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| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)（最大值） | 电压 - 正向 (Vf)（最大值）@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流（Io） | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
D255N04BXPSA1DIODE GEN PURP 400V 255A Infineon Technologies |
2,790 | - |
|
数据表 |
- | DO-205AA, DO-8, Stud | Bulk | Obsolete | Standard | 400 V | - | Standard Recovery >500ns, > 200mA (Io) | - | 20 mA @ 400 V | - | 255A | - | - | Stud Mount | - | -40°C ~ 180°C |
|
DD800S17HA_B2RECTIFIER DIODE MODULE Infineon Technologies |
18 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
DD400S17K4CRECTIFIER DIODE MODULE Infineon Technologies |
21 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
SIDC85D170HX1SA2DIODE GP 1.7KV 150A WAFER Infineon Technologies |
6,274 | - |
|
数据表 |
- | Die | Bulk | Discontinued at Digi-Key | Standard | 1700 V | 1.8 V @ 150 A | Standard Recovery >500ns, > 200mA (Io) | - | 27 µA @ 1700 V | - | 150A | - | - | Surface Mount | Sawn on foil | -55°C ~ 150°C |
|
|
IDY15S120XKSA1DIODE SIC 1.2KV 7.5A TO247HC-3 Infineon Technologies |
6,713 | - |
|
数据表 |
CoolSiC™+ | TO-247-3 Variant | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 180 µA @ 1200 V | 375pF @ 1V, 1MHz | 7.5A | - | - | Through Hole | PG-TO247HC-3 | -55°C ~ 150°C |
|
|
SIDC105D120H8X1SA1DIODE GP 1.2KV 200A WAFER Infineon Technologies |
3,299 | - |
|
数据表 |
- | Die | Bulk | Discontinued at Digi-Key | Standard | 1200 V | 1.41 V @ 45 A | Standard Recovery >500ns, > 200mA (Io) | - | 27 µA @ 1200 V | - | 200A | - | - | Surface Mount | Sawn on foil | -40°C ~ 175°C |
|
IDM02G120C5XTMA1DIODE SIL CARB 1.2KV 2A TO252-2 Infineon Technologies |
8,389 | - |
|
数据表 |
CoolSiC™+ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | 1.65 V @ 2 A | No Recovery Time > 500mA (Io) | 0 ns | 18 µA @ 1200 V | 182pF @ 1V, 1MHz | 2A | - | - | Surface Mount | PG-TO252-2 | -55°C ~ 175°C |
|
|
IDC20S120C5X1SA1IC DIODE EMITTER CTLR WAFER Infineon Technologies |
3,339 | - |
|
数据表 |
- | Die | Bulk | Active | - | - | - | - | - | - | - | - | - | - | Surface Mount | Sawn on foil | - |
|
IDWD15G120C5XKSA1DIODE SIL CARB 1.2KV 49A TO247-2 Infineon Technologies |
18 | - |
|
数据表 |
CoolSiC™+ | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 1.65 V @ 15 A | No Recovery Time > 500mA (Io) | 0 ns | 124 µA @ 1200 V | 1050pF @ 1V, 1MHz | 49A | - | - | Through Hole | PG-TO247-2 | -55°C ~ 175°C |
|
|
GATELEAD28133HPSA1ACCY GATE LEAD FOR MODULE Infineon Technologies |
4,316 | - |
|
数据表 |
* | - | Tray | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
