| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)(最大值) | 电压 - 正向 (Vf)(最大值)@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流(Io) | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
D2700U45X122XOSA1DIODE GP 4.5KV 2900A D12026K-1 Infineon Technologies |
2 | - |
|
数据表 |
- | DO-200AE | Tray | Active | Standard | 4500 V | - | Standard Recovery >500ns, > 200mA (Io) | - | 150 mA @ 4500 V | - | 2900A | - | - | Chassis Mount | BG-D12026K-1 | 140°C (Max) |
|
IDY10S120XKSA1DIODE SIC 1.2KV 5A TO247HC-3 Infineon Technologies |
7,422 | - |
|
数据表 |
CoolSiC™+ | TO-247-3 Variant | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 120 µA @ 1200 V | 250pF @ 1V, 1MHz | 5A | - | - | Through Hole | PG-TO247HC-3 | -55°C ~ 175°C |
|
IDC15S120C5X1SA1IC DIODE EMITTER CTLR WAFER Infineon Technologies |
5,095 | - |
|
数据表 |
- | Die | Bulk | Active | - | - | - | - | - | - | - | - | - | - | Surface Mount | Sawn on foil | - |
|
SIDC59D170HX1SA2DIODE GP 1.7KV 100A WAFER Infineon Technologies |
3,772 | - |
|
数据表 |
- | Die | Bulk | Discontinued at Digi-Key | Standard | 1700 V | 1.8 V @ 100 A | Standard Recovery >500ns, > 200mA (Io) | - | 27 µA @ 1700 V | - | 100A | - | - | Surface Mount | Sawn on foil | -55°C ~ 150°C |
|
GATELEAD28134XPSA1DUMMY 57 Infineon Technologies |
3,463 | - |
|
数据表 |
- | - | Tray | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
IDC73D120T6MX1SA2DIODE GP 1.2KV 150A WAFER Infineon Technologies |
2,069 | - |
|
数据表 |
- | Die | Bulk | Discontinued at Digi-Key | Standard | 1200 V | 2.05 V @ 150 A | Standard Recovery >500ns, > 200mA (Io) | - | 26 µA @ 1200 V | - | 150A | - | - | Surface Mount | Sawn on foil | -40°C ~ 175°C |
|
SIDC78D170HX1SA1DIODE GP 1.7KV 150A WAFER Infineon Technologies |
9,675 | - |
|
数据表 |
- | Die | Bulk | Discontinued at Digi-Key | Standard | 1700 V | 1.8 V @ 150 A | Standard Recovery >500ns, > 200mA (Io) | - | 27 µA @ 1700 V | - | 150A | - | - | Surface Mount | Sawn on foil | -55°C ~ 150°C |
|
ND260N16KHPSA1DIODE GP 1.6KV 260A PB50ND-1 Infineon Technologies |
7,062 | - |
|
数据表 |
- | Module | Bulk | Obsolete | Standard | 1600 V | - | Standard Recovery >500ns, > 200mA (Io) | - | 30 mA @ 1600 V | - | 260A | - | - | Chassis Mount | BG-PB50ND-1 | -40°C ~ 135°C |
|
ND171N14KHPSA1DIODE GEN PURP 1.4KV 104A PB34-1 Infineon Technologies |
6,214 | - |
|
数据表 |
- | Module | Bulk | Obsolete | Standard | 1400 V | - | Standard Recovery >500ns, > 200mA (Io) | - | 20 mA @ 1400 V | - | 104A | - | - | Chassis Mount | BG-PB34-1 | -40°C ~ 135°C |
|
D121N20BXPSA1DIODE GEN PURP 2KV 230A Infineon Technologies |
7,886 | - |
|
数据表 |
- | DO-205AA, DO-8, Stud | Bulk | Obsolete | Standard | 2000 V | - | Standard Recovery >500ns, > 200mA (Io) | - | 20 mA @ 2000 V | - | 230A | - | - | Stud Mount | - | -40°C ~ 180°C |