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| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)（最大值） | 电压 - 正向 (Vf)（最大值）@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流（Io） | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IRD3CH5DB6DIODE GEN PURP 1.2KV 5A DIE Infineon Technologies |
5,947 | - |
|
数据表 |
- | Die | Bulk | Obsolete | Standard | 1200 V | 2.7 V @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | 96 ns | 100 nA @ 1200 V | - | 5A | - | - | Surface Mount | Die | -40°C ~ 150°C |
|
|
IRD3CH82DF6DIODE CHIP EMITTER CONTROLLED Infineon Technologies |
4,112 | - |
|
数据表 |
- | - | Bulk | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
IRD3CH9DB6DIODE GEN PURP 1.2KV 10A DIE Infineon Technologies |
8,722 | - |
|
数据表 |
- | Die | Bulk | Obsolete | Standard | 1200 V | 2.7 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | 154 ns | 200 nA @ 1200 V | - | 10A | - | - | Surface Mount | Die | -40°C ~ 150°C |
|
|
IRD3CH9DF6DIODE CHIP EMITTER CONTROLLED Infineon Technologies |
5,274 | - |
|
数据表 |
- | - | Bulk | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
BAW78DH6327XTSA1DIODE GEN PURP 400V 1A SOT89 Infineon Technologies |
3,348 | - |
|
数据表 |
- | TO-243AA | Tape & Reel (TR) | Last Time Buy | Standard | 400 V | 1.6 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | 1 µs | 1 µA @ 400 V | 10pF @ 0V, 1MHz | 1A | Automotive | AEC-Q101 | Surface Mount | PG-SOT89 | 150°C (Max) |
|
|
IDP2302XUMA1AC/DC DIGITAL PLATFORM Infineon Technologies |
9,163 | - |
|
数据表 |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
IDB15E60ATMA1DIODE GP 600V 29.2A TO263-3-2 Infineon Technologies |
3,500 | - |
|
数据表 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | Standard | 600 V | 2 V @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | 87 ns | 50 µA @ 600 V | - | 29.2A | - | - | Surface Mount | PG-TO263-3-2 | -40°C ~ 175°C |
|
|
IDB10S60CATMA2DIODE SIL CARB 600V 10A TO263-3 Infineon Technologies |
4,014 | - |
|
数据表 |
CoolSiC™+ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 600 V | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 140 µA @ 600 V | 480pF @ 1V, 1MHz | 10A | - | - | Surface Mount | PG-TO263-3-2 | -55°C ~ 175°C |
|
IDP20E65D2XKSA1DIODE GP 650V 40A TO220-2-1 Infineon Technologies |
460 | - |
|
数据表 |
- | TO-220-2 | Tube | Active | Standard | 650 V | 2.2 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | 32 ns | 40 µA @ 650 V | - | 40A | - | - | Through Hole | PG-TO220-2-1 | -40°C ~ 175°C |
|
|
IDH10G65C5ZXKSA2DIODE SCHOTTKY 650V 10A TO220-2 Infineon Technologies |
8,552 | - |
|
数据表 |
* | - | Tube | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - |
