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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
PSMP020-30YEX

PSMP020-30YEX

PSMP020-30YE/SOT669/LFPAK

Nexperia USA Inc.

4,505 -
PSMP020-30YEX

数据表

- - Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 41.1A 10V - - - - 30 V - - - - - - - -
PSMP057-60YEX

PSMP057-60YEX

PSMP057-60YE/SOT669/LFPAK

Nexperia USA Inc.

9,406 -
PSMP057-60YEX

数据表

- - Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 22.7A 10V - - - - 60 V - - - - - - - -
IPI057N08N3 G

IPI057N08N3 G

MOSFET N-CH 80V 80A TO262-3

Infineon Technologies

7,516 -
IPI057N08N3 G

数据表

OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 80A (Tc) 6V, 10V 5.7mOhm @ 80A, 10V Through Hole 3.5V @ 90µA 69 nC @ 10 V 80 V ±20V 4750 pF @ 40 V - - PG-TO262-3 - 150W (Tc) -55°C ~ 175°C (TJ)
IRC740PBF

IRC740PBF

MOSFET N-CH 400V 10A TO220-5

Vishay Siliconix

7,362 -
IRC740PBF

数据表

HEXFET® TO-220-5 Tube Obsolete N-Channel MOSFET (Metal Oxide) 10A (Tc) 10V 550mOhm @ 6A, 10V Through Hole 4V @ 250µA 66 nC @ 10 V 400 V ±20V 1200 pF @ 25 V - Current Sensing TO-220-5 - 125W (Tc) -55°C ~ 150°C (TJ)
IRL3714ZL

IRL3714ZL

MOSFET N-CH 20V 36A TO262

Infineon Technologies

4,262 -
IRL3714ZL

数据表

HEXFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 36A (Tc) 4.5V, 10V 16mOhm @ 15A, 10V Through Hole 2.55V @ 250µA 7.2 nC @ 4.5 V 20 V ±20V 550 pF @ 10 V - - TO-262 - 35W (Tc) -55°C ~ 175°C (TJ)
FDPF44N25TRDTU

FDPF44N25TRDTU

MOSFET N-CH 250V 44A TO220F

onsemi

5,225 -
FDPF44N25TRDTU

数据表

UniFET™ TO-220-3 Full Pack, Formed Leads Tube Obsolete N-Channel MOSFET (Metal Oxide) 44A (Tc) 10V 69mOhm @ 22A, 10V Through Hole 5V @ 250µA 61 nC @ 10 V 250 V ±30V 2870 pF @ 25 V - - TO-220F (LG-Formed) - 38W (Tc) -55°C ~ 150°C (TJ)
FQPF46N15

FQPF46N15

MOSFET N-CH 150V 25.6A TO220F

onsemi

3,339 -
FQPF46N15

数据表

QFET® TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 25.6A (Tc) 10V 42mOhm @ 12.8A, 10V Through Hole 4V @ 250µA 110 nC @ 10 V 150 V ±25V 3250 pF @ 25 V - - TO-220F-3 - 66W (Tc) -55°C ~ 175°C (TJ)
SPP80N06S2L-06

SPP80N06S2L-06

MOSFET N-CH 55V 80A TO220-3

Infineon Technologies

7,020 -
SPP80N06S2L-06

数据表

OptiMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 80A (Tc) 4.5V, 10V 6.3mOhm @ 69A, 10V Through Hole 2V @ 180µA 150 nC @ 10 V 55 V ±20V 5050 pF @ 25 V - - PG-TO220-3-1 - 250W (Tc) -55°C ~ 175°C (TJ)
IRF6668TR1

IRF6668TR1

MOSFET N-CH 80V 55A DIRECTFET MZ

Infineon Technologies

7,084 -
IRF6668TR1

数据表

HEXFET® DirectFET™ Isometric MZ Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 55A (Tc) 10V 15mOhm @ 12A, 10V Surface Mount 4.9V @ 100µA 31 nC @ 10 V 80 V ±20V 1320 pF @ 25 V - - DIRECTFET™ MZ - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ)
FQA12N60

FQA12N60

MOSFET N-CH 600V 12A TO3P

onsemi

4,361 -
FQA12N60

数据表

QFET® TO-3P-3, SC-65-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 12A (Tc) 10V 700mOhm @ 6A, 10V Through Hole 5V @ 250µA 54 nC @ 10 V 600 V ±30V 1900 pF @ 25 V - - TO-3P - 240W (Tc) -55°C ~ 150°C (TJ)
HUF76639P3

HUF76639P3

MOSFET N-CH 100V 51A TO220-3

onsemi

6,555 -
HUF76639P3

数据表

UltraFET™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 51A (Tc) - 26mOhm @ 51A, 10V Through Hole 3V @ 250µA 86 nC @ 10 V 100 V - 2400 pF @ 25 V - - TO-220-3 - - -
STB12N60DM2AG

STB12N60DM2AG

DISCRETE

STMicroelectronics

9,690 -
STB12N60DM2AG

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 10A (Tc) 10V 430mOhm @ 5A, 10V Surface Mount 5V @ 250µA 14.5 nC @ 10 V 600 V ±25V 614 pF @ 100 V AEC-Q101 - TO-263 (D2PAK) Automotive 125W -55°C ~ 150°C (TJ)
STP8NM60ND

STP8NM60ND

MOSFET N-CH 600V 7A TO220-3

STMicroelectronics

2,786 -
STP8NM60ND

数据表

FDmesh™ II TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 7A (Tc) 10V 700mOhm @ 3.5A, 10V Through Hole 5V @ 250µA 22 nC @ 10 V 600 V ±30V 560 pF @ 50 V - - TO-220 - 70W (Tc) 150°C (TJ)
IRF9530STRRPBF

IRF9530STRRPBF

MOSFET P-CH 100V 12A D2PAK

Vishay Siliconix

6,862 -
IRF9530STRRPBF

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 12A (Tc) 10V 300mOhm @ 7.2A, 10V Surface Mount 4V @ 250µA 38 nC @ 10 V 100 V ±20V 860 pF @ 25 V - - TO-263 (D2PAK) - 3.7W (Ta), 88W (Tc) -55°C ~ 175°C (TJ)
STS15N4LLF3

STS15N4LLF3

MOSFET N-CH 40V 15A 8SO

STMicroelectronics

7,951 -
STS15N4LLF3

数据表

STripFET™ 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 15A (Tc) 4.5V, 10V 5mOhm @ 7.5A, 10V Surface Mount 1V @ 250µA 28 nC @ 4.5 V 40 V ±16V 2530 pF @ 25 V - - 8-SOIC - 2.7W (Tc) -55°C ~ 150°C (TJ)
TSM60NB900CH

TSM60NB900CH

600V, 4A, SINGLE N-CHANNEL POWER

Taiwan Semiconductor Corporation

9,171 -
TSM60NB900CH

数据表

- TO-251-3 Short Leads, IPAK, TO-251AA Tube Active N-Channel MOSFET (Metal Oxide) 4A (Tc) 10V 900mOhm @ 1.2A, 10V Through Hole 4V @ 250µA 9.6 nC @ 10 V 600 V ±30V 315 pF @ 100 V - - TO-251 (IPAK) - 36.8W (Tc) -55°C ~ 150°C (TJ)
TSM60NB900CP

TSM60NB900CP

600V, 4A, SINGLE N-CHANNEL POWER

Taiwan Semiconductor Corporation

4,003 -
TSM60NB900CP

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 4A (Tc) 10V 900mOhm @ 1.2A, 10V Surface Mount 4V @ 250µA 9.6 nC @ 10 V 600 V ±30V 315 pF @ 100 V - - TO-252 (DPAK) - 36.8W (Tc) -55°C ~ 150°C (TJ)
IRF7807D2TRPBF

IRF7807D2TRPBF

MOSFET N-CH 30V 8.3A 8SO

Infineon Technologies

6,500 -
IRF7807D2TRPBF

数据表

FETKY™ 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 8.3A (Ta) 4.5V 25mOhm @ 7A, 4.5V Surface Mount 1V @ 250µA 17 nC @ 5 V 30 V ±12V - - Schottky Diode (Isolated) 8-SO - 2.5W (Ta) -55°C ~ 150°C (TJ)
FDB7030BL

FDB7030BL

MOSFET N-CH 30V 60A TO263AB

onsemi

2,491 -
FDB7030BL

数据表

PowerTrench® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 60A (Ta) 4.5V, 10V 9mOhm @ 30A, 10V Surface Mount 3V @ 250µA 24 nC @ 5 V 30 V ±20V 1760 pF @ 15 V - - TO-263 (D2PAK) - 60W (Tc) -65°C ~ 175°C (TJ)
PSMN130-200D,118

PSMN130-200D,118

MOSFET N-CH 200V 20A DPAK

Nexperia USA Inc.

6,958 -
PSMN130-200D,118

数据表

TrenchMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 20A (Tc) 10V 130mOhm @ 25A, 10V Surface Mount 4V @ 1mA 65 nC @ 10 V 200 V ±20V 2470 pF @ 25 V - - DPAK - 150W (Tc) -55°C ~ 175°C (TJ)
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