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场效应晶体管（FETs）、MOSFETs

制造商	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
Alpha & Omega Semiconductor Inc. Analog Power Inc. ANBON SEMICONDUCTOR (INT'L) LIMITED APSEMI Bruckewell Cambridge GaN Devices Central Semiconductor Corp Coherent Corp Comchip Technology CoolCAD Diodes Incorporated Diotec Semiconductor EPC EPC Space, LLC EVVO Fairchild Semiconductor Fairchild/ON Semiconductor fastSiC Flip Electronics GaNPower GeneSiC Semiconductor Goford Semiconductor Good-Ark Semiconductor Harris Corporation Honeywell Aerospace HY Electronic (Cayman) Limited IceMOS Technology Infineon Technologies International Rectifier Intersil Inventchip IXYS IXYS Integrated Circuits Division Linear Integrated Systems, Inc. Littelfuse Inc. MaxLinear, Inc. MDD Meritek Micro Commercial Co Microchip Technology Microsemi Corporation Motorola National Semiconductor NEC Corporation Nexperia USA Inc. NextGen Components Group NoMIS Power NovuSem Nuvoton Technology Corporation NXP Semiconductors onsemi Panasonic - BSG Panjit International Inc. PN Junction Semiconductor Qorvo Quest Semi Rectron USA Renesas ROHM Semiconductor Sanken Electric USA Inc. Sanyo SemiQ Shenzhen Slkormicro Semicon Co., Ltd. Siemens Siliconix Skyworks Solutions Inc. SMC Diode Solutions SparkFun Electronics STMicroelectronics Taiwan Semiconductor Corporation Texas Instruments Torex Semiconductor Ltd Toshiba Semiconductor and Storage Transphorm TT Electronics/Optek Technology UMW Venkel Vicor Corporation Vishay Vishay General Semiconductor - Diodes Division Vishay Siliconix WeEn Semiconductors Wise-Integration Wolfspeed, Inc. YAGEO XSemi

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厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
AOK015V75X2Q 750V SILICON CARBIDE MOSFET Alpha & Omega Semiconductor Inc.	226	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	96A (Tc)	15V	22mOhm @ 24A, 15V	Through Hole	3.5V @ 24mA	152 nC @ 15 V	750 V	+15V, -5V	4880 pF @ 400 V	AEC-Q101	-	TO-247	Automotive	312W (Tj)	-55°C ~ 175°C (TJ)
AOM015V75X2Q 750V SILICON CARBIDE MOSFET Alpha & Omega Semiconductor Inc.	205	-	询价单	数据表	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	96A (Tc)	15V	22mOhm @ 24A, 15V	Through Hole	3.5V @ 24mA	152 nC @ 15 V	750 V	+15V, -5V	4880 pF @ 400 V	AEC-Q101	-	TO-247-4L	Automotive	312W (Tj)	-55°C ~ 175°C (TJ)
IMW65R010M2HXKSA1 IMW65R010M2HXKSA1 Infineon Technologies	396	-	询价单	数据表	CoolSiC™	TO-247-3	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	130A (Tc)	15V, 20V	9.1mOhm @ 92.1A, 20V	Through Hole	5.6V @ 18.7mA	112 nC @ 18 V	650 V	+23V, -7V	4001 pF @ 400 V	-	-	PG-TO247-3-40	-	440W (Tc)	-55°C ~ 175°C (TJ)
G3F20MT12K 1200V 20M TO-247-4 G3F SIC MOSFE GeneSiC Semiconductor	595	-	询价单	数据表	-	TO-247-4	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	-	-	-	Through Hole	-	-	1200 V	-	-	-	-	TO-247-4	-	-	-
NVHL070N120M3S SIC MOS TO247-3L 70MOHM 1200V M3 onsemi	410	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	34A (Tc)	18V	87mOhm @ 15A, 18V	Through Hole	4.4V @ 7mA	57 nC @ 18 V	1200 V	+22V, -10V	1230 pF @ 800 V	AEC-Q101	-	TO-247-3	Automotive	160W (Tc)	-55°C ~ 175°C (TJ)
S3M0016120B MOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions	300	-	询价单	数据表	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	106A (Tc)	18V	23mOhm @ 75A, 18V	Surface Mount	4V @ 30mA	287 nC @ 18 V	1200 V	+22V, -8V	5251 pF @ 1000 V	-	-	TO-263-7	-	576W (Tc)	-55°C ~ 175°C (TJ)
IMZA65R010M2HXKSA1 IMZA65R010M2HXKSA1 Infineon Technologies	400	-	询价单	数据表	CoolSiC™	TO-247-4	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	144A (Tc)	15V, 20V	9.1mOhm @ 92.1A, 20V	Through Hole	5.6V @ 18.7mA	112 nC @ 18 V	650 V	+23V, -7V	4001 pF @ 400 V	-	-	PG-TO247-4-8	-	440W (Tc)	-55°C ~ 175°C (TJ)
E4M0025075J2-TR MOSFETS 3055 PF 281W 3.8V 114 NC Wolfspeed, Inc.	524	-	询价单	数据表	E	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	84A (Tc)	15V	34mOhm @ 33.5A, 15V	Surface Mount	3.8V @ 9.22mA	114 nC @ 15 V	750 V	+19V, -8V	3055 pF @ 500 V	AEC-Q101	-	TO-263-7	Automotive	281W (Tc)	-55°C ~ 175°C (TJ)
E4M0025075K1 MOSFETS AUTOMOTIVE 262W 3.8V NC Wolfspeed, Inc.	286	-	询价单	数据表	E	TO-247-4	Bulk	Active	N-Channel	SiCFET (Silicon Carbide)	80A (Tc)	15V	34mOhm @ 33.5A, 15V	Through Hole	3.8V @ 9.22mA	119 nC @ 15 V	750 V	+19V, -8V	3055 pF @ 500 V	AEC-Q101	-	TO-247-4L	Automotive	262W (Tc)	-55°C ~ 175°C (TJ)
AIMBG120R020M1XTMA1 SIC_DISCRETE Infineon Technologies	864	-	询价单	数据表	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	104A (Tc)	18V, 20V	25mOhm @ 43A, 20V	Surface Mount	5.1V @ 15mA	82 nC @ 20 V	1200 V	+23V, -5V	2667 pF @ 800 V	AEC-Q101	-	PG-TO263-7-12	Automotive	468W (Tc)	-55°C ~ 175°C (TJ)
IMZC120R012M2HXKSA1 IMZC120R012M2HXKSA1 Infineon Technologies	215	-	询价单	数据表	CoolSiC™	TO-247-4	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	129A (Tc)	15V, 18V	12mOhm @ 57A, 18V	Through Hole	5.1V @ 17.8mA	124 nC @ 18 V	1200 V	+23V, -7V	4050 pF @ 800 V	-	-	PG-TO247-4-17	-	480W (Tc)	-55°C ~ 175°C (TJ)
NTMFS4C10NCT1G NFET SO8FL 30V 46A 6.96MO onsemi	9,229	-	询价单	数据表	-	8-PowerTDFN, 5 Leads	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	15A (Ta), 46A (Tc)	4.5V, 10V	-	Surface Mount	2.2V @ 250µA	18.6 nC @ 10 V	30 V	±20V	987 pF @ 15 V	-	-	5-DFN (5x6) (8-SOFL)	-	2.49W (Ta), 23.6W (Tc)	-55°C ~ 150°C (TJ)
NVMFS5C410NLT3G MOSFET N-CH 40V 48A/315A 5DFN onsemi	4,375	-	询价单	数据表	-	8-PowerTDFN, 5 Leads	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	48A (Ta), 315A (Tc)	4.5V, 10V	0.9mOhm @ 50A, 10V	Surface Mount	2V @ 250µA	143 nC @ 10 V	40 V	±20V	8862 pF @ 25 V	AEC-Q101	-	5-DFN (5x6) (8-SOFL)	Automotive	3.8W (Ta), 167W (Tc)	-55°C ~ 175°C (TJ)
IPD70N10S312ATMA2 MOSFET_(75V 120V( Infineon Technologies	8,185	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	70A (Tc)	10V	11.1mOhm @ 70A, 10V	Surface Mount	4V @ 83µA	65 nC @ 10 V	100 V	±20V	4355 pF @ 25 V	AEC-Q101	-	PG-TO252-3-11	Automotive	125W (Tc)	-55°C ~ 175°C (TJ)
IRL510L MOSFET N-CH 100V 5.6A TO262-3 Vishay Siliconix	9,804	-	询价单	数据表	-	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	5.6A (Tc)	4V, 5V	540mOhm @ 3.4A, 5V	Through Hole	2V @ 250µA	6.1 nC @ 5 V	100 V	±10V	250 pF @ 25 V	-	-	TO-262-3	-	-	-55°C ~ 175°C (TJ)
STP14NK60Z MOSFET N-CH 600V 13.5A TO220AB STMicroelectronics	6,463	-	询价单	数据表	SuperMESH™	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	13.5A (Tc)	10V	500mOhm @ 6A, 10V	Through Hole	4.5V @ 100µA	75 nC @ 10 V	600 V	±30V	2220 pF @ 25 V	-	-	TO-220	-	160W (Tc)	-55°C ~ 150°C (TJ)
STP6NK70Z MOSFET N-CH 700V 5A TO220AB STMicroelectronics	8,905	-	询价单	数据表	SuperMESH™	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	5A (Tc)	10V	1.8Ohm @ 2.5A, 10V	Through Hole	4.5V @ 100µA	47 nC @ 10 V	700 V	±30V	930 pF @ 25 V	-	-	TO-220	-	110W (Tc)	-55°C ~ 150°C (TJ)
STP6NC60 MOSFET N-CH 600V 6A TO220AB STMicroelectronics	7,134	-	询价单	数据表	PowerMESH™ II	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	6A (Tc)	10V	1.2Ohm @ 3A, 10V	Through Hole	4V @ 250µA	45.5 nC @ 10 V	600 V	±30V	1020 pF @ 25 V	-	-	TO-220	-	125W (Tc)	150°C (TJ)
STF8NM60N MOSFET N-CH 600V 7A TO220FP STMicroelectronics	6,957	-	询价单	数据表	MDmesh™ II	TO-220-3 Full Pack	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	7A (Tc)	10V	650mOhm @ 3.5A, 10V	Through Hole	4V @ 250µA	19 nC @ 10 V	600 V	±25V	560 pF @ 50 V	-	-	TO-220FP	-	25W (Tc)	-55°C ~ 150°C (TJ)
IRF9530NSTRR MOSFET P-CH 100V 14A D2PAK Infineon Technologies	3,381	-	询价单	数据表	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	14A (Tc)	10V	200mOhm @ 8.4A, 10V	Surface Mount	4V @ 250µA	58 nC @ 10 V	100 V	±20V	760 pF @ 25 V	-	-	D2PAK	-	3.8W (Ta), 79W (Tc)	-55°C ~ 175°C (TJ)

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