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| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)（最大值） | 电压 - 正向 (Vf)（最大值）@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流（Io） | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IDC40D120T6MX1SA4DIODE GP 1.2KV 75A WAFER Infineon Technologies |
9,611 | - |
|
数据表 |
- | Die | Bulk | Obsolete | Standard | 1200 V | 2.05 V @ 75 A | Standard Recovery >500ns, > 200mA (Io) | - | 14 µA @ 1200 V | - | 75A | - | - | Surface Mount | Sawn on foil | -40°C ~ 175°C |
|
IDH06SG60CXKSA2DIODE SIL CARB 600V 6A TO220-2-1 Infineon Technologies |
37 | - |
|
数据表 |
CoolSiC™+ | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 600 V | 2.3 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 600 V | 130pF @ 1V, 1MHz | 6A | - | - | Through Hole | PG-TO220-2-1 | -55°C ~ 175°C |
|
|
SIDC42D120H8X1SA3DIODE GP 1.2KV 75A WAFER Infineon Technologies |
4,828 | - |
|
数据表 |
- | Die | Bulk | Discontinued at Digi-Key | Standard | 1200 V | 1.97 V @ 50 A | Standard Recovery >500ns, > 200mA (Io) | - | 27 µA @ 1200 V | - | 75A | - | - | Surface Mount | Sawn on foil | -40°C ~ 175°C |
|
AIDW40S65C5XKSA1DIODE SIL CARB 650V 40A TO247-3 Infineon Technologies |
3,227 | - |
|
数据表 |
CoolSiC™ | TO-247-3 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 1.7 V @ 40 A | No Recovery Time > 500mA (Io) | 0 ns | 120 µA @ 650 V | 1138pF @ 1V, 1MHz | 40A | Automotive | AEC-Q100/101 | Through Hole | PG-TO247-3-41 | -40°C ~ 175°C |
|
46DN06B02ELEMXPSA1DIODE GP 600V 10450A D-ELEM-1 Infineon Technologies |
5 | - |
|
数据表 |
- | DO-200AC, K-PUK | Bulk | Active | Standard | 600 V | 980 mV @ 6000 A | Standard Recovery >500ns, > 200mA (Io) | - | 40 mA @ 600 V | - | 10450A | - | - | Clamp On | BG-D-ELEM-1 | 180°C (Max) |
|
|
SIDC24D30SIC3DIODE SIL CARB 300V 10A WAFER Infineon Technologies |
8,127 | - |
|
数据表 |
- | Die | Bulk | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 300 V | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 300 V | 600pF @ 1V, 1MHz | 10A | - | - | Surface Mount | Sawn on foil | -55°C ~ 175°C |
|
|
SDT12S60DIODE SIL CARB 600V 12A TO220-2 Infineon Technologies |
9,923 | - |
|
数据表 |
CoolSiC™+ | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 600 V | 1.7 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 400 µA @ 600 V | 450pF @ 1V, 1MHz | 12A | - | - | Through Hole | PG-TO220-2-2 | -55°C ~ 175°C |
|
|
SIDC50D60C6X1SA1DIODE GP 600V 200A WAFER Infineon Technologies |
5,707 | - |
|
数据表 |
- | Die | Bulk | Discontinued at Digi-Key | Standard | 600 V | 1.9 V @ 200 A | Standard Recovery >500ns, > 200mA (Io) | - | 27 µA @ 600 V | - | 200A | - | - | Surface Mount | Sawn on foil | -40°C ~ 175°C |
|
|
SIDC53D120H8X1SA1DIODE GP 1.2KV 100A WAFER Infineon Technologies |
5,436 | - |
|
数据表 |
- | Die | Bulk | Discontinued at Digi-Key | Standard | 1200 V | 1.97 V @ 100 A | Standard Recovery >500ns, > 200mA (Io) | - | 27 µA @ 1200 V | - | 100A | - | - | Surface Mount | Sawn on foil | -40°C ~ 175°C |
|
|
SIDC46D170HX1SA2DIODE GP 1.7KV 75A WAFER Infineon Technologies |
7,920 | - |
|
数据表 |
- | Die | Bulk | Discontinued at Digi-Key | Standard | 1700 V | 1.8 V @ 75 A | Standard Recovery >500ns, > 200mA (Io) | - | 27 µA @ 1700 V | - | 75A | - | - | Surface Mount | Sawn on foil | -55°C ~ 150°C |
