订单满￥1000免运费
24小时咨询热线
0755 83957878
单个二极管
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)（最大值） | 电压 - 正向 (Vf)（最大值）@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流（Io） | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
BAS3005S02LRHE6327XTSA1DIODE SCHOTT 30V 500MA TSLP-2-17 Infineon Technologies |
4,485 | - |
|
数据表 |
- | SOD-882 | Tape & Reel (TR) | Active | Schottky | 30 V | 500 mV @ 500 mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 300 µA @ 30 V | 15pF @ 5V, 1MHz | 500mA | - | - | Surface Mount | PG-TSLP-2-17 | -55°C ~ 150°C |
|
IDV03S60CXKSA1DIODE SIL CARB 600V 3A TO220-2FP Infineon Technologies |
9,303 | - |
|
数据表 |
CoolSiC™+ | TO-220-2 Full Pack | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 600 V | 1.9 V @ 3 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 600 V | 90pF @ 1V, 1MHz | 3A | - | - | Through Hole | PG-TO220-2 Full Pack | -55°C ~ 175°C |
|
IDB23E60ATMA1DIODE GP 600V 41A TO263-3-2 Infineon Technologies |
7,993 | - |
|
数据表 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | Standard | 600 V | 2 V @ 23 A | Fast Recovery =< 500ns, > 200mA (Io) | 120 ns | 50 µA @ 600 V | - | 41A | - | - | Surface Mount | PG-TO263-3-2 | -55°C ~ 175°C |
|
IDH05G65C5XKSA2DIODE SIL CARB 650V 5A TO220-2 Infineon Technologies |
6,983 | - |
|
数据表 |
CoolSiC™+ | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 1.7 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 90 µA @ 650 V | 160pF @ 1V, 1MHz | 5A | - | - | Through Hole | PG-TO220-2 | -55°C ~ 175°C |
|
IDT02S60CDIODE SIL CARB 600V 3A TO220-2 Infineon Technologies |
54,270 | - |
|
数据表 |
- | TO-220-2 | Bulk | Active | SiC (Silicon Carbide) Schottky | 600 V | 2.4 V @ 3 A | No Recovery Time > 500mA (Io) | 0 ns | 15 µA @ 600 V | 60pF @ 1V, 1MHz | 3A | - | - | Through Hole | PG-TO220-2 | -55°C ~ 175°C |
|
|
IDK03G65C5XTMA1DIODE SIL CARB 650V 3A TO263-2 Infineon Technologies |
2,704 | - |
|
数据表 |
CoolSiC™+ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 650 V | 1.8 V @ 3 A | No Recovery Time > 500mA (Io) | 0 ns | 500 µA @ 650 V | 100pF @ 1V, 1MHz | 3A | - | - | Surface Mount | PG-TO263-2 | -55°C ~ 175°C |
|
|
IDP09E120XKSA1DIODE GP 1.2KV 23A TO220-2-1 Infineon Technologies |
5,305 | - |
|
数据表 |
- | TO-220-2 | Bulk | Active | Standard | 1200 V | 2.15 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 140 ns | 100 µA @ 1200 V | - | 23A | - | - | Through Hole | PG-TO220-2-1 | -55°C ~ 150°C |
|
|
IDP15E60XKSA1DIODE GP 600V 29.2A TO220-2-2 Infineon Technologies |
3,228 | - |
|
数据表 |
- | TO-220-2 | Bulk | Obsolete | Standard | 600 V | 2 V @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | 87 ns | 50 µA @ 600 V | - | 29.2A | - | - | Through Hole | PG-TO220-2-2 | -55°C ~ 175°C |
|
|
IDK03G65C5XTMA2DIODE SIL CARB 650V 3A TO263-2 Infineon Technologies |
6,439 | - |
|
数据表 |
CoolSiC™+ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 1.8 V @ 3 A | No Recovery Time > 500mA (Io) | 0 ns | 500 µA @ 650 V | 100pF @ 1V, 1MHz | 3A | - | - | Surface Mount | PG-TO263-2 | -55°C ~ 175°C |
|
PX3847DDQG004XUMA1LED PX3847DDQG004XUMA1 Infineon Technologies |
5,000 | - |
|
数据表 |
- | - | Bulk | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - |
