Infineon Technologies|单个二极管 - 页 22

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	技术	电压 - 直流反向 (Vr)（最大值）	电压 - 正向 (Vf)（最大值）@ If	速度	反向恢复时间 (trr)	电流 - 反向漏电 @ Vr	电容 @ Vr, F	电流 - 平均整流（Io）	等级	认证	安装类型	供应商设备封装	工作温度 - 结点
BAS40E6433HTMA1 DIODE SCHOTTKY 40V 120MA SOT23 Infineon Technologies	72	-	询价单	数据表	-	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Active	Schottky	40 V	1 V @ 40 mA	Small Signal =< 200mA (Io), Any Speed	100 ps	1 µA @ 30 V	5pF @ 0V, 1MHz	120mA	-	-	Surface Mount	PG-SOT23	-55°C ~ 150°C
SIDC110D170HX1SA2 DIODE GP 1.7KV 200A WAFER Infineon Technologies	5,521	-	询价单	数据表	-	Die	Bulk	Discontinued at Digi-Key	Standard	1700 V	1.8 V @ 200 A	Standard Recovery >500ns, > 200mA (Io)	-	27 µA @ 1700 V	-	200A	-	-	Surface Mount	Sawn on foil	-55°C ~ 150°C
GLPB3460G1K1457XPSA1 THYR / DIODE MODULE DK Infineon Technologies	9,742	-	询价单	数据表	-	-	Tray	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
BAS7002VH6327XTSA1 DIODE SCHOTTKY 70V 70MA SC79-2-1 Infineon Technologies	23,179	-	询价单	数据表	-	SC-79, SOD-523	Tape & Reel (TR)	Active	Schottky	70 V	1 V @ 15 mA	Small Signal =< 200mA (Io), Any Speed	100 ps	100 nA @ 50 V	2pF @ 0V, 1MHz	70mA	Automotive	AEC-Q101	Surface Mount	PG-SC79-2-1	150°C (Max)
IDV08E65D2XKSA1 DIODE GEN PURP 650V 8A TO220-2 Infineon Technologies	4,513	-	询价单	数据表	-	TO-220-2 Full Pack	Tube	Active	Standard	650 V	2.3 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	40 ns	40 µA @ 650 V	-	8A	-	-	Through Hole	PG-TO220-2 Full Pack	-40°C ~ 175°C
IDP15E65D1XKSA1 DIODE GEN PURP 650V 15A TO220-2 Infineon Technologies	6,367	-	询价单	数据表	-	TO-220-2	Tube	Active	Standard	650 V	1.7 V @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	114 ns	40 µA @ 650 V	-	15A	-	-	Through Hole	TO-220-2	-40°C ~ 175°C
BAS3010A03WE6327HTSA1 DIODE SCHOTTKY 30V 1A SOD323-2 Infineon Technologies	35,057	-	询价单	数据表	-	SC-76, SOD-323	Tape & Reel (TR)	Active	Schottky	30 V	470 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 30 V	35pF @ 5V, 1MHz	1A	-	-	Surface Mount	PG-SOD323-3D	-65°C ~ 125°C
IDH08G65C5XKSA2 DIODE SIL CARB 650V 8A TO220-2-1 Infineon Technologies	2,176	-	询价单	数据表	CoolSiC™+	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	1.7 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	140 µA @ 650 V	250pF @ 1V, 1MHz	8A	-	-	Through Hole	PG-TO220-2-1	-55°C ~ 175°C
BAS5202VH6327XTSA1 DIODE SCHOTTKY 45V 750MA SC79-2 Infineon Technologies	612,619	-	询价单	数据表	-	SC-79, SOD-523	Tape & Reel (TR)	Active	Schottky	45 V	600 mV @ 200 mA	Fast Recovery =< 500ns, > 200mA (Io)	-	10 µA @ 45 V	10pF @ 10V, 1MHz	750mA	-	-	Surface Mount	PG-SC79-2	150°C (Max)
IDWD10G120C5XKSA1 DIODE SIL CARB 1.2KV 34A TO247-2 Infineon Technologies	6,810	-	询价单	数据表	CoolSiC™+	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	1.65 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	80 µA @ 1200 V	730pF @ 1V, 1MHz	34A	-	-	Through Hole	PG-TO247-2	-55°C ~ 175°C

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