223 -
JANTXV1N5622

数据表

- A, Axial Bulk Active Standard 1000 V 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 2 µs 500 nA @ 1000 V - 1A Military MIL-PRF-19500/427 Through Hole A, Axial -65°C ~ 200°C
JAN1N5802US/TR

JAN1N5802US/TR

DIODE GEN PURP 50V 2.5A D-5A

Microchip Technology

4,628 -
JAN1N5802US/TR

数据表

- SQ-MELF, A Tape & Reel (TR) Active Standard 50 V 975 mV @ 2.5 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 50 V 25pF @ 10V, 1MHz 2.5A Military MIL-PRF-19500/477 Surface Mount D-5A -65°C ~ 175°C
JAN1N5416US

JAN1N5416US

DIODE GEN PURP 100V 3A AXIAL

Microchip Technology

3,311 -
JAN1N5416US

数据表

- B, Axial Bulk Active Standard 100 V 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 100 V - 3A Military MIL-PRF-19500/411 Through Hole B, Axial -65°C ~ 175°C
JAN1N5420US

JAN1N5420US

DIODE GEN PURP 600V 3A D-5B

Microchip Technology

3,721 -
JAN1N5420US

数据表

- SQ-MELF, E Bulk Active Standard 600 V 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 400 ns 1 µA @ 600 V - 3A Military MIL-PRF-19500/411 Surface Mount D-5B -65°C ~ 175°C
1N6662

1N6662

DIODE GEN PURP 400V 500MA DO35

Microchip Technology

6,671 -
1N6662

数据表

- DO-204AH, DO-35, Axial Bulk Active Standard 400 V 1 V @ 400 mA Standard Recovery >500ns, > 200mA (Io) - 50 nA @ 400 V - 500mA - - Through Hole DO-204AH (DO-35) -65°C ~ 175°C
JANTX1N5419US/TR

JANTX1N5419US/TR

UFR,FRR

Microchip Technology

4,193 -
JANTX1N5419US/TR

数据表

- SQ-MELF, B Tape & Reel (TR) Active Standard 500 V 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 250 ns 1 µA @ 500 V - 3A Military MIL-PRF-19500/411 Surface Mount B, SQ-MELF -65°C ~ 175°C
1N5415US

1N5415US

DIODE GEN PURP 50V 3A D-5B

Microchip Technology

6,099 -
1N5415US

数据表

- SQ-MELF, E Bulk Discontinued at Digi-Key Standard 50 V 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 50 V - 3A - - Surface Mount D-5B -65°C ~ 175°C
1N5808/TR

1N5808/TR

RECTIFIER UFR,FRR

Microchip Technology

3,303 -
1N5808/TR

数据表

* - Tape & Reel (TR) Active - - - - - - - - - - - - -
富聪科技

搜索

富聪科技

产品

富聪科技

电话

富聪科技

用户