| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)(最大值) | 电压 - 正向 (Vf)(最大值)@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流(Io) | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
PX8244HDMG008XTMA1LED PX8244HDMG008XTMA1 Infineon Technologies |
8,000 | - |
|
数据表 |
- | - | Bulk | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
IDC10D120T6MX1SA1DIODE GP 1.2KV 15A WAFER Infineon Technologies |
7,472 | - |
|
数据表 |
- | Die | Bulk | Obsolete | Standard | 1200 V | 2.05 V @ 15 A | Standard Recovery >500ns, > 200mA (Io) | - | 3.5 µA @ 1200 V | - | 15A | - | - | Surface Mount | Sawn on foil | -40°C ~ 175°C |
|
SDD04S60DIODE SIL CARB 600V 4A TO252-31 Infineon Technologies |
8,136 | - |
|
数据表 |
CoolSiC™+ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 600 V | 1.9 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 600 V | 150pF @ 0V, 1MHz | 4A | - | - | Surface Mount | PG-TO252-3-11 | -55°C ~ 175°C |
|
IDDD12G65C6XTMA1DIODE SIL CARB 650V 34A HDSOP-10 Infineon Technologies |
2,234 | - |
|
数据表 |
CoolSiC™+ | 10-PowerSOP Module | Tape & Reel (TR) | Last Time Buy | SiC (Silicon Carbide) Schottky | 650 V | - | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 420 V | 594pF @ 1V, 1MHz | 34A | - | - | Surface Mount | PG-HDSOP-10-1 | -55°C ~ 175°C |
|
SDT08S60DIODE SIL CARB 600V 8A TO220-2-2 Infineon Technologies |
6,617 | - |
|
数据表 |
CoolSiC™+ | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 600 V | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 300 µA @ 600 V | 280pF @ 0V, 1MHz | 8A | - | - | Through Hole | PG-TO220-2-2 | -55°C ~ 175°C |
|
PX8746JDNG029XTMA1LED PX8746JDNG029XTMA1 Infineon Technologies |
8,384 | - |
|
数据表 |
- | - | Bulk | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
IDD04S60CBUMA1DIODE SIC 600V 5.6A TO252-31 Infineon Technologies |
2,579 | - |
|
数据表 |
CoolSiC™+ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 600 V | 1.9 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 600 V | 130pF @ 1V, 1MHz | 5.6A | - | - | Surface Mount | PG-TO252-3-11 | -55°C ~ 175°C |
|
IDW10S120FKSA1DIODE SIL CARB 1.2KV 10A TO247-3 Infineon Technologies |
4,069 | - |
|
数据表 |
CoolSiC™+ | TO-247-3 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 240 µA @ 1200 V | 580pF @ 1V, 1MHz | 10A | - | - | Through Hole | PG-TO247-3-41 | -55°C ~ 175°C |
|
IDH10S120AKSA1DIODE SIL CARB 1.2KV 10A TO220-2 Infineon Technologies |
9,194 | - |
|
数据表 |
CoolSiC™+ | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 240 µA @ 1200 V | 500pF @ 1V, 1MHz | 10A | - | - | Through Hole | PG-TO220-2-2 | -55°C ~ 175°C |
|
IDW30G65C5FKSA1DIODE SIL CARB 650V 30A TO247-3 Infineon Technologies |
7,764 | - |
|
数据表 |
CoolSiC™+ | TO-247-3 | Tube | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 650 V | 1.7 V @ 30 A | No Recovery Time > 500mA (Io) | 0 ns | 1.1 mA @ 650 V | 860pF @ 1V, 1MHz | 30A | - | - | Through Hole | PG-TO247-3-1 | -55°C ~ 175°C |