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制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
1N3595US/TR

1N3595US/TR

DIODE GEN PURP 4A B SQ-MELF

Microchip Technology

8,078 -
1N3595US/TR

数据表

- SQ-MELF, B Tape & Reel (TR) Active Standard - 1 V @ 200 mA Standard Recovery >500ns, > 200mA (Io) 3 µs 1 nA @ 125 V - 4A - - Surface Mount B, SQ-MELF -65°C ~ 150°C
1N3595AUR-1

1N3595AUR-1

DIODE GP 125V 150MA DO213AA

Microchip Technology

7,619 -
1N3595AUR-1

数据表

- DO-213AA Bulk Active Standard 125 V 1 V @ 200 mA Small Signal =< 200mA (Io), Any Speed 3 µs 2 nA @ 125 V - 150mA - - Surface Mount DO-213AA -65°C ~ 175°C
JANTX1N5550US/TR

JANTX1N5550US/TR

DIODE GEN PURP 200V 5A B SQ-MELF

Microchip Technology

3,859 -
JANTX1N5550US/TR

数据表

- SQ-MELF, B Tape & Reel (TR) Active Standard 200 V 1.2 V @ 9 A Standard Recovery >500ns, > 200mA (Io) 2 µs 1 µA @ 200 V - 5A Military MIL-PRF-19500/420 Surface Mount B, SQ-MELF -65°C ~ 175°C
JANTX1N5552US/TR

JANTX1N5552US/TR

DIODE GEN PURP 600V 5A B SQ-MELF

Microchip Technology

2,440 -
JANTX1N5552US/TR

数据表

- SQ-MELF, B Tape & Reel (TR) Active Standard 600 V 1.2 V @ 9 A Standard Recovery >500ns, > 200mA (Io) 2 µs 1 µA @ 600 V - 5A Military MIL-PRF-19500/420 Surface Mount B, SQ-MELF -65°C ~ 175°C
JANTX1N5554US/TR

JANTX1N5554US/TR

DIODE GEN PURP 3A B SQ-MELF

Microchip Technology

6,623 -
JANTX1N5554US/TR

数据表

- SQ-MELF, B Tape & Reel (TR) Active Standard - 1.3 V @ 9 A Standard Recovery >500ns, > 200mA (Io) 2 µs - - 3A Military MIL-PRF-19500/420 Surface Mount B, SQ-MELF -65°C ~ 175°C
JANTX1N5551US/TR

JANTX1N5551US/TR

DIODE GEN PURP 400V 5A B SQ-MELF

Microchip Technology

7,797 -
JANTX1N5551US/TR

数据表

- SQ-MELF, B Tape & Reel (TR) Active Standard 400 V 1.2 V @ 9 A Standard Recovery >500ns, > 200mA (Io) 2 µs 1 µA @ 400 V - 5A Military MIL-PRF-19500/420 Surface Mount B, SQ-MELF -65°C ~ 175°C
JANTX1N5553US/TR

JANTX1N5553US/TR

DIODE GEN PURP 800V 3A D-5B

Microchip Technology

9,117 -
JANTX1N5553US/TR

数据表

- SQ-MELF, E Tape & Reel (TR) Active Standard 800 V 1.3 V @ 9 A Standard Recovery >500ns, > 200mA (Io) 2 µs 1 µA @ 800 V - 3A Military MIL-PRF-19500/420 Surface Mount D-5B -65°C ~ 175°C
JANTX1N6640

JANTX1N6640

DIODE GEN PURP 50V 300MA AXIAL

Microchip Technology

6 -
JANTX1N6640

数据表

- D, Axial Bulk Active Standard 50 V 1 V @ 200 mA Fast Recovery =< 500ns, > 200mA (Io) 4 ns 100 nA @ 50 V - 300mA Military MIL-PRF-19500/609 Through Hole D-5D -65°C ~ 175°C
1N6623/TR

1N6623/TR

DIODE GEN PURP 880V 1A

Microchip Technology

4,488 -
1N6623/TR

数据表

- A, Axial Tape & Reel (TR) Active Standard 880 V 1.55 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 500 nA @ 880 V 10pF @ 10V, 1MHz 1A - - Through Hole A, Axial -65°C ~ 150°C
1N6623E3

1N6623E3

DIODE GEN PURP 800V 1.5A AXIAL

Microchip Technology

6,221 -
1N6623E3

数据表

- Axial Bulk Active Standard 800 V 1.8 V @ 1.5 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 500 nA @ 800 V - 1.5A - - Through Hole Axial -65°C ~ 175°C
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