Infineon Technologies|单个二极管 - 页 61

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	技术	电压 - 直流反向 (Vr)（最大值）	电压 - 正向 (Vf)（最大值）@ If	速度	反向恢复时间 (trr)	电流 - 反向漏电 @ Vr	电容 @ Vr, F	电流 - 平均整流（Io）	等级	认证	安装类型	供应商设备封装	工作温度 - 结点
IDP40E65D2XKSA1 DIODE GEN PURP 650V 40A TO220-2 Infineon Technologies	263	-	询价单	数据表	-	TO-220-2	Tube	Active	Standard	650 V	2.3 V @ 40 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	40 µA @ 650 V	-	40A	-	-	Through Hole	TO-220-2	-40°C ~ 175°C
IDH02G120C5XKSA1 DIODE SIL CARB 1.2KV 2A TO220-1 Infineon Technologies	1,781	-	询价单	数据表	CoolSiC™+	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	1.65 V @ 2 A	No Recovery Time > 500mA (Io)	0 ns	18 µA @ 1200 V	182pF @ 1V, 1MHz	2A	-	-	Through Hole	PG-TO220-2-1	175°C (Max)
IDW30E65D1FKSA1 DIODE GP 650V 60A TO247-3-1 Infineon Technologies	259	-	询价单	数据表	-	TO-247-3	Tube	Active	Standard	650 V	1.7 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	115 ns	40 µA @ 650 V	-	60A	-	-	Through Hole	PG-TO247-3-1	-40°C ~ 175°C
IDK02G120C5XTMA1 DIODE SIC 1.2KV 11.8A TO263-1 Infineon Technologies	688	-	询价单	数据表	CoolSiC™+	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	1200 V	1.65 V @ 2 A	No Recovery Time > 500mA (Io)	-	18 µA @ 1200 V	182pF @ 1V, 1MHz	11.8A	-	-	Surface Mount	PG-TO263-2-1	-55°C ~ 175°C
IDW40E65D1FKSA1 DIODE GP 650V 80A TO247-3-1 Infineon Technologies	110	-	询价单	数据表	-	TO-247-3	Tube	Active	Standard	650 V	1.7 V @ 40 A	Fast Recovery =< 500ns, > 200mA (Io)	129 ns	40 µA @ 650 V	-	80A	-	-	Through Hole	PG-TO247-3-1	-40°C ~ 175°C
IDH06G65C5XKSA2 DIODE SIL CARB 650V 6A TO220-2-1 Infineon Technologies	1,287	-	询价单	数据表	CoolSiC™+	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	1.7 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	110 µA @ 650 V	190pF @ 1V, 1MHz	6A	-	-	Through Hole	PG-TO220-2-1	-55°C ~ 175°C
IDW40E65D2FKSA1 DIODE GP 650V 80A TO247-3-1 Infineon Technologies	2,289	-	询价单	数据表	-	TO-247-3	Tube	Active	Standard	650 V	2.3 V @ 40 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	40 µA @ 650 V	-	80A	-	-	Through Hole	PG-TO247-3-1	-40°C ~ 175°C
IDW75E60FKSA1 DIODE GP 600V 120A TO247-3-1 Infineon Technologies	454	-	询价单	数据表	-	TO-247-3	Tube	Active	Standard	600 V	2 V @ 75 A	Fast Recovery =< 500ns, > 200mA (Io)	121 ns	40 µA @ 600 V	-	120A	-	-	Through Hole	PG-TO247-3-1	-55°C ~ 175°C
IDDD08G65C6XTMA1 DIODE SIL CARB 650V 24A HDSOP-10 Infineon Technologies	1,875	-	询价单	数据表	CoolSiC™+	10-PowerSOP Module	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	-	No Recovery Time > 500mA (Io)	0 ns	27 µA @ 420 V	401pF @ 1V, 1MHz	24A	-	-	Surface Mount	PG-HDSOP-10-1	-55°C ~ 175°C
IDH08G120C5XKSA1 DIODE SIL CARB 1.2KV TO220-1 Infineon Technologies	285	-	询价单	数据表	CoolSiC™+	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	1.95 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 1200 V	365pF @ 1V, 1MHz	22.8A	-	-	Through Hole	PG-TO220-2-1	-55°C ~ 175°C

共 685 条记录«上一页 1... 57 58 59 606162 63 64...69 下一页»