Infineon Technologies|单个二极管 - 页 60

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	技术	电压 - 直流反向 (Vr)（最大值）	电压 - 正向 (Vf)（最大值）@ If	速度	反向恢复时间 (trr)	电流 - 反向漏电 @ Vr	电容 @ Vr, F	电流 - 平均整流（Io）	等级	认证	安装类型	供应商设备封装	工作温度 - 结点
IDH09G65C5XKSA1 DIODE SIL CARB 650V 9A TO220-2-2 Infineon Technologies	9,643	-	询价单	数据表	CoolSiC™+	TO-220-2	Tube	Discontinued at Digi-Key	SiC (Silicon Carbide) Schottky	650 V	1.7 V @ 9 A	No Recovery Time > 500mA (Io)	0 ns	310 µA @ 650 V	270pF @ 1V, 1MHz	9A	-	-	Through Hole	PG-TO220-2-2	-55°C ~ 175°C
IDH16G65C5XKSA1 DIODE SIL CARB 650V 16A TO220-2 Infineon Technologies	8,688	-	询价单	数据表	CoolSiC™+	TO-220-2	Tube	Discontinued at Digi-Key	SiC (Silicon Carbide) Schottky	650 V	1.7 V @ 16 A	No Recovery Time > 500mA (Io)	0 ns	550 µA @ 650 V	470pF @ 1V, 1MHz	16A	-	-	Through Hole	PG-TO220-2-2	-55°C ~ 175°C
BAS 16 B5003 DIODE GEN PURP 80V 250MA SOT23 Infineon Technologies	3,577	-	询价单	数据表	-	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Obsolete	Standard	80 V	1.25 V @ 150 mA	Fast Recovery =< 500ns, > 200mA (Io)	4 ns	1 µA @ 75 V	2pF @ 0V, 1MHz	250mA	-	-	Surface Mount	PG-SOT23	150°C (Max)
IDV15E65D2XKSA1 DIODE GEN PURP 650V 15A TO220-2 Infineon Technologies	457	-	询价单	数据表	-	TO-220-2	Tube	Active	Standard	650 V	2.2 V @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	47 ns	40 µA @ 650 V	-	15A	-	-	Through Hole	TO-220-2	-40°C ~ 175°C
BAS16WE6327HTSA1 DIODE GEN PURP 80V 250MA SOT323 Infineon Technologies	8,219	-	询价单	数据表	-	SC-70, SOT-323	Tape & Reel (TR)	Obsolete	Standard	80 V	1.25 V @ 150 mA	Fast Recovery =< 500ns, > 200mA (Io)	4 ns	1 µA @ 75 V	2pF @ 0V, 1MHz	250mA	-	-	Surface Mount	PG-SOT323	150°C (Max)
IDV20E65D1XKSA1 DIODE GP 650V 28A TO220-2FP Infineon Technologies	483	-	询价单	数据表	-	TO-220-2 Full Pack	Tube	Active	Standard	650 V	1.7 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	42 ns	40 µA @ 650 V	-	28A	-	-	Through Hole	PG-TO220-2 Full Pack	-40°C ~ 175°C
IDP30E65D2XKSA1 DIODE GP 650V 60A TO220-2-1 Infineon Technologies	534	-	询价单	数据表	-	TO-220-2	Tube	Active	Standard	650 V	2.2 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	42 ns	40 µA @ 650 V	-	60A	-	-	Through Hole	PG-TO220-2-1	-40°C ~ 175°C
IDP15E65D2XKSA1 DIODE GEN PURP 650V 15A TO220 Infineon Technologies	147	-	询价单	数据表	-	TO-220-2	Tube	Active	Standard	650 V	2.3 V @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	47 ns	40 µA @ 650 V	-	15A	-	-	Through Hole	TO-220	-40°C ~ 175°C
IDP30E65D1XKSA1 DIODE GP 650V 60A TO220-2-1 Infineon Technologies	645	-	询价单	数据表	-	TO-220-2	Tube	Active	Standard	650 V	1.7 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	64 ns	40 µA @ 650 V	-	60A	-	-	Through Hole	PG-TO220-2-1	-40°C ~ 175°C
IDV30E65D2XKSA1 DIODE GP 650V 30A TO220-2FP Infineon Technologies	508	-	询价单	数据表	-	TO-220-2 Full Pack	Tube	Active	Standard	650 V	2.2 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	42 ns	40 µA @ 650 V	-	30A	-	-	Through Hole	PG-TO220-2 Full Pack	-40°C ~ 175°C

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