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| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)（最大值） | 电压 - 正向 (Vf)（最大值）@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流（Io） | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IDH08G65C5XKSA1DIODE SIL CARB 650V 8A TO220-2-2 Infineon Technologies |
4,174 | - |
|
数据表 |
CoolSiC™+ | TO-220-2 | Tube | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 650 V | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 280 µA @ 650 V | 250pF @ 1V, 1MHz | 8A | - | - | Through Hole | PG-TO220-2-2 | -55°C ~ 175°C |
|
IDW40G65C5FKSA1DIODE SIL CARB 650V 40A TO247-3 Infineon Technologies |
3,629 | - |
|
数据表 |
CoolSiC™+ | TO-247-3 | Bulk | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 650 V | 1.7 V @ 40 A | No Recovery Time > 500mA (Io) | 0 ns | 1.4 mA @ 650 V | 1140pF @ 1V, 1MHz | 40A | - | - | Through Hole | PG-TO247-3-1 | -55°C ~ 175°C |
|
|
IDH20G65C5XKSA1DIODE SIL CARB 650V 20A TO220-2 Infineon Technologies |
3,626 | - |
|
数据表 |
CoolSiC™+ | TO-220-2 | Tube | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 650 V | 1.7 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 700 µA @ 650 V | 590pF @ 1V, 1MHz | 20A | - | - | Through Hole | PG-TO220-2-2 | -55°C ~ 175°C |
|
IDW10G65C5FKSA1DIODE SIL CARB 650V 10A TO247-3 Infineon Technologies |
5,244 | - |
|
数据表 |
CoolSiC™+ | TO-247-3 | Tube | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 650 V | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 400 µA @ 650 V | 300pF @ 1V, 1MHz | 10A | - | - | Through Hole | PG-TO247-3-41 | -55°C ~ 175°C |
|
|
IDH03G65C5XKSA1DIODE SIL CARB 650V 3A TO220-2-2 Infineon Technologies |
5,340 | - |
|
数据表 |
CoolSiC™+ | TO-220-2 | Tube | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 650 V | 1.7 V @ 3 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 600 V | 100pF @ 1V, 1MHz | 3A | - | - | Through Hole | PG-TO220-2-2 | -55°C ~ 175°C |
|
|
IDH06G65C5XKSA1DIODE SIL CARB 650V 6A TO220-2-2 Infineon Technologies |
8,969 | - |
|
数据表 |
CoolSiC™+ | TO-220-2 | Tube | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 650 V | 1.7 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 210 µA @ 650 V | 190pF @ 1V, 1MHz | 6A | - | - | Through Hole | PG-TO220-2-2 | -55°C ~ 175°C |
|
|
IDH04G65C5XKSA1DIODE SIL CARB 650V 4A TO220-2-2 Infineon Technologies |
2,826 | - |
|
数据表 |
CoolSiC™+ | TO-220-2 | Tube | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 650 V | 1.7 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 140 µA @ 650 V | 130pF @ 1V, 1MHz | 4A | - | - | Through Hole | PG-TO220-2-2 | -55°C ~ 175°C |
|
|
IDW12G65C5FKSA1DIODE SIL CARB 650V 12A TO247-3 Infineon Technologies |
9,222 | - |
|
数据表 |
CoolSiC™+ | TO-247-3 | Tube | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 650 V | 1.7 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 500 µA @ 650 V | 360pF @ 1V, 1MHz | 12A | - | - | Through Hole | PG-TO247-3-41 | -55°C ~ 175°C |
|
|
IDW16G65C5FKSA1DIODE SIL CARB 650V 16A TO247-3 Infineon Technologies |
3,635 | - |
|
数据表 |
CoolSiC™+ | TO-247-3 | Tube | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 650 V | 1.7 V @ 16 A | No Recovery Time > 500mA (Io) | 0 ns | 600 µA @ 650 V | 470pF @ 1V, 1MHz | 16A | - | - | Through Hole | PG-TO247-3-1 | -55°C ~ 175°C |
|
|
IDW20G65C5FKSA1DIODE SIL CARB 650V 20A TO247-3 Infineon Technologies |
4,510 | - |
|
数据表 |
CoolSiC™+ | TO-247-3 | Tube | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 650 V | 1.7 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 700 µA @ 650 V | 590pF @ 1V, 1MHz | 20A | - | - | Through Hole | PG-TO247-3-1 | -55°C ~ 175°C |
