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制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
JANTX1N5415/TR

JANTX1N5415/TR

DIODE GEN PURP 50V 3A

Microchip Technology

5,617 -
JANTX1N5415/TR

数据表

- B, Axial Tape & Reel (TR) Active Standard 50 V 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 50 V - 3A Military MIL-PRF-19500/411 Through Hole B, Axial -65°C ~ 175°C
1N457AUR/TR

1N457AUR/TR

SIGNAL OR COMPUTER DIODE

Microchip Technology

9,291 -
1N457AUR/TR

数据表

- - Tape & Reel (TR) Active - - - - - - - - - - - - -
JANTX1N5418

JANTX1N5418

DIODE GEN PURP 400V 3A AXIAL

Microchip Technology

75 -
JANTX1N5418

数据表

- B, Axial Bulk Active Standard 400 V 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 400 V - 3A Military MIL-PRF-19500/411 Through Hole B, Axial -65°C ~ 175°C
JANTX1N5550

JANTX1N5550

DIODE GEN PURP 200V 5A AXIAL

Microchip Technology

83 -
JANTX1N5550

数据表

- B, Axial Bulk Active Standard 200 V 1.2 V @ 9 A Standard Recovery >500ns, > 200mA (Io) 2 µs 1 µA @ 200 V - 5A Military MIL-PRF-19500/420 Through Hole B, Axial -65°C ~ 175°C
APT60D100SG

APT60D100SG

DIODE GEN PURP 1KV 60A D3

Microchip Technology

3,606 -
APT60D100SG

数据表

- TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active Standard 1000 V 2.5 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 280 ns 250 µA @ 1000 V - 60A - - Surface Mount D3PAK -55°C ~ 175°C
JAN1N5819-1/TR

JAN1N5819-1/TR

DIODE SCHOTTKY 45V 1A DO41

Microchip Technology

7,959 -
JAN1N5819-1/TR

数据表

- DO-204AL, DO-41, Axial Tape & Reel (TR) Active Schottky 45 V 490 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 50 µA @ 45 V - 1A Military MIL-PRF-19500/586 Through Hole DO-41 -65°C ~ 150°C
1N5618US/TR

1N5618US/TR

DIODE GEN PURP 600V 1A D-5A

Microchip Technology

9,331 -
1N5618US/TR

数据表

- SQ-MELF, A Tape & Reel (TR) Active Standard 600 V 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 2 µs 500 nA @ 600 V - 1A - - Surface Mount D-5A -65°C ~ 200°C
1N5811USE3/TR

1N5811USE3/TR

DIODE GEN PURP 150V 3A B SQ-MELF

Microchip Technology

4,780 -
1N5811USE3/TR

数据表

- SQ-MELF, B Tape & Reel (TR) Active Standard 150 V 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns - - 3A - - Surface Mount B, SQ-MELF -65°C ~ 175°C
1N5550USE3/TR

1N5550USE3/TR

DIODE GEN PURP 200V 3A B SQ-MELF

Microchip Technology

9,905 -
1N5550USE3/TR

数据表

- SQ-MELF, B Tape & Reel (TR) Active Standard 200 V 1.2 V @ 9 A Standard Recovery >500ns, > 200mA (Io) 2 µs 1 µA @ 200 V - 3A - - Surface Mount B, SQ-MELF -65°C ~ 175°C
1N457AUR-1

1N457AUR-1

DIODE GP 70V 150MA DO213AA

Microchip Technology

9,188 -
1N457AUR-1

数据表

- DO-213AA Bulk Active Standard 70 V 1 V @ 100 mA Small Signal =< 200mA (Io), Any Speed - 1 µA @ 70 V - 150mA - - Surface Mount DO-213AA -65°C ~ 150°C
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