| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)(最大值) | 电压 - 正向 (Vf)(最大值)@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流(Io) | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IDP06E60DIODE GEN PURP 600V 14.7A TO220 Infineon Technologies |
5,145 | - |
|
数据表 |
- | TO-220-2 | Tube | Obsolete | Standard | 600 V | 2 V @ 6 A | Fast Recovery =< 500ns, > 200mA (Io) | 70 ns | 50 µA @ 600 V | - | 14.7A | - | - | Through Hole | PG-TO220-2-2 | -55°C ~ 175°C |
|
IDP09E120DIODE GEN PURP 1.2KV 23A TO220-2 Infineon Technologies |
6,297 | - |
|
数据表 |
- | TO-220-2 | Tube | Obsolete | Standard | 1200 V | 2.15 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 140 ns | 100 µA @ 1200 V | - | 23A | - | - | Through Hole | PG-TO220-2-2 | -55°C ~ 150°C |
|
IDP23E60DIODE GP 600V 41A TO220-2-2 Infineon Technologies |
6,051 | - |
|
数据表 |
- | TO-220-2 | Tube | Obsolete | Standard | 600 V | 2 V @ 23 A | Fast Recovery =< 500ns, > 200mA (Io) | 120 ns | 50 µA @ 600 V | - | 41A | - | - | Through Hole | PG-TO220-2-2 | -55°C ~ 175°C |
|
IDP30E60XKSA1DIODE GEN PURP 600V 52.3A TO220 Infineon Technologies |
9,362 | - |
|
数据表 |
- | TO-220-2 | Tube | Obsolete | Standard | 600 V | 2 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 126 ns | 50 µA @ 600 V | - | 52.3A | - | - | Through Hole | PG-TO220-2-2 | -55°C ~ 175°C |
|
IDP45E60XKSA1DIODE GP 600V 71A TO220-2-2 Infineon Technologies |
2,660 | - |
|
数据表 |
- | TO-220-2 | Tube | Obsolete | Standard | 600 V | 2 V @ 45 A | Fast Recovery =< 500ns, > 200mA (Io) | 140 ns | 50 µA @ 600 V | - | 71A | - | - | Through Hole | PG-TO220-2-2 | -55°C ~ 175°C |
|
IDB12E120ATMA1DIODE GP 1.2KV 28A TO263-3-2 Infineon Technologies |
2,052 | - |
|
数据表 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | Standard | 1200 V | 2.15 V @ 12 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 100 µA @ 1200 V | - | 28A | - | - | Surface Mount | PG-TO263-3-2 | -55°C ~ 150°C |
|
IDB30E60ATMA1DIODE GP 600V 52.3A TO263-3-2 Infineon Technologies |
5,677 | - |
|
数据表 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | Standard | 600 V | 2 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 126 ns | 50 µA @ 600 V | - | 52.3A | - | - | Surface Mount | PG-TO263-3-2 | -40°C ~ 175°C |
|
IDV30E60CDIODE GP 600V 21A TO220-2FP Infineon Technologies |
4,229 | - |
|
数据表 |
- | TO-220-2 Full Pack | Tube | Obsolete | Standard | 600 V | 2.05 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 130 ns | 40 µA @ 600 V | - | 21A | - | - | Through Hole | PG-TO220-2 Full Pack | -55°C ~ 175°C |
|
IDH10G65C5XKSA1DIODE SIL CARB 650V 10A TO220-2 Infineon Technologies |
7,297 | - |
|
数据表 |
CoolSiC™+ | TO-220-2 | Tube | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 650 V | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 340 µA @ 650 V | 300pF @ 1V, 1MHz | 10A | - | - | Through Hole | PG-TO220-2-2 | -55°C ~ 175°C |
|
IDH05G65C5XKSA1DIODE SIL CARB 650V 5A TO220-2-2 Infineon Technologies |
2,413 | - |
|
数据表 |
CoolSiC™+ | TO-220-2 | Tube | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 650 V | 1.7 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 170 µA @ 650 V | 160pF @ 1V, 1MHz | 5A | - | - | Through Hole | PG-TO220-2-2 | -55°C ~ 175°C |