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单个二极管
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)（最大值） | 电压 - 正向 (Vf)（最大值）@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流（Io） | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1N5811E3/TRDIODE GEN PURP 150V 3A B AXIAL Microchip Technology |
2,225 | - |
|
数据表 |
- | B, Axial | Tape & Reel (TR) | Active | Standard | 150 V | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 150 V | 60pF @ 10V, 1MHz | 3A | - | - | Through Hole | B, Axial | -65°C ~ 175°C |
|
|
JANTX1N5415DIODE GEN PURP 50V 3A AXIAL Microchip Technology |
8,746 | - |
|
数据表 |
- | B, Axial | Bulk | Active | Standard | 50 V | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 1 µA @ 50 V | - | 3A | Military | MIL-PRF-19500/411 | Through Hole | B, Axial | -65°C ~ 175°C |
|
|
JANTX1N5811/TRDIODE GEN PURP 150V 3A B AXIAL Microchip Technology |
6,347 | - |
|
数据表 |
- | B, Axial | Tape & Reel (TR) | Active | Standard | 150 V | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 150 V | 60pF @ 10V, 1MHz | 3A | Military | MIL-PRF-19500/477 | Through Hole | B, Axial | -65°C ~ 175°C |
|
APT15D60KGDIODE GP 600V 15A TO220 Microchip Technology |
88 | - |
|
数据表 |
- | TO-220-2 | Tube | Active | Standard | 600 V | 1.8 V @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | 80 ns | 250 µA @ 600 V | - | 15A | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
MSC010SDA070KDIODE SIL CARB 700V 10A TO220-2 Microchip Technology |
55 | - |
|
数据表 |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 700 V | 1.5 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | - | - | 10A | - | - | Through Hole | TO-220-2 | - |
|
JAN1N5802/TRDIODE GEN PURP 50V 2.5A Microchip Technology |
3,500 | - |
|
数据表 |
- | A, Axial | Tape & Reel (TR) | Active | Standard | 50 V | 975 mV @ 2.5 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 1 µA @ 50 V | 25pF @ 10V, 1MHz | 2.5A | Military | MIL-PRF-19500/477 | Through Hole | A, Axial | -65°C ~ 175°C |
|
JANTX1N5616USDIODE GEN PURP 400V 1A D-5A Microchip Technology |
4,458 | - |
|
数据表 |
- | SQ-MELF, A | Bulk | Active | Standard | 400 V | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 500 nA @ 400 V | - | 1A | Military | MIL-PRF-19500/427 | Surface Mount | D-5A | -65°C ~ 200°C |
|
|
JAN1N5186DIODE GEN PURP 100V 3A B AXIAL Microchip Technology |
9,576 | - |
|
数据表 |
- | B, Axial | Bulk | Active | Standard | 120 V | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 2 µA @ 100 V | - | 3A | Military | MIL-PRF-19500/424 | Through Hole | B, Axial | -65°C ~ 175°C |
|
|
JANTX1N4249/TRDIODE GEN PURP 1KV 1A Microchip Technology |
8,512 | - |
|
数据表 |
- | A, Axial | Tape & Reel (TR) | Active | Standard | 1000 V | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 5 µs | 1 µA @ 1 V | - | 1A | Military | MIL-PRF-19500/286 | Through Hole | A, Axial | -65°C ~ 175°C |
|
|
1N5552US/TRDIODE GEN PURP 600V 3A D-5B Microchip Technology |
3,833 | - |
|
数据表 |
- | SQ-MELF, E | Tape & Reel (TR) | Active | Standard | 600 V | 1.2 V @ 9 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 1 µA @ 600 V | - | 3A | - | - | Surface Mount | D-5B | -65°C ~ 175°C |
