订单满￥1000免运费
24小时咨询热线
0755 83957878
单个二极管
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)（最大值） | 电压 - 正向 (Vf)（最大值）@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流（Io） | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
AIDW30S65C5XKSA1DIODE SIL CARB 650V 30A TO247-3 Infineon Technologies |
24 | - |
|
数据表 |
CoolSiC™ | TO-247-3 | Bulk | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 1.7 V @ 30 A | No Recovery Time > 500mA (Io) | 0 ns | 120 µA @ 650 V | 860pF @ 1V, 1MHz | 30A | Automotive | AEC-Q100/101 | Through Hole | PG-TO247-3-41 | -40°C ~ 175°C |
|
IDW15S120FKSA1DIODE SIL CARB 1.2KV 15A TO247-3 Infineon Technologies |
9,240 | - |
|
数据表 |
CoolSiC™+ | TO-247-3 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 1.8 V @ 15 A | No Recovery Time > 500mA (Io) | 0 ns | 305 µA @ 1200 V | 870pF @ 1V, 1MHz | 15A | - | - | Through Hole | PG-TO247-3 | -55°C ~ 175°C |
|
IDH15S120AKSA1DIODE SIL CARB 1.2KV 15A TO220-2 Infineon Technologies |
4,906 | - |
|
数据表 |
CoolSiC™+ | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 1.8 V @ 15 A | No Recovery Time > 500mA (Io) | 0 ns | 360 µA @ 1200 V | 750pF @ 1V, 1MHz | 15A | - | - | Through Hole | PG-TO220-2-2 | -55°C ~ 175°C |
|
DDB6U100N16RBOSA1DIODE GP 1.6KV 104A AG-ECONO2A Infineon Technologies |
79 | - |
|
数据表 |
- | Module | Bulk | Active | Standard | 1600 V | 1.55 V @ 100 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 mA @ 1600 V | - | 104A | - | - | Chassis Mount | AG-ECONO2A | 150°C |
|
|
ND104N16KHPSA1DIODE GEN PURP 1.6KV 104A PB20-1 Infineon Technologies |
2,812 | - |
|
数据表 |
- | Module | Bulk | Obsolete | Standard | 1600 V | - | Standard Recovery >500ns, > 200mA (Io) | - | 20 mA @ 1600 V | - | 104A | - | - | Chassis Mount | BG-PB20-1 | -40°C ~ 135°C |
|
|
D629N44TPRRECTIFIER DIODE MODULE Infineon Technologies |
34 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
IDD12SG60CXTMA2DIODE SIL CARB 600V 12A TO252-3 Infineon Technologies |
3,000 | - |
|
数据表 |
CoolSiC™+ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 600 V | 2.1 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 600 V | 310pF @ 1V, 1MHz | 12A | - | - | Surface Mount | PG-TO252-3 | -55°C ~ 175°C |
|
|
SIDC14D120H6X1SA1DIODE GP 1.2KV 25A WAFER Infineon Technologies |
5,786 | - |
|
数据表 |
- | Die | Bulk | Discontinued at Digi-Key | Standard | 1200 V | 1.6 V @ 25 A | Standard Recovery >500ns, > 200mA (Io) | - | 27 µA @ 1200 V | - | 25A | - | - | Surface Mount | Sawn on foil | -55°C ~ 150°C |
|
|
IDC05S120C5X1SA1IC DIODE EMITTER CTLR WAFER Infineon Technologies |
2,637 | - |
|
数据表 |
- | Die | Bulk | Active | - | - | - | - | - | - | - | - | - | - | Surface Mount | Sawn on foil | - |
|
SDP06S60DIODE SIL CARB 600V 6A TO220-3-1 Infineon Technologies |
7,130 | - |
|
数据表 |
- | TO-220-3 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 600 V | 1.7 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 600 V | 300pF @ 0V, 1MHz | 6A | - | - | Through Hole | PG-TO220-3-1 | -55°C ~ 175°C |
