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| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)（最大值） | 电压 - 正向 (Vf)（最大值）@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流（Io） | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IDK02G65C5XTMA1DIODE SIL CARB 650V 2A TO263-2 Infineon Technologies |
4,519 | - |
|
数据表 |
CoolSiC™+ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 650 V | 1.8 V @ 2 A | No Recovery Time > 500mA (Io) | 0 ns | 330 µA @ 650 V | 70pF @ 1V, 1MHz | 2A | - | - | Surface Mount | PG-TO263-2 | -55°C ~ 175°C |
|
|
IDK04G65C5XTMA1DIODE SIL CARB 650V 4A TO263-2 Infineon Technologies |
4,835 | - |
|
数据表 |
CoolSiC™+ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 650 V | 1.8 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 670 µA @ 650 V | 130pF @ 1V, 1MHz | 4A | - | - | Surface Mount | PG-TO263-2 | -55°C ~ 175°C |
|
|
IDK06G65C5XTMA1DIODE SIL CARB 650V 6A TO263-2 Infineon Technologies |
8,619 | - |
|
数据表 |
CoolSiC™+ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 650 V | 1.8 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 1.1 mA @ 650 V | 190pF @ 1V, 1MHz | 6A | - | - | Surface Mount | PG-TO263-2 | -55°C ~ 175°C |
|
IDL04G65C5XUMA1DIODE SIL CARBIDE 650V 4A VSON-4 Infineon Technologies |
2,590 | - |
|
数据表 |
CoolSiC™+ | 4-PowerTSFN | Tape & Reel (TR) | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 650 V | 1.7 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 70 µA @ 650 V | 130pF @ 1V, 1MHz | 4A | - | - | Surface Mount | PG-VSON-4 | -55°C ~ 175°C |
|
|
IDL06G65C5XUMA1DIODE SIL CARBIDE 650V 6A VSON-4 Infineon Technologies |
9,095 | - |
|
数据表 |
CoolSiC™+ | 4-PowerTSFN | Tape & Reel (TR) | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 650 V | 1.7 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 110 µA @ 650 V | 190pF @ 1V, 1MHz | 6A | - | - | Surface Mount | PG-VSON-4 | -55°C ~ 150°C |
|
|
IDL08G65C5XUMA1DIODE SIL CARBIDE 650V 8A VSON-4 Infineon Technologies |
3,703 | - |
|
数据表 |
CoolSiC™+ | 4-PowerTSFN | Tape & Reel (TR) | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 650 V | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 140 µA @ 650 V | 250pF @ 1V, 1MHz | 8A | - | - | Surface Mount | PG-VSON-4 | -55°C ~ 150°C |
|
|
IDL12G65C5XUMA1DIODE SIL CARB 650V 12A VSON-4 Infineon Technologies |
5,233 | - |
|
数据表 |
CoolSiC™+ | 4-PowerTSFN | Tape & Reel (TR) | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 650 V | 1.7 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 190 µA @ 650 V | 360pF @ 1V, 1MHz | 12A | - | - | Surface Mount | PG-VSON-4 | -55°C ~ 150°C |
|
IDP1301GXUMA1DIODE GEN PURP DSO-19 Infineon Technologies |
5,055 | - |
|
数据表 |
* | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
IDW30E60AFKSA1DIODE GEN PURP 600V 60A TO247-3 Infineon Technologies |
7,578 | - |
|
数据表 |
- | TO-247-3 | Tube | Discontinued at Digi-Key | Standard | 600 V | 2 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 143 ns | 40 µA @ 600 V | - | 60A | - | - | Through Hole | PG-TO247-3 | -40°C ~ 175°C |
|
|
IDC51D120T6MX1SA3DIODE GP 1.2KV 100A WAFER Infineon Technologies |
7,346 | - |
|
数据表 |
- | Die | Bulk | Active | Standard | 1200 V | 2.05 V @ 100 A | Standard Recovery >500ns, > 200mA (Io) | - | 18 µA @ 1200 V | - | 100A | - | - | Surface Mount | Sawn on foil | -40°C ~ 175°C |
