订单满￥1000免运费
24小时咨询热线
0755 83957878
单个二极管
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)（最大值） | 电压 - 正向 (Vf)（最大值）@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流（Io） | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GLHUELSE1626XPSA1DUMMY 57 Infineon Technologies |
3,936 | - |
|
数据表 |
- | - | Tray | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
GLHUELSE1627XPSA1DUMMY 57 Infineon Technologies |
2,798 | - |
|
数据表 |
- | - | Tray | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
IDP06E60XKSA1DIODE GP 600V 14.7A TO220-2-1 Infineon Technologies |
8,000 | - |
|
数据表 |
- | TO-220-2 | Bulk | Active | Standard | 600 V | 2 V @ 6 A | Fast Recovery =< 500ns, > 200mA (Io) | 70 ns | 50 µA @ 600 V | - | 14.7A | Automotive | AEC-Q101 | Through Hole | PG-TO220-2-1 | -40°C ~ 175°C |
|
IDL02G65C5XUMA1DIODE SIL CARBIDE 650V 2A VSON-4 Infineon Technologies |
9,383 | - |
|
数据表 |
CoolSiC™+ | 4-PowerTSFN | Tape & Reel (TR) | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 650 V | 1.7 V @ 2 A | No Recovery Time > 500mA (Io) | 0 ns | 35 µA @ 650 V | 70pF @ 1V, 1MHz | 2A | - | - | Surface Mount | PG-VSON-4 | -55°C ~ 175°C |
|
IDP23013XUMA1IC AC/DC DGTL PLATFORM 16SOIC Infineon Technologies |
2,820 | - |
|
数据表 |
* | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
IDV03S60CDIODE SIL CARB 600V 3A TO220-22 Infineon Technologies |
1,500 | - |
|
数据表 |
thinQ!™ | TO-220-2 Full Pack | Bulk | Active | SiC (Silicon Carbide) Schottky | 600 V | 1.9 V @ 3 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 600 V | 90pF @ 1V, 1MHz | 3A (DC) | - | - | Through Hole | PG-TO220-2-22 | -55°C ~ 175°C |
|
IDB18E120ATMA1DIODE GEN PURP 1.2KV 31A TO263-3 Infineon Technologies |
2,038 | - |
|
数据表 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | Standard | 1200 V | 2.15 V @ 18 A | Fast Recovery =< 500ns, > 200mA (Io) | 195 ns | 100 µA @ 1200 V | - | 31A | - | - | Surface Mount | PG-TO263-3-2 | -55°C ~ 150°C |
|
IDD03SG60CXTMA1DIODE SIL CARB 600V 3A TO252-3 Infineon Technologies |
2,889 | - |
|
数据表 |
CoolSiC™+ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 600 V | 2.3 V @ 3 A | No Recovery Time > 500mA (Io) | 0 ns | 15 µA @ 600 V | 60pF @ 1V, 1MHz | 3A | - | - | Surface Mount | PG-TO252-3 | -55°C ~ 175°C |
|
|
IDDD06G65C6XTMA1DIODE SIL CARB 650V 18A HDSOP-10 Infineon Technologies |
543 | - |
|
数据表 |
CoolSiC™+ | 10-PowerSOP Module | Bulk | Active | SiC (Silicon Carbide) Schottky | 650 V | - | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 420 V | 302pF @ 1V, 1MHz | 18A | - | - | Surface Mount | PG-HDSOP-10-1 | -55°C ~ 175°C |
|
|
SIDC09D60E6 UNSAWNDIODE GP 600V 20A WAFER Infineon Technologies |
6,182 | - |
|
数据表 |
- | Die | Bulk | Discontinued at Digi-Key | Standard | 600 V | 1.7 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 27 µA @ 600 V | - | 20A | - | - | Surface Mount | Sawn on foil | -55°C ~ 150°C |
