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| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)（最大值） | 电压 - 正向 (Vf)（最大值）@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流（Io） | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
BAS2103WE6327HTSA1DIODE GP 200V 250MA SOD323-2 Infineon Technologies |
208,008 | - |
|
数据表 |
- | SC-76, SOD-323 | Tape & Reel (TR) | Last Time Buy | Standard | 200 V | 1.25 V @ 200 mA | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 100 nA @ 200 V | 5pF @ 0V, 1MHz | 250mA | - | - | Surface Mount | PG-SOD323-3D | 150°C (Max) |
|
BAS21E6327HTSA1DIODE GEN PURP 200V 250MA SOT23 Infineon Technologies |
52,846 | - |
|
数据表 |
- | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Last Time Buy | Standard | 200 V | 1.25 V @ 200 mA | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 100 nA @ 200 V | 5pF @ 0V, 1MHz | 250mA | - | - | Surface Mount | PG-SOT23 | 150°C (Max) |
|
|
BAS1603WE6327HTSA1DIODE GP 80V 250MA SOD323-2 Infineon Technologies |
1,736 | - |
|
数据表 |
- | SC-76, SOD-323 | Tape & Reel (TR) | Last Time Buy | Standard | 80 V | 1.25 V @ 150 mA | Fast Recovery =< 500ns, > 200mA (Io) | 4 ns | 1 µA @ 75 V | 2pF @ 0V, 1MHz | 250mA | - | - | Surface Mount | PG-SOD323-3D | 150°C (Max) |
|
IDV02S60CXKSA1DIODE SIL CARB 600V 2A TO220-2FP Infineon Technologies |
2,940 | - |
|
数据表 |
CoolSiC™+ | TO-220-2 Full Pack | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 600 V | 1.9 V @ 2 A | No Recovery Time > 500mA (Io) | 0 ns | 15 µA @ 600 V | 60pF @ 1V, 1MHz | 2A | - | - | Through Hole | PG-TO220-2 Full Pack | -55°C ~ 175°C |
|
IDD09E60BUMA1DIODE GP 600V 19.3A TO252-3 Infineon Technologies |
4,298 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | Standard | 600 V | 2 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 50 µA @ 600 V | - | 19.3A | - | - | Surface Mount | PG-TO252-3 | -55°C ~ 175°C |
|
IDH03G65C5XKSA2DIODE SIL CARB 650V 3A TO220-2-1 Infineon Technologies |
9,187 | - |
|
数据表 |
CoolSiC™+ | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 1.7 V @ 3 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 100pF @ 1V, 1MHz | 3A | - | - | Through Hole | PG-TO220-2-1 | -55°C ~ 175°C |
|
|
BAL99E6327HTSA1DIODE GEN PURP 80V 250MA SOT23-3 Infineon Technologies |
6,812 | - |
|
数据表 |
- | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Obsolete | Standard | 80 V | 1.25 V @ 150 mA | Fast Recovery =< 500ns, > 200mA (Io) | 4 ns | 1 µA @ 70 V | 1.5pF @ 0V, 1MHz | 250mA | - | - | Surface Mount | PG-SOT23 | -65°C ~ 150°C |
|
IDDD06G65C6XTMA1DIODE SIL CARB 650V 18A HDSOP-10 Infineon Technologies |
7,877 | - |
|
数据表 |
CoolSiC™+ | 10-PowerSOP Module | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | - | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 420 V | 302pF @ 1V, 1MHz | 18A | - | - | Surface Mount | PG-HDSOP-10-1 | -55°C ~ 175°C |
|
|
SIDC03D120H6X1SA3DIODE GP 1.2KV 3A WAFER Infineon Technologies |
2,798 | - |
|
数据表 |
- | Die | Bulk | Discontinued at Digi-Key | Standard | 1200 V | 1.6 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | - | 27 µA @ 1200 V | - | 3A | - | - | Surface Mount | Sawn on foil | -55°C ~ 150°C |
|
IDK05G65C5XTMA2DIODE SIL CARB 650V 5A TO263-2 Infineon Technologies |
4,039 | - |
|
数据表 |
CoolSiC™+ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 1.8 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 830 µA @ 650 V | 160pF @ 1V, 1MHz | 5A | - | - | Surface Mount | PG-TO263-2 | -55°C ~ 175°C |
