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制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
JANTXV1N5621

JANTXV1N5621

DIODE GEN PURP 800V 1A AXIAL

Microchip Technology

9,867 -
JANTXV1N5621

数据表

- A, Axial Bulk Active Standard 800 V 1.6 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 300 ns 500 nA @ 800 V 20pF @ 12V, 1MHz 1A Military MIL-PRF-19500/429 Through Hole A, Axial -65°C ~ 175°C
JANTX1N5417US

JANTX1N5417US

DIODE GEN PURP 200V 3A D-5B

Microchip Technology

9,866 -
JANTX1N5417US

数据表

- SQ-MELF, E Bulk Active Standard 200 V 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 200 V - 3A Military MIL-PRF-19500/411 Surface Mount D-5B -65°C ~ 175°C
1N5808

1N5808

DIODE RECT ULT FAST REC B-PKG

Microchip Technology

9,730 -
1N5808

数据表

* - Bulk Active - - - - - - - - - - - - -
1N5810

1N5810

DIODE GEN PURP 6A AXIAL

Microchip Technology

9,053 -
1N5810

数据表

- Axial Bulk Active Standard - 875 mV @ 4 A Standard Recovery >500ns, > 200mA (Io) - - - 6A - - Through Hole Axial -
JANTXV1N5621/TR

JANTXV1N5621/TR

DIODE GEN PURP 800V 1A

Microchip Technology

9,227 -
JANTXV1N5621/TR

数据表

- A, Axial Tape & Reel (TR) Active Standard 800 V 1.6 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 300 ns 500 nA @ 800 V 20pF @ 12V, 1MHz 1A Military MIL-PRF-19500/429 Through Hole A, Axial -65°C ~ 175°C
JANTXV1N6640/TR

JANTXV1N6640/TR

DIODE GEN PURP 50V 300MA DO35

Microchip Technology

9,903 -
JANTXV1N6640/TR

数据表

- DO-204AH, DO-35, Axial Tape & Reel (TR) Active Standard 50 V 1 V @ 200 mA Fast Recovery =< 500ns, > 200mA (Io) 4 ns 100 nA @ 50 V - 300mA Military MIL-PRF-19500/609 Through Hole DO-204AH (DO-35) -65°C ~ 175°C
JANTXV1N6639US/TR

JANTXV1N6639US/TR

SIGNAL OR COMPUTER DIODE

Microchip Technology

3,836 -
JANTXV1N6639US/TR

数据表

* - Tape & Reel (TR) Active - - - - - - - - - - - - -
JAN1N5550US/TR

JAN1N5550US/TR

DIODE GEN PURP 200V 3A D-5B

Microchip Technology

3,839 -
JAN1N5550US/TR

数据表

- SQ-MELF, E Tape & Reel (TR) Active Standard 200 V 1.2 V @ 9 A Standard Recovery >500ns, > 200mA (Io) 2 µs 1 µA @ 200 V - 3A Military MIL-PRF-19500/420 Surface Mount D-5B -65°C ~ 175°C
JANTX1N5188/TR

JANTX1N5188/TR

DIODE GEN PURP 400V 3A

Microchip Technology

6,788 -
JANTX1N5188/TR

数据表

- B, Axial Tape & Reel (TR) Active Standard 400 V 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 250 ns 2 µA @ 400 V - 3A Military MIL-PRF-19500/424 Through Hole B, Axial -65°C ~ 175°C
JAN1N4153UR-1

JAN1N4153UR-1

DIODE GEN PURP 50V 150MA DO213AA

Microchip Technology

4,423 -
JAN1N4153UR-1

数据表

- DO-213AA Bulk Active Standard 50 V 880 mV @ 20 mA Small Signal =< 200mA (Io), Any Speed 4 ns - - 150mA Military MIL-PRF-19500/337 Surface Mount DO-213AA -65°C ~ 175°C
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