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单个二极管
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)（最大值） | 电压 - 正向 (Vf)（最大值）@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流（Io） | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
DZ600N12KHPSA1DIODE GEN PURP 1.2KV 735A MODULE Infineon Technologies |
12 | - |
|
数据表 |
- | Module | Tray | Active | Standard | 1200 V | 1.4 V @ 2200 A | Standard Recovery >500ns, > 200mA (Io) | - | 40 mA @ 1200 V | - | 735A | - | - | Chassis Mount | Module | -40°C ~ 150°C |
|
DZ600N16KHPSA1DIODE GEN PURP 1.6KV 735A MODULE Infineon Technologies |
15 | - |
|
数据表 |
- | Module | Tray | Active | Standard | 1600 V | 1.4 V @ 2200 A | Standard Recovery >500ns, > 200mA (Io) | - | 40 mA @ 1600 V | - | 735A | - | - | Chassis Mount | Module | -40°C ~ 150°C |
|
DZ1070N18KHPSA3DIODE GP 1.8KV 1100A MODULE Infineon Technologies |
2 | - |
|
数据表 |
- | Module | Tray | Active | Standard | 1800 V | 1.11 V @ 3000 A | Standard Recovery >500ns, > 200mA (Io) | - | 150 mA @ 1800 V | - | 1100A | - | - | Chassis Mount | Module | -40°C ~ 150°C |
|
|
IDC28D120T6MX1SA2DIODE GP 1.2KV 50A WAFER Infineon Technologies |
8,894 | - |
|
数据表 |
- | Die | Bulk | Obsolete | Standard | 1200 V | 2.05 V @ 50 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 1200 V | - | 50A | - | - | Surface Mount | Sawn on foil | -40°C ~ 175°C |
|
IDP30E120XKSA1DIODE GP 1.2KV 50A TO220-2-2 Infineon Technologies |
62 | - |
|
数据表 |
- | TO-220-2 | Tube | Active | Standard | 1200 V | 2.15 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 243 ns | 100 µA @ 1200 V | - | 50A | - | - | Through Hole | PG-TO220-2-2 | -55°C ~ 150°C |
|
|
IDH08G65C6XKSA1DIODE SIL CARB 650V 20A TO220-2 Infineon Technologies |
36 | - |
|
数据表 |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 1.35 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 27 µA @ 420 V | 401pF @ 1V, 1MHz | 20A | - | - | Through Hole | PG-TO220-2 | -55°C ~ 175°C |
|
|
IDH12G65C6XKSA1DIODE SIL CARB 650V 27A TO220-2 Infineon Technologies |
74 | - |
|
数据表 |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 1.35 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 420 V | 594pF @ 1V, 1MHz | 27A | - | - | Through Hole | PG-TO220-2 | -55°C ~ 175°C |
|
|
SIDC30D60E6X1SA1DIODE GP 600V 75A WAFER Infineon Technologies |
7,838 | - |
|
数据表 |
- | Die | Bulk | Obsolete | Standard | 600 V | 1.25 V @ 75 A | Standard Recovery >500ns, > 200mA (Io) | - | 27 µA @ 600 V | - | 75A | - | - | Surface Mount | Sawn on foil | -55°C ~ 150°C |
|
D970N06TXPSA1DIODE GEN PURP 600V 970A Infineon Technologies |
2 | - |
|
数据表 |
- | DO-200AA, A-PUK | Tray | Active | Standard | 600 V | 970 mV @ 750 A | Standard Recovery >500ns, > 200mA (Io) | - | 20 mA @ 600 V | - | 970A | - | - | Clamp On | - | -40°C ~ 180°C |
|
|
D950N18TXPSA1DIODE GEN PURP 1.8KV 950A Infineon Technologies |
18 | - |
|
数据表 |
- | DO-200AA, A-PUK | Bulk | Active | Standard | 1800 V | 1.12 V @ 650 A | Standard Recovery >500ns, > 200mA (Io) | - | 40 mA @ 1800 V | - | 950A | - | - | Clamp On | - | -40°C ~ 180°C |
