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单个二极管
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)（最大值） | 电压 - 正向 (Vf)（最大值）@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流（Io） | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
JANTX1N5809/TRDIODE GEN PURP 100V 3A Microchip Technology |
8,243 | - |
|
数据表 |
- | B, Axial | Tape & Reel (TR) | Active | Standard | 100 V | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 100 V | 60pF @ 10V, 1MHz | 3A | Military | MIL-PRF-19500/477 | Through Hole | B, Axial | -65°C ~ 175°C |
|
|
JANTX1N5807/TRDIODE GEN PURP 50V 3A Microchip Technology |
4,655 | - |
|
数据表 |
- | B, Axial | Tape & Reel (TR) | Active | Standard | 50 V | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 50 V | 60pF @ 10V, 1MHz | 3A | Military | MIL-PRF-19500/477 | Through Hole | B, Axial | -65°C ~ 175°C |
|
1N5811USE3DIODE GEN PURP 150V 3A B SQ-MELF Microchip Technology |
6,776 | - |
|
数据表 |
- | SQ-MELF, B | Bulk | Active | Standard | 150 V | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | - | - | 3A | - | - | Surface Mount | B, SQ-MELF | -65°C ~ 175°C |
|
|
1N457AURDIODE GP 70V 150MA DO213AA Microchip Technology |
2,234 | - |
|
数据表 |
- | DO-213AA | Bulk | Active | Standard | 70 V | 1 V @ 100 mA | Small Signal =< 200mA (Io), Any Speed | - | 1 µA @ 70 V | - | 150mA | - | - | Surface Mount | DO-213AA | -65°C ~ 150°C |
|
|
1N3614/TRDIODE GEN PURP 800V 1A Microchip Technology |
7,516 | - |
|
数据表 |
- | A, Axial | Tape & Reel (TR) | Active | Standard | 800 V | 1.1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | - | 1 µA @ 800 V | - | 1A | - | - | Through Hole | A, Axial | -65°C ~ 175°C |
|
1N5550US/TRDIODE GEN PURP 200V 3A B SQ-MELF Microchip Technology |
5,051 | - |
|
数据表 |
- | SQ-MELF, B | Tape & Reel (TR) | Active | Standard | 200 V | 1.2 V @ 9 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 1 µA @ 200 V | - | 3A | - | - | Surface Mount | B, SQ-MELF | -65°C ~ 175°C |
|
|
1N5550USE3DIODE GEN PURP 200V 3A B SQ-MELF Microchip Technology |
8,708 | - |
|
数据表 |
- | SQ-MELF, B | Bulk | Active | Standard | 200 V | 1.2 V @ 9 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 1 µA @ 200 V | - | 3A | - | - | Surface Mount | B, SQ-MELF | -65°C ~ 175°C |
|
JAN1N5819-1DIODE SCHOTTKY 45V 1A DO41 Microchip Technology |
5,866 | - |
|
数据表 |
- | DO-204AL, DO-41, Axial | Bulk | Active | Schottky | 45 V | 490 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50 µA @ 45 V | - | 1A | Military | MIL-PRF-19500/586 | Through Hole | DO-41 | -65°C ~ 150°C |
|
|
1N5809E3/TRDIODE GEN PURP 100V 6A B AXIAL Microchip Technology |
3,919 | - |
|
数据表 |
- | B, Axial | Tape & Reel (TR) | Active | Standard | 100 V | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | - | - | 6A | - | - | Through Hole | B, Axial | -65°C ~ 175°C |
|
|
1N5551USE3DIODE GEN PURP 400V 3A B SQ-MELF Microchip Technology |
7,996 | - |
|
数据表 |
- | SQ-MELF, B | Bulk | Active | Standard | 400 V | 1.2 V @ 9 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 1 µA @ 400 V | - | 3A | - | - | Surface Mount | B, SQ-MELF | -65°C ~ 175°C |
