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单个二极管
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)（最大值） | 电压 - 正向 (Vf)（最大值）@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流（Io） | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
JAN1N5615USDIODE GEN PURP 200V 1A D-5A Microchip Technology |
8,895 | - |
|
数据表 |
- | SQ-MELF, A | Bulk | Active | Standard | 200 V | 800 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 500 µA @ 200 V | - | 1A | Military | MIL-PRF-19500/429 | Surface Mount | D-5A | -65°C ~ 200°C |
|
JAN1N5619USDIODE GEN PURP 600V 1A D-5A Microchip Technology |
9,775 | - |
|
数据表 |
- | SQ-MELF, A | Bulk | Active | Standard | 600 V | 1.6 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 250 ns | 500 nA @ 600 V | 25pF @ 12V, 1MHz | 1A | Military | MIL-PRF-19500/429 | Surface Mount | D-5A | -65°C ~ 175°C |
|
JANTXV1N4246/TRDIODE GEN PURP 400V 1A Microchip Technology |
4,194 | - |
|
数据表 |
- | A, Axial | Tape & Reel (TR) | Active | Standard | 400 V | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 5 µs | 1 µA @ 400 V | - | 1A | Military | MIL-PRF-19500/286 | Through Hole | A, Axial | -65°C ~ 175°C |
|
JAN1N5620US/TRDIODE GEN PURP 800V 1A D-5A Microchip Technology |
5,645 | - |
|
数据表 |
- | SQ-MELF, A | Tape & Reel (TR) | Active | Standard | 800 V | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 500 nA @ 800 V | - | 1A | Military | MIL-PRF-19500/427 | Surface Mount | D-5A | -65°C ~ 200°C |
|
JAN1N5811US/TRDIODE GEN PURP 150V 6A B SQ-MELF Microchip Technology |
5,641 | - |
|
数据表 |
- | SQ-MELF, B | Tape & Reel (TR) | Active | Standard | 150 V | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 150 V | 60pF @ 10V, 1MHz | 6A | Military | MIL-PRF-19500/477 | Surface Mount | B, SQ-MELF | -65°C ~ 175°C |
|
JAN1N5809US/TRDIODE GP 100V 3A SQ-MELF B Microchip Technology |
3,436 | - |
|
数据表 |
- | SQ-MELF, B | Tape & Reel (TR) | Active | Standard | 100 V | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 100 V | 60pF @ 10V, 1MHz | 3A | Military | MIL-PRF-19500/477 | Surface Mount | B, SQ-MELF | -65°C ~ 175°C |
|
JANTX1N5804USDIODE GEN PURP 100V 1A D-5A Microchip Technology |
5,110 | - |
|
数据表 |
- | SQ-MELF, A | Bulk | Active | Standard | 100 V | 875 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 1 µA @ 100 V | 25pF @ 10V, 1MHz | 1A | Military | MIL-PRF-19500/477 | Surface Mount | D-5A | -65°C ~ 175°C |
|
|
CD5821DIODE SCHOTTKY 30V 3A DIE Microchip Technology |
7,934 | - |
|
数据表 |
- | Die | Tape & Reel (TR) | Active | Schottky | 30 V | 550 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 30 V | - | 3A | - | - | Surface Mount | Die | -65°C ~ 125°C |
|
|
JAN1N5418USDIODE GEN PURP 400V 3A D-5B Microchip Technology |
6,340 | - |
|
数据表 |
- | SQ-MELF, E | Bulk | Active | Standard | 400 V | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 1 µA @ 400 V | - | 3A | Military | MIL-PRF-19500/411 | Surface Mount | D-5B | -65°C ~ 175°C |
|
|
JAN1N5419USDIODE GEN PURP 500V 3A D-5B Microchip Technology |
5,898 | - |
|
数据表 |
- | SQ-MELF, E | Bulk | Active | Standard | 500 V | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 250 ns | 1 µA @ 500 V | - | 3A | Military | MIL-PRF-19500/411 | Surface Mount | D-5B | -65°C ~ 175°C |
