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| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)（最大值） | 电压 - 正向 (Vf)（最大值）@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流（Io） | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IDYH10G200C5XKSA1SIC DISCRETE Infineon Technologies |
47 | - |
|
数据表 |
CoolSiC™ | TO-247-4 Variant | Tube | Active | SiC (Silicon Carbide) Schottky | 2000 V | 1.75 V @ 10 A | - | - | 150 µA @ 2000 V | 1140pF @ 1V, 100kHz | 35A | - | - | Through Hole | PG-TO247-U04 | -55°C ~ 175°C |
|
|
IDYH25G200C5XKSA1SIC DISCRETE Infineon Technologies |
56 | - |
|
数据表 |
CoolSiC™ | TO-247-4 Variant | Tube | Active | SiC (Silicon Carbide) Schottky | 2000 V | 1.75 V @ 25 A | - | - | 375 µA @ 2000 V | 1140pF @ 1V, 100kHz | 77A | - | - | Through Hole | PG-TO247-U04 | -55°C ~ 175°C |
|
|
IDYH40G200C5XKSA1SIC DISCRETE Infineon Technologies |
66 | - |
|
数据表 |
CoolSiC™ | TO-247-4 Variant | Tube | Active | SiC (Silicon Carbide) Schottky | 2000 V | 1.75 V @ 40 A | - | - | 600 µA @ 2000 V | 4550pF @ 1V, 100kHz | 114A | - | - | Through Hole | PG-TO247-U04 | -55°C ~ 175°C |
|
|
ND89N12KHPSA1DIODE GEN PURP 1.2KV 89A PB20-1 Infineon Technologies |
16 | - |
|
数据表 |
- | Module | Tray | Active | Standard | 1200 V | - | Standard Recovery >500ns, > 200mA (Io) | - | 20 mA @ 1200 V | - | 89A | - | - | Chassis Mount | BG-PB20-1 | -40°C ~ 135°C |
|
|
ND89N16KHPSA1DIODE GEN PURP 1.6KV 89A PB20-1 Infineon Technologies |
11 | - |
|
数据表 |
- | Module | Tray | Active | Standard | 1600 V | - | Standard Recovery >500ns, > 200mA (Io) | - | 20 mA @ 1600 V | - | 89A | - | - | Chassis Mount | BG-PB20-1 | -40°C ~ 135°C |
|
D1800N48TVFXPSA1DIODE GEN PURP 4.8KV 1800A Infineon Technologies |
8 | - |
|
数据表 |
- | DO-200AC, K-PUK | Tray | Active | Standard | 4800 V | 1.32 V @ 1500 A | Standard Recovery >500ns, > 200mA (Io) | - | 100 mA @ 4800 V | - | 1800A | - | - | Clamp On | - | -40°C ~ 160°C |
|
DZ1070N22KHPSA3DIODE GP 2.2KV 1100A MODULE Infineon Technologies |
2 | - |
|
数据表 |
- | Module | Tray | Active | Standard | 2200 V | 1.11 V @ 3000 A | Standard Recovery >500ns, > 200mA (Io) | - | 150 mA @ 2200 V | - | 1100A | - | - | Chassis Mount | Module | -40°C ~ 150°C |
|
D4810N22TVFXPSA1DIODE GEN PURP 2.2KV 4810A Infineon Technologies |
3 | - |
|
数据表 |
- | DO-200AE | Tray | Active | Standard | 2200 V | 1.078 V @ 4000 A | Standard Recovery >500ns, > 200mA (Io) | - | 200 mA @ 2200 V | - | 4810A | - | - | Chassis Mount | - | -40°C ~ 150°C |
|
D1131SH65TXPSA1DIODE GEN PURP 6.5KV 1100A Infineon Technologies |
2 | - |
|
数据表 |
- | DO-200AE | Tray | Active | Standard | 6500 V | 5.6 V @ 2500 A | Standard Recovery >500ns, > 200mA (Io) | - | 150 mA @ 6500 V | - | 1100A | - | - | Chassis Mount | - | 0°C ~ 140°C |
|
D1331SH45TXPSA1DIODE GEN PURP 4.5KV 1710A Infineon Technologies |
2 | - |
|
数据表 |
- | DO-200AE | Tray | Active | Standard | 4500 V | 4.2 V @ 2500 A | Standard Recovery >500ns, > 200mA (Io) | - | 150 mA @ 4500 V | - | 1710A | - | - | Chassis Mount | - | 0°C ~ 140°C |
