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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
CDA04N30X1C

CDA04N30X1C

GANFET 40V 30A .004 OHM 4DAPT

EPC Space, LLC

88 -
CDA04N30X1C

数据表

- - Tray Active - - - - - - - - - - - - - - - - -
IRF6604TR1

IRF6604TR1

MOSFET N-CH 30V 12A DIRECTFET

Infineon Technologies

8,960 -
IRF6604TR1

数据表

HEXFET® DirectFET™ Isometric MQ Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 12A (Ta), 49A (Tc) 4.5V, 7V 11.5mOhm @ 12A, 7V Surface Mount 2.1V @ 250µA 26 nC @ 4.5 V 30 V ±12V 2270 pF @ 15 V - - DIRECTFET™ MQ - 2.3W (Ta), 42W (Tc) -40°C ~ 150°C (TJ)
CDA10N30X1C

CDA10N30X1C

GANFET 100V 30A .009 OHM 4DAPT

EPC Space, LLC

100 -
CDA10N30X1C

数据表

- - Tray Active - - - - - - - - - - - - - - - - -
STF60N55F3

STF60N55F3

MOSFET N-CH 55V 42A TO220FP

STMicroelectronics

7,664 -
STF60N55F3

数据表

STripFET™ III TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 42A (Tc) 10V 8.5mOhm @ 32A, 10V Through Hole 4V @ 250µA 45 nC @ 10 V 55 V ±20V 2200 pF @ 25 V - - TO-220FP - 30W (Tc) -55°C ~ 175°C (TJ)
CDA10N05X2C

CDA10N05X2C

GANFET 100V 5A .030 OHM 4DAPT

EPC Space, LLC

100 -
CDA10N05X2C

数据表

- - Tray Active - - - - - - - - - - - - - - - - -
IRFR120Z

IRFR120Z

MOSFET N-CH 100V 8.7A DPAK

Infineon Technologies

9,443 -
IRFR120Z

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Obsolete N-Channel MOSFET (Metal Oxide) 8.7A (Tc) 10V 190mOhm @ 5.2A, 10V Surface Mount 4V @ 250µA 10 nC @ 10 V 100 V ±20V 310 pF @ 25 V - - TO-252AA (DPAK) - 35W (Tc) -55°C ~ 175°C (TJ)
CDA20N18X3C

CDA20N18X3C

GANFET 200V 18A .025 OHM 4DAPT

EPC Space, LLC

64 -
CDA20N18X3C

数据表

- - Tray Active - - - - - - - - - - - - - - - - -
STF18N65M5

STF18N65M5

MOSFET N-CH 650V 15A TO220FP

STMicroelectronics

6,220 -
STF18N65M5

数据表

MDmesh™ V TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 15A (Tc) 10V 220mOhm @ 7.5A, 10V Through Hole 5V @ 250µA 31 nC @ 10 V 650 V ±25V 1240 pF @ 100 V - - TO-220FP - 25W (Tc) 150°C (TJ)
EPC7004BC

EPC7004BC

GAN FET HEMT100V30A COTS 4FSMD-B

EPC Space, LLC

41 -
EPC7004BC

数据表

- 4-SMD, No Lead Tray Active N-Channel GaNFET (Gallium Nitride) 30A (Tc) 5V 13mOhm @ 30A, 5V Surface Mount 2.5V @ 7mA 7 nC @ 5 V 100 V +6V, -4V 797 pF @ 50 V - - 4-SMD - - -55°C ~ 150°C (TJ)
IRFB9N30A

IRFB9N30A

MOSFET N-CH 300V 9.3A TO220AB

Vishay Siliconix

8,773 -
IRFB9N30A

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 9.3A (Tc) 10V 450mOhm @ 5.6A, 10V Through Hole 4V @ 250µA 33 nC @ 10 V 300 V ±30V 920 pF @ 25 V - - TO-220AB - 96W (Tc) -55°C ~ 150°C (TJ)
EPC7001BC

EPC7001BC

GAN FET HEMT 40V30A COTS 4FSMD-B

EPC Space, LLC

146 -
EPC7001BC

数据表

- - Bulk Active - - - - - - - - - - - - - - - - -
SI7390DP-T1-GE3

SI7390DP-T1-GE3

MOSFET N-CH 30V 9A PPAK SO-8

Vishay Siliconix

7,206 -
SI7390DP-T1-GE3

数据表

TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 9A (Ta) 4.5V, 10V 9.5mOhm @ 15A, 10V Surface Mount 3V @ 250µA 15 nC @ 4.5 V 30 V ±20V - - - PowerPAK® SO-8 - 1.8W (Ta) -55°C ~ 150°C (TJ)
EPC7002AC

EPC7002AC

GAN FET HEMT 40V 8A COTS 4FSMD-A

EPC Space, LLC

89 -
EPC7002AC

数据表

- - Bulk Active - - - - - - - - - - - - - - - - -
TSM60NB380CF C0G

TSM60NB380CF C0G

MOSFET N-CH 600V 11A ITO220S

Taiwan Semiconductor Corporation

7,713 -
TSM60NB380CF C0G

数据表

- TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 11A (Tc) 10V 380mOhm @ 2.7A, 10V Through Hole 4V @ 250µA 21 nC @ 10 V 600 V ±30V 810 pF @ 100 V - - ITO-220S - 62.5W (Tc) -55°C ~ 150°C (TJ)
EPC7007BSH

EPC7007BSH

GAN FET HEMT 200V 18A 4UB

EPC Space, LLC

50 -
EPC7007BSH

数据表

eGaN®, FSMD-B 4-SMD, No Lead Bulk Active N-Channel MOSFET (Metal Oxide) 18A (Tc) 5V 28mOhm @ 18A, 5V Surface Mount 2.5V @ 3mA 7 nC @ 5 V 200 V +6V, -4V 900 pF @ 100 V - - 4-SMD - - -55°C ~ 150°C (TJ)
AOTF2146L

AOTF2146L

N

Alpha & Omega Semiconductor Inc.

6,947 -
AOTF2146L

数据表

AlphaSGT™ TO-220-3 Full Pack Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 42A (Ta), 80A (Tc) 4.5V, 10V 2.8mOhm @ 20A, 10V Through Hole 2.5V @ 250µA 70 nC @ 10 V 40 V ±20V 3830 pF @ 20 V - - TO-220F - 8.3W (Ta), 29.5W (Tc) -55°C ~ 150°C (TJ)
EPC7001BSH

EPC7001BSH

GAN FET HEMT 40V 30A 4FSMD-B

EPC Space, LLC

50 -
EPC7001BSH

数据表

- - Bulk Active - - - - - - - - - - - - - - - - -
IPI50R350CP

IPI50R350CP

MOSFET N-CH 550V 10A TO262-3

Infineon Technologies

9,595 -
IPI50R350CP

数据表

CoolMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 10A (Tc) 10V 350mOhm @ 5.6A, 10V Through Hole 3.5V @ 370µA 25 nC @ 10 V 550 V ±20V 1020 pF @ 100 V - - PG-TO262-3 - 89W (Tc) -55°C ~ 150°C (TJ)
IRF7424TR

IRF7424TR

MOSFET P-CH 30V 11A 8SO

Infineon Technologies

9,134 -
IRF7424TR

数据表

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 11A (Tc) 4.5V, 10V 13.5mOhm @ 11A, 10V Surface Mount 2.5V @ 250µA 110 nC @ 10 V 30 V ±20V 4030 pF @ 25 V - - 8-SOIC - 2.5W (Ta) -55°C ~ 155°C (TJ)
IRF7451TR

IRF7451TR

MOSFET N-CH 150V 3.6A 8SO

Infineon Technologies

6,887 -
IRF7451TR

数据表

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 3.6A (Ta) 10V 90mOhm @ 2.2A, 10V Surface Mount 5.5V @ 250µA 41 nC @ 10 V 150 V ±30V 990 pF @ 25 V - - 8-SO - 2.5W (Ta) -55°C ~ 150°C (TJ)
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