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| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)（最大值） | 电压 - 正向 (Vf)（最大值）@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流（Io） | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IDH10G65C5ZXKSA1DIODE SIL CARB 650V 10A TO220-2 Infineon Technologies |
6,500 | - |
|
数据表 |
CoolSiC™+ | TO-220-2 | Tube | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 650 V | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 180 µA @ 650 V | 300pF @ 1V, 1MHz | 10A | - | - | Through Hole | PG-TO220-2 | -55°C ~ 175°C |
|
IDT04S60CHKSA1DIODE SCHOTTKY 600V TO220-2 Infineon Technologies |
4,843 | - |
|
数据表 |
- | - | Tube | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
IDK04G65C5XTMA2DIODE SIL CARB 650V 4A TO263-2 Infineon Technologies |
803 | - |
|
数据表 |
CoolSiC™+ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 1.8 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 670 µA @ 650 V | 130pF @ 1V, 1MHz | 4A | - | - | Surface Mount | PG-TO263-2 | -55°C ~ 175°C |
|
|
IDT16S60CHKSA1DIODE SCHOTTKY 600V TO220-2 Infineon Technologies |
2,715 | - |
|
数据表 |
- | - | Tube | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
IDP18E120XKSA1DIODE GP 1.2KV 31A TO220-2-2 Infineon Technologies |
423 | - |
|
数据表 |
- | TO-220-2 | Tube | Active | Standard | 1200 V | 2.15 V @ 18 A | Fast Recovery =< 500ns, > 200mA (Io) | 195 ns | 100 µA @ 1200 V | - | 31A | - | - | Through Hole | PG-TO220-2-2 | -55°C ~ 150°C |
|
IDD09SG60CXTMA2DIODE SIL CARB 600V 9A TO252-3 Infineon Technologies |
4,186 | - |
|
数据表 |
CoolSiC™+ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 600 V | 2.1 V @ 9 A | No Recovery Time > 500mA (Io) | 0 ns | 80 µA @ 600 V | 280pF @ 1V, 1MHz | 9A | - | - | Surface Mount | PG-TO252-3 | -55°C ~ 175°C |
|
|
IDH03SG60CXKSA2DIODE SIL CARB 600V 3A TO220-2-1 Infineon Technologies |
2,374 | - |
|
数据表 |
CoolSiC™+ | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 600 V | 2.3 V @ 3 A | No Recovery Time > 500mA (Io) | 0 ns | 15 µA @ 600 V | 60pF @ 1V, 1MHz | 3A | - | - | Through Hole | PG-TO220-2-1 | -55°C ~ 175°C |
|
|
IDH05SG60CXKSA2DIODE SIL CARB 600V 5A TO220-2-1 Infineon Technologies |
5,315 | - |
|
数据表 |
CoolSiC™+ | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 600 V | 2.3 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 600 V | 110pF @ 1V, 1MHz | 5A | - | - | Through Hole | PG-TO220-2-1 | -55°C ~ 175°C |
|
|
IDH09SG60CXKSA2DIODE SIL CARB 600V 9A TO220-2-1 Infineon Technologies |
9,451 | - |
|
数据表 |
CoolSiC™+ | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 600 V | 2.1 V @ 9 A | No Recovery Time > 500mA (Io) | 0 ns | 80 µA @ 600 V | 280pF @ 1V, 1MHz | 9A | - | - | Through Hole | PG-TO220-2-1 | -55°C ~ 175°C |
|
|
IDP08E65D2XKSA1DIODE GEN PURP 650V 8A TO220-2 Infineon Technologies |
2 | - |
|
数据表 |
- | TO-220-2 | Bulk | Active | Standard | 650 V | 2.3 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 40 ns | 40 µA @ 650 V | - | 8A | - | - | Through Hole | TO-220-2 | -40°C ~ 175°C |
