| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)(最大值) | 电压 - 正向 (Vf)(最大值)@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流(Io) | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IDK05G65C5XTMA1DIODE SIL CARB 650V 5A TO263-2 Infineon Technologies |
2,842 | - |
|
数据表 |
CoolSiC™+ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 650 V | 1.8 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 830 µA @ 650 V | 160pF @ 1V, 1MHz | 5A | - | - | Surface Mount | PG-TO263-2 | -55°C ~ 175°C |
|
IDD05SG60CXTMA2DIODE SIL CARB 600V 5A TO252-3 Infineon Technologies |
5,000 | - |
|
数据表 |
CoolSiC™+ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 600 V | 2.3 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 600 V | 110pF @ 1V, 1MHz | 5A | - | - | Surface Mount | PG-TO252-3 | -55°C ~ 175°C |
|
IDP23011XUMA1AC/DC DIGITAL PLATFORM Infineon Technologies |
5,705 | - |
|
数据表 |
- | - | Tape & Reel (TR) | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
IDP2308T1XUMA1AC/DC DIGITAL PLATFORM Infineon Technologies |
5,108 | - |
|
数据表 |
* | - | Tape & Reel (TR) | Last Time Buy | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
IDT04S60CRECTIFIER DIODE, SCHOTTKY Infineon Technologies |
414 | - |
|
数据表 |
- | TO-220-2 | Bulk | Active | SiC (Silicon Carbide) Schottky | 600 V | 2.4 V @ 3 A | No Recovery Time > 500mA (Io) | 0 ns | 15 µA @ 600 V | 60pF @ 1V, 1MHz | 3A | - | - | Through Hole | PG-TO220-2 | -55°C ~ 175°C |
|
IDP2321XUMA1IC AC/DC DGTL PLATFORM 16SOIC Infineon Technologies |
3,381 | - |
|
数据表 |
* | - | Tape & Reel (TR) | Not For New Designs | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
IDV05S60CXKSA1DIODE SIL CARB 600V 5A TO220FP Infineon Technologies |
5,855 | - |
|
数据表 |
CoolSiC™+ | TO-220-2 Full Pack | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 600 V | 1.7 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 70 µA @ 600 V | 240pF @ 1V, 1MHz | 5A | - | - | Through Hole | PG-TO220-2 Full Pack | -55°C ~ 175°C |
|
IDK02G65C5XTMA2DIODE SIL CARB 650V 2A TO263-2 Infineon Technologies |
588 | - |
|
数据表 |
CoolSiC™+ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Last Time Buy | SiC (Silicon Carbide) Schottky | 650 V | 1.8 V @ 2 A | No Recovery Time > 500mA (Io) | 0 ns | 330 µA @ 650 V | 70pF @ 1V, 1MHz | 2A | - | - | Surface Mount | PG-TO263-2 | -55°C ~ 175°C |
|
IDH02G65C5XKSA2DIODE SIL CARB 650V 2A TO220-2 Infineon Technologies |
458 | - |
|
数据表 |
CoolSiC™+ | TO-220-2 | Tube | Last Time Buy | SiC (Silicon Carbide) Schottky | 650 V | 1.7 V @ 2 A | No Recovery Time > 500mA (Io) | 0 ns | - | 70pF @ 1V, 1MHz | 2A | - | - | Through Hole | PG-TO220-2 | -55°C ~ 175°C |
|
IDK09G65C5XTMA2DIODE SIL CARB 650V 9A TO263-2 Infineon Technologies |
8,118 | - |
|
数据表 |
CoolSiC™+ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 1.8 V @ 9 A | No Recovery Time > 500mA (Io) | 0 ns | 1.6 mA @ 650 V | 270pF @ 1V, 1MHz | 9A | - | - | Surface Mount | PG-TO263-2 | -55°C ~ 175°C |