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| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)（最大值） | 电压 - 正向 (Vf)（最大值）@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流（Io） | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SIDC06D120H8X1SA2DIODE GP 1.2KV 7.5A WAFER Infineon Technologies |
3,294 | - |
|
数据表 |
- | Die | Bulk | Active | Standard | 1200 V | 1.97 V @ 7.5 A | Standard Recovery >500ns, > 200mA (Io) | - | 27 µA @ 1200 V | - | 7.5A | - | - | Surface Mount | Sawn on foil | -40°C ~ 175°C |
|
|
SIDC08D120H8X1SA1DIODE GEN PURP 1.2KV 150A WAFER Infineon Technologies |
8,432 | - |
|
数据表 |
- | - | Bulk | Active | Standard | 1200 V | 1.41 V @ 45 A | Standard Recovery >500ns, > 200mA (Io) | - | 27 µA @ 1200 V | - | 150A | - | - | - | - | -40°C ~ 175°C |
|
|
SIDC81D120H8X1SA3DIODE GEN PURP 1.2KV 150A WAFER Infineon Technologies |
6,278 | - |
|
数据表 |
- | - | Bulk | Active | Standard | 1200 V | 2.15 V @ 150 A | Standard Recovery >500ns, > 200mA (Io) | - | 27 µA @ 1200 V | - | 150A | - | - | - | - | -40°C ~ 175°C |
|
|
IRD3CH101DB6DIODE GEN PURP 1.2KV 200A DIE Infineon Technologies |
4,094 | - |
|
数据表 |
- | Die | Bulk | Obsolete | Standard | 1200 V | 2.7 V @ 200 A | Fast Recovery =< 500ns, > 200mA (Io) | 360 ns | 100 µA @ 1200 V | - | 200A | - | - | Surface Mount | Die | -40°C ~ 175°C |
|
|
IRD3CH11DF6DIODE CHIP EMITTER CONTROLLED Infineon Technologies |
7,637 | - |
|
数据表 |
- | - | Bulk | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
IRD3CH16DF6DIODE CHIP EMITTER CONTROLLED Infineon Technologies |
7,905 | - |
|
数据表 |
- | - | Bulk | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
IRD3CH24DF6DIODE CHIP EMITTER CONTROLLED Infineon Technologies |
6,613 | - |
|
数据表 |
- | - | Bulk | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
IRD3CH31DF6DIODE CHIP EMITTER CONTROLLED Infineon Technologies |
7,352 | - |
|
数据表 |
- | - | Bulk | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
IRD3CH53DB6DIODE GEN PURP 1.2KV 100A DIE Infineon Technologies |
6,919 | - |
|
数据表 |
- | Die | Bulk | Obsolete | Standard | 1200 V | 2.7 V @ 100 A | Fast Recovery =< 500ns, > 200mA (Io) | 270 ns | 20 µA @ 1200 V | - | 100A | - | - | Surface Mount | Die | -40°C ~ 150°C |
|
|
IRD3CH53DF6DIODE CHIP EMITTER CONTROLLED Infineon Technologies |
2,541 | - |
|
数据表 |
- | - | Bulk | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - |
