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制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
D2700U45X122XOSA1

D2700U45X122XOSA1

DIODE GP 4.5KV 2900A D12026K-1

Infineon Technologies

2 -
D2700U45X122XOSA1

数据表

- DO-200AE Tray Active Standard 4500 V - Standard Recovery >500ns, > 200mA (Io) - 150 mA @ 4500 V - 2900A - - Chassis Mount BG-D12026K-1 140°C (Max)
IDY10S120XKSA1

IDY10S120XKSA1

DIODE SIC 1.2KV 5A TO247HC-3

Infineon Technologies

7,422 -
IDY10S120XKSA1

数据表

CoolSiC™+ TO-247-3 Variant Tube Obsolete SiC (Silicon Carbide) Schottky 1200 V 1.8 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 120 µA @ 1200 V 250pF @ 1V, 1MHz 5A - - Through Hole PG-TO247HC-3 -55°C ~ 175°C
IDC15S120C5X1SA1

IDC15S120C5X1SA1

IC DIODE EMITTER CTLR WAFER

Infineon Technologies

5,095 -
IDC15S120C5X1SA1

数据表

- Die Bulk Active - - - - - - - - - - Surface Mount Sawn on foil -
SIDC59D170HX1SA2

SIDC59D170HX1SA2

DIODE GP 1.7KV 100A WAFER

Infineon Technologies

3,772 -
SIDC59D170HX1SA2

数据表

- Die Bulk Discontinued at Digi-Key Standard 1700 V 1.8 V @ 100 A Standard Recovery >500ns, > 200mA (Io) - 27 µA @ 1700 V - 100A - - Surface Mount Sawn on foil -55°C ~ 150°C
GATELEAD28134XPSA1

GATELEAD28134XPSA1

DUMMY 57

Infineon Technologies

3,463 -
GATELEAD28134XPSA1

数据表

- - Tray Active - - - - - - - - - - - - -
IDC73D120T6MX1SA2

IDC73D120T6MX1SA2

DIODE GP 1.2KV 150A WAFER

Infineon Technologies

2,069 -
IDC73D120T6MX1SA2

数据表

- Die Bulk Discontinued at Digi-Key Standard 1200 V 2.05 V @ 150 A Standard Recovery >500ns, > 200mA (Io) - 26 µA @ 1200 V - 150A - - Surface Mount Sawn on foil -40°C ~ 175°C
SIDC78D170HX1SA1

SIDC78D170HX1SA1

DIODE GP 1.7KV 150A WAFER

Infineon Technologies

9,675 -
SIDC78D170HX1SA1

数据表

- Die Bulk Discontinued at Digi-Key Standard 1700 V 1.8 V @ 150 A Standard Recovery >500ns, > 200mA (Io) - 27 µA @ 1700 V - 150A - - Surface Mount Sawn on foil -55°C ~ 150°C
ND260N16KHPSA1

ND260N16KHPSA1

DIODE GP 1.6KV 260A PB50ND-1

Infineon Technologies

7,062 -
ND260N16KHPSA1

数据表

- Module Bulk Obsolete Standard 1600 V - Standard Recovery >500ns, > 200mA (Io) - 30 mA @ 1600 V - 260A - - Chassis Mount BG-PB50ND-1 -40°C ~ 135°C
ND171N14KHPSA1

ND171N14KHPSA1

DIODE GEN PURP 1.4KV 104A PB34-1

Infineon Technologies

6,214 -
ND171N14KHPSA1

数据表

- Module Bulk Obsolete Standard 1400 V - Standard Recovery >500ns, > 200mA (Io) - 20 mA @ 1400 V - 104A - - Chassis Mount BG-PB34-1 -40°C ~ 135°C
D121N20BXPSA1

D121N20BXPSA1

DIODE GEN PURP 2KV 230A

Infineon Technologies

7,886 -
D121N20BXPSA1

数据表

- DO-205AA, DO-8, Stud Bulk Obsolete Standard 2000 V - Standard Recovery >500ns, > 200mA (Io) - 20 mA @ 2000 V - 230A - - Stud Mount - -40°C ~ 180°C
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