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单个二极管
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)（最大值） | 电压 - 正向 (Vf)（最大值）@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流（Io） | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
JANTXV1N6643USDIODE GEN PURP 75V 300MA D-5D Microchip Technology |
6,715 | - |
|
数据表 |
- | SQ-MELF, D | Bulk | Discontinued at Digi-Key | Standard | 75 V | 1.2 V @ 100 mA | Fast Recovery =< 500ns, > 200mA (Io) | 20 ns | 500 nA @ 75 V | 5pF @ 0V, 1MHz | 300mA | Military | MIL-PRF-19500/578 | Surface Mount | D-5D | -65°C ~ 175°C |
|
JANTX1N6639US/TRDIODE GEN PURP 75V 300MA D-5D Microchip Technology |
8,470 | - |
|
数据表 |
- | SQ-MELF, D | Tape & Reel (TR) | Active | Standard | 75 V | 1.2 V @ 300 mA | Fast Recovery =< 500ns, > 200mA (Io) | 4 ns | 100 nA @ 75 V | - | 300mA | Military | MIL-PRF-19500/609 | Surface Mount | D-5D | -65°C ~ 175°C |
|
1N6623DIODE GEN PURP 880V 1A AXIAL Microchip Technology |
9,627 | - |
|
数据表 |
- | A, Axial | Bulk | Active | Standard | 880 V | 1.55 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 500 nA @ 880 V | 10pF @ 10V, 1MHz | 1A | - | - | Through Hole | A, Axial | -65°C ~ 150°C |
|
JANTX1N5550USDIODE GEN PURP 200V 5A B SQ-MELF Microchip Technology |
4,919 | - |
|
数据表 |
- | SQ-MELF, B | Bulk | Active | Standard | 200 V | 1.2 V @ 9 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 1 µA @ 200 V | - | 5A | Military | MIL-PRF-19500/420 | Surface Mount | B, SQ-MELF | -65°C ~ 175°C |
|
JANTX1N5552USDIODE GEN PURP 600V 5A B SQ-MELF Microchip Technology |
4,518 | - |
|
数据表 |
- | SQ-MELF, B | Bulk | Active | Standard | 600 V | 1.2 V @ 9 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 1 µA @ 600 V | - | 5A | Military | MIL-PRF-19500/420 | Surface Mount | B, SQ-MELF | -65°C ~ 175°C |
|
|
JANTX1N5553USDIODE GEN PURP 800V 3A D-5B Microchip Technology |
5,833 | - |
|
数据表 |
- | SQ-MELF, E | Bulk | Active | Standard | 800 V | 1.3 V @ 9 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 1 µA @ 800 V | - | 3A | Military | MIL-PRF-19500/420 | Surface Mount | D-5B | -65°C ~ 175°C |
|
|
JANTX1N5554USDIODE GEN PURP 3A B SQ-MELF Microchip Technology |
5,610 | - |
|
数据表 |
- | SQ-MELF, B | Bulk | Active | Standard | - | 1.3 V @ 9 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | - | - | 3A | Military | MIL-PRF-19500/420 | Surface Mount | B, SQ-MELF | -65°C ~ 175°C |
|
JANTXV1N6638/TRDIODE GEN PURP 125V 300MA D-5D Microchip Technology |
8,552 | - |
|
数据表 |
- | D, Axial | Tape & Reel (TR) | Active | Standard | 125 V | 1.1 V @ 200 mA | Fast Recovery =< 500ns, > 200mA (Io) | 20 ns | 500 nA @ 125 V | 2.5pF @ 0V, 1MHz | 300mA | Military | MIL-PRF-19500/578 | Through Hole | D-5D | -65°C ~ 175°C |
|
|
CD1A80DIODE SCHOTTKY 80V 1A DIE Microchip Technology |
3,994 | - |
|
数据表 |
- | Die | Tape & Reel (TR) | Active | Schottky | 80 V | 750 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 80 V | - | 1A | Military | MIL-PRF-19500/586 | Surface Mount | Die | -55°C ~ 125°C |
|
|
JAN1N5552USDIODE GEN PURP 600V 3A D-5B Microchip Technology |
2,181 | - |
|
数据表 |
- | SQ-MELF, E | Bulk | Discontinued at Digi-Key | Standard | 600 V | 1.2 V @ 9 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 1 µA @ 600 V | - | 3A | Military | MIL-PRF-19500/420 | Surface Mount | D-5B | -65°C ~ 175°C |
