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| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)（最大值） | 电压 - 正向 (Vf)（最大值）@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流（Io） | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IDH08SG60CXKSA2DIODE SIL CARB 600V 8A TO220-2-1 Infineon Technologies |
1,662 | - |
|
数据表 |
CoolSiC™+ | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 600 V | 2.1 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 70 µA @ 600 V | 240pF @ 1V, 1MHz | 8A | - | - | Through Hole | PG-TO220-2-1 | -55°C ~ 175°C |
|
IDK10G120C5XTMA1DIODE SIC 1.2KV 31.9A TO263-1 Infineon Technologies |
835 | - |
|
数据表 |
CoolSiC™+ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | - | 18 µA @ 1200 V | 525pF @ 1V, 1MHz | 31.9A | - | - | Surface Mount | PG-TO263-2-1 | -55°C ~ 175°C |
|
IDW12G65C5XKSA1DIODE SIL CARB 650V 12A TO247-3 Infineon Technologies |
268 | - |
|
数据表 |
CoolSiC™+ | TO-247-3 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 1.7 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 190 µA @ 650 V | 360pF @ 1V, 1MHz | 12A | - | - | Through Hole | PG-TO247-3 | -55°C ~ 175°C |
|
|
IDH12G65C5XKSA2DIODE SIL CARB 650V 12A TO220-1 Infineon Technologies |
850 | - |
|
数据表 |
CoolSiC™+ | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 1.7 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 190 µA @ 650 V | 360pF @ 1V, 1MHz | 12A | - | - | Through Hole | PG-TO220-2-1 | -55°C ~ 175°C |
|
IDD10SG60CXTMA2DIODE SIL CARB 600V 10A TO252-3 Infineon Technologies |
217 | - |
|
数据表 |
CoolSiC™+ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 600 V | 2.1 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 90 µA @ 600 V | 290pF @ 1V, 1MHz | 10A | - | - | Surface Mount | PG-TO252-3 | -55°C ~ 175°C |
|
|
IDH16G65C5XKSA2DIODE SIL CARB 650V 16A TO220-1 Infineon Technologies |
1,984 | - |
|
数据表 |
CoolSiC™+ | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 1.7 V @ 16 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 650 V | 470pF @ 1V, 1MHz | 16A | - | - | Through Hole | PG-TO220-2-1 | -55°C ~ 175°C |
|
|
IDH12SG60CXKSA2DIODE SIL CARB 600V 12A TO220-1 Infineon Technologies |
396 | - |
|
数据表 |
CoolSiC™+ | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 600 V | 2.1 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 600 V | 310pF @ 1V, 1MHz | 12A | - | - | Through Hole | PG-TO220-2-1 | -55°C ~ 175°C |
|
|
IDH16G120C5XKSA1DIODE SIL CARB 1.2KV 16A TO220-1 Infineon Technologies |
243 | - |
|
数据表 |
CoolSiC™+ | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 1.95 V @ 16 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 1200 V | 730pF @ 1V, 1MHz | 16A | - | - | Through Hole | PG-TO220-2-1 | -55°C ~ 175°C |
|
|
IDK16G120C5XTMA1DIODE SIL CARB 1.2KV 40A TO263-1 Infineon Technologies |
437 | - |
|
数据表 |
CoolSiC™+ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | 1.95 V @ 16 A | No Recovery Time > 500mA (Io) | - | 80 µA @ 1200 V | 730pF @ 1V, 1MHz | 40A | - | - | Surface Mount | PG-TO263-2-1 | -55°C ~ 175°C |
|
|
IDW40G65C5BXKSA2DIODE SIL CARB 650V 20A TO247-3 Infineon Technologies |
240 | - |
|
数据表 |
CoolSiC™+ | TO-247-3 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 1.7 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 210 µA @ 650 V | 590pF @ 1V, 1MHz | 20A | - | - | Through Hole | PG-TO247-3 | -55°C ~ 175°C |
