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| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)（最大值） | 电压 - 正向 (Vf)（最大值）@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流（Io） | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SDT06S60DIODE SIL CARB 600V 6A TO220-2-2 Infineon Technologies |
9,690 | - |
|
数据表 |
CoolSiC™+ | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 600 V | 1.7 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 600 V | 300pF @ 0V, 1MHz | 6A | - | - | Through Hole | PG-TO220-2-2 | -55°C ~ 175°C |
|
IDB10S60CDIODE SIL CARB 600V 10A TO263-3 Infineon Technologies |
3,731 | - |
|
数据表 |
CoolSiC™+ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 600 V | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 140 µA @ 600 V | 480pF @ 1V, 1MHz | 10A | - | - | Surface Mount | PG-TO263-3-2 | -55°C ~ 175°C |
|
SIDC20D60C6DIODE GP 600V 75A WAFER Infineon Technologies |
9,216 | - |
|
数据表 |
- | Die | Bulk | Discontinued at Digi-Key | Standard | 600 V | 1.9 V @ 75 A | Standard Recovery >500ns, > 200mA (Io) | - | 27 µA @ 600 V | - | 75A | - | - | Surface Mount | Sawn on foil | -40°C ~ 175°C |
|
IDD15E60BUMA1DIODE GP 600V 29.2A TO252-3 Infineon Technologies |
14,802 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | Standard | 600 V | 2 V @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | 87 ns | 50 µA @ 600 V | - | 29.2A | - | - | Surface Mount | PG-TO252-3 | -40°C ~ 175°C |
|
IDW24G65C5BXKSA2DIODE SIL CARB 650V 12A TO247-3 Infineon Technologies |
5,005 | - |
|
数据表 |
CoolSiC™+ | TO-247-3 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 1.7 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 190 µA @ 650 V | 360pF @ 1V, 1MHz | 12A | - | - | Through Hole | PG-TO247-3 | -55°C ~ 175°C |
|
IDP23013XUMA1AC/DC DIGITAL PLATFORM Infineon Technologies |
287,898 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
IDH09G65C5XKSA2DIODE SIL CARB 650V 9A TO220-2-1 Infineon Technologies |
2,985 | - |
|
数据表 |
CoolSiC™+ | TO-220-2 | Bulk | Active | SiC (Silicon Carbide) Schottky | 650 V | 1.7 V @ 9 A | No Recovery Time > 500mA (Io) | 0 ns | 160 µA @ 650 V | 270pF @ 1V, 1MHz | 9A | - | - | Through Hole | PG-TO220-2-1 | -55°C ~ 175°C |
|
|
SIDC26D60C6DIODE GP 600V 100A WAFER Infineon Technologies |
8,904 | - |
|
数据表 |
- | Die | Bulk | Discontinued at Digi-Key | Standard | 600 V | 1.9 V @ 100 A | Standard Recovery >500ns, > 200mA (Io) | - | 27 µA @ 600 V | - | 100A | - | - | Surface Mount | Sawn on foil | -40°C ~ 175°C |
|
|
IDH16S60CAKSA1DIODE SIL CARB 600V 16A TO220-2 Infineon Technologies |
12,385 | - |
|
数据表 |
CoolSiC™+ | TO-220-2 | Bulk | Active | SiC (Silicon Carbide) Schottky | 600 V | 1.7 V @ 16 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 600 V | 650pF @ 1V, 1MHz | 16A | - | - | Through Hole | PG-TO220-2-2 | -55°C ~ 175°C |
|
IDW40G65C5XKSA1DIODE SIL CARB 650V 40A TO247-3 Infineon Technologies |
70 | - |
|
数据表 |
CoolSiC™+ | TO-247-3 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 1.7 V @ 40 A | No Recovery Time > 500mA (Io) | 0 ns | 220 µA @ 650 V | 1140pF @ 1V, 1MHz | 40A | - | - | Through Hole | PG-TO247-3 | -55°C ~ 175°C |
