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制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
IDL02G65C5XUMA2

IDL02G65C5XUMA2

DIODE SIL CARBIDE 650V 2A VSON-4

Infineon Technologies

2,850 -
IDL02G65C5XUMA2

数据表

CoolSiC™+ 4-PowerTSFN Tape & Reel (TR) Obsolete SiC (Silicon Carbide) Schottky 650 V 1.7 V @ 2 A No Recovery Time > 500mA (Io) 0 ns 35 µA @ 650 V 70pF @ 1V, 1MHz 2A - - Surface Mount PG-VSON-4 -55°C ~ 175°C
IDH05SG60CXKSA1

IDH05SG60CXKSA1

DIODE SIL CARB 600V 5A TO220-2-2

Infineon Technologies

9,538 -
IDH05SG60CXKSA1

数据表

CoolSiC™+ TO-220-2 Tube Discontinued at Digi-Key SiC (Silicon Carbide) Schottky 600 V 2.3 V @ 5 A No Recovery Time > 500mA (Io) 0 ns 30 µA @ 600 V 110pF @ 1V, 1MHz 5A - - Through Hole PG-TO220-2-2 -55°C ~ 175°C
IDB09E60ATMA1

IDB09E60ATMA1

DIODE GP 600V 19.3A TO263-3-2

Infineon Technologies

3,881 -
IDB09E60ATMA1

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete Standard 600 V 2 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 75 ns 50 µA @ 600 V - 19.3A - - Surface Mount PG-TO263-3-2 -55°C ~ 175°C
IDH06S60CAKSA1

IDH06S60CAKSA1

DIODE SIL CARB 600V 6A TO220-2-2

Infineon Technologies

3,109 -
IDH06S60CAKSA1

数据表

CoolSiC™+ TO-220-2 Tube Discontinued at Digi-Key SiC (Silicon Carbide) Schottky 600 V 1.7 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 80 µA @ 600 V 280pF @ 1V, 1MHz 6A - - Through Hole PG-TO220-2-2 -55°C ~ 175°C
SIDC08D60C6

SIDC08D60C6

DIODE GP 600V 30A WAFER

Infineon Technologies

7,497 -
SIDC08D60C6

数据表

- Die Bulk Discontinued at Digi-Key Standard 600 V 1.95 V @ 30 A Standard Recovery >500ns, > 200mA (Io) - 27 µA @ 600 V - 30A - - Surface Mount Sawn on foil -40°C ~ 175°C
IDV06S60C

IDV06S60C

RECTIFIER DIODE, SCHOTTKY

Infineon Technologies

1,034 -
IDV06S60C

数据表

- - Bulk Active - - - - - - - - - - - - -
IDK08G65C5XTMA1

IDK08G65C5XTMA1

DIODE SIL CARB 650V 8A TO263-2

Infineon Technologies

9,902 -
IDK08G65C5XTMA1

数据表

CoolSiC™+ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Discontinued at Digi-Key SiC (Silicon Carbide) Schottky 650 V 1.8 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 1.4 mA @ 650 V 250pF @ 1V, 1MHz 8A - - Surface Mount PG-TO263-2 -55°C ~ 175°C
IDB06S60CATMA2

IDB06S60CATMA2

DIODE SIL CARB 600V 6A TO263-3-2

Infineon Technologies

6,183 -
IDB06S60CATMA2

数据表

CoolSiC™+ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Discontinued at Digi-Key SiC (Silicon Carbide) Schottky 600 V 1.7 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 80 µA @ 600 V 280pF @ 1V, 1MHz 6A - - Surface Mount PG-TO263-3-2 -
IDK09G65C5XTMA1

IDK09G65C5XTMA1

DIODE SIL CARB 650V 9A TO263-2

Infineon Technologies

7,212 -
IDK09G65C5XTMA1

数据表

CoolSiC™+ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Discontinued at Digi-Key SiC (Silicon Carbide) Schottky 650 V 1.8 V @ 9 A No Recovery Time > 500mA (Io) 0 ns 1.6 mA @ 650 V 270pF @ 1V, 1MHz 9A - - Surface Mount PG-TO263-2 -55°C ~ 175°C
SDT05S60XK

SDT05S60XK

DIODE SIL CARB 600V 5A TO220-2

Infineon Technologies

700 -
SDT05S60XK

数据表

- TO-220-2 Bulk Active SiC (Silicon Carbide) Schottky 600 V 1.7 V @ 5 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 600 V 170pF @ 1V, 1MHz 5A - - Through Hole PG-TO220-2 -55°C ~ 175°C
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