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制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
JAN1N5614US

JAN1N5614US

DIODE GEN PURP 200V 1A D-5A

Microchip Technology

8,469 -
JAN1N5614US

数据表

- SQ-MELF, A Bulk Active Standard 200 V 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 2 µs 500 nA @ 200 V - 1A Military MIL-PRF-19500/427 Surface Mount D-5A -65°C ~ 200°C
JAN1N5621US

JAN1N5621US

DIODE GEN PURP 800V 1A D-5A

Microchip Technology

6,653 -
JAN1N5621US

数据表

- SQ-MELF, A Bulk Discontinued at Digi-Key Standard 800 V 1.6 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 300 ns 500 nA @ 800 V - 1A Military MIL-PRF-19500/429 Surface Mount D-5A -65°C ~ 175°C
1N5620US

1N5620US

DIODE GEN PURP 800V 1A D5A

Microchip Technology

5,860 -
1N5620US

数据表

- SQ-MELF, A Bulk Active Standard 800 V 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 2 µs 500 nA @ 800 V - 1A - - Surface Mount D-5A -65°C ~ 200°C
1N5621US/TR

1N5621US/TR

DIODE GEN PURP 800V 1A D-5A

Microchip Technology

7,341 -
1N5621US/TR

数据表

- SQ-MELF, A Tape & Reel (TR) Active Standard 800 V 1.6 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 300 ns 500 nA @ 800 V 20pF @ 12V, 1MHz 1A - - Surface Mount D-5A -65°C ~ 175°C
1N457AUR-1/TR

1N457AUR-1/TR

SIGNAL OR COMPUTER DIODE

Microchip Technology

9,127 -
1N457AUR-1/TR

数据表

- - Tape & Reel (TR) Active - - - - - - - - - - - - -
1N5807US

1N5807US

DIODE GEN PURP 50V 3A B SQ-MELF

Microchip Technology

5,610 -
1N5807US

数据表

- SQ-MELF, B Bulk Discontinued at Digi-Key Standard 50 V 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 50 V 60pF @ 10V, 1MHz 3A - - Surface Mount B, SQ-MELF -65°C ~ 175°C
JANTX1N6640US/TR

JANTX1N6640US/TR

DIODE GEN PURP 50V 300MA D-5D

Microchip Technology

7,304 -
JANTX1N6640US/TR

数据表

- SQ-MELF, D Tape & Reel (TR) Active Standard 50 V 1 V @ 200 mA Fast Recovery =< 500ns, > 200mA (Io) 4 ns 100 nA @ 50 V - 300mA Military MIL-PRF-19500/609 Surface Mount D-5D -65°C ~ 175°C
JAN1N5419/TR

JAN1N5419/TR

DIODE GEN PURP 500V 3A

Microchip Technology

2,683 -
JAN1N5419/TR

数据表

- B, Axial Tape & Reel (TR) Active Standard 500 V 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 250 ns 1 µA @ 500 V - 3A Military MIL-PRF-19500/411 Through Hole B, Axial -65°C ~ 175°C
JAN1N5619US/TR

JAN1N5619US/TR

DIODE GEN PURP 600V 1A D-5A

Microchip Technology

4,616 -
JAN1N5619US/TR

数据表

- SQ-MELF, A Tape & Reel (TR) Active Standard 600 V 1.6 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 250 ns 500 nA @ 600 V 25pF @ 12V, 1MHz 1A Military MIL-PRF-19500/429 Surface Mount D-5A -65°C ~ 175°C
JAN1N5614US/TR

JAN1N5614US/TR

DIODE GEN PURP 200V 1A D-5A

Microchip Technology

5,028 -
JAN1N5614US/TR

数据表

- SQ-MELF, A Tape & Reel (TR) Active Standard 200 V 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 2 µs 500 nA @ 200 V - 1A Military MIL-PRF-19500/427 Surface Mount D-5A -65°C ~ 200°C
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