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| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)（最大值） | 电压 - 正向 (Vf)（最大值）@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流（Io） | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
JANTXV1N6639DIODE GEN PURP 75V 300MA D-5B Microchip Technology |
7,645 | - |
|
数据表 |
- | D, Axial | Bulk | Active | Standard | 75 V | 1.2 V @ 500 mA | Fast Recovery =< 500ns, > 200mA (Io) | 4 ns | 100 nA @ 75 V | - | 300mA | Military | MIL-PRF-19500/609 | Through Hole | D-5D | -65°C ~ 175°C |
|
|
JANTXV1N6641DIODE GEN PURP 50V 300MA D-5B Microchip Technology |
9,562 | - |
|
数据表 |
- | D, Axial | Bulk | Active | Standard | 50 V | 1.1 V @ 200 mA | Fast Recovery =< 500ns, > 200mA (Io) | 5 ns | 100 nA @ 50 V | - | 300mA | Military | MIL-PRF-19500/609 | Through Hole | D-5D | -65°C ~ 175°C |
|
|
JANTXV1N6643DIODE GEN PURP 75V 300MA D-5B Microchip Technology |
6,877 | - |
|
数据表 |
- | D, Axial | Bulk | Active | Standard | 75 V | 1.2 V @ 100 mA | Fast Recovery =< 500ns, > 200mA (Io) | 20 ns | 500 nA @ 75 V | 5pF @ 0V, 1MHz | 300mA | Military | MIL-PRF-19500/578 | Through Hole | D-5D | -65°C ~ 175°C |
|
JANTXV1N6640DIODE GEN PURP 50V 300MA DO35 Microchip Technology |
3,698 | - |
|
数据表 |
- | DO-204AH, DO-35, Axial | Bulk | Active | Standard | 50 V | 1 V @ 200 mA | Fast Recovery =< 500ns, > 200mA (Io) | 4 ns | 100 nA @ 50 V | - | 300mA | Military | MIL-PRF-19500/609 | Through Hole | DO-204AH (DO-35) | -65°C ~ 175°C |
|
|
JAN1N5550USDIODE GEN PURP 200V 3A D-5B Microchip Technology |
3,859 | - |
|
数据表 |
- | SQ-MELF, E | Bulk | Discontinued at Digi-Key | Standard | 200 V | 1.2 V @ 9 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 1 µA @ 200 V | - | 3A | Military | MIL-PRF-19500/420 | Surface Mount | D-5B | -65°C ~ 175°C |
|
1N6628/TRDIODE GEN PURP 600V 1.75A A-PAK Microchip Technology |
6,200 | - |
|
数据表 |
- | A, Axial | Tape & Reel (TR) | Active | Standard | 600 V | 1.35 V @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 45 ns | 2 µA @ 600 V | - | 1.75A | - | - | Through Hole | A, Axial | -65°C ~ 150°C |
|
JANTXV1N5806US/TRDIODE GEN PURP 150V 1A D-5A Microchip Technology |
9,425 | - |
|
数据表 |
- | SQ-MELF, A | Tape & Reel (TR) | Active | Standard | 150 V | 875 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 1 µA @ 150 V | 25pF @ 10V, 1MHz | 1A | Military | MIL-PRF-19500/477 | Surface Mount | D-5A | -65°C ~ 175°C |
|
|
JAN1N3595AUR-1DIODE GP 125V 150MA DO213AA Microchip Technology |
2,527 | - |
|
数据表 |
- | DO-213AA | Bulk | Active | Standard | 125 V | 920 mV @ 100 mA | Small Signal =< 200mA (Io), Any Speed | 3 µs | 2 nA @ 125 V | - | 150mA | Military | MIL-PRF-19500/241 | Surface Mount | DO-213AA | -65°C ~ 175°C |
|
|
JAN1N5802USDIODE GEN PURP 50V 2.5A D-5A Microchip Technology |
2,019 | - |
|
数据表 |
- | SQ-MELF, A | Bulk | Active | Standard | 50 V | 975 mV @ 2.5 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 1 µA @ 50 V | 25pF @ 10V, 1MHz | 2.5A | Military | MIL-PRF-19500/477 | Surface Mount | D-5A | -65°C ~ 175°C |
|
|
JANTX1N5188DIODE GEN PURP 400V 3A AXIAL Microchip Technology |
7,156 | - |
|
数据表 |
- | B, Axial | Bulk | Active | Standard | 400 V | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 250 ns | 2 µA @ 400 V | - | 3A | Military | MIL-PRF-19500/424 | Through Hole | B, Axial | -65°C ~ 175°C |
