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场效应晶体管（FETs）、MOSFETs

制造商	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
Alpha & Omega Semiconductor Inc. Analog Power Inc. ANBON SEMICONDUCTOR (INT'L) LIMITED APSEMI Bruckewell Cambridge GaN Devices Central Semiconductor Corp Coherent Corp Comchip Technology CoolCAD Diodes Incorporated Diotec Semiconductor EPC EPC Space, LLC EVVO Fairchild Semiconductor Fairchild/ON Semiconductor fastSiC Flip Electronics GaNPower GeneSiC Semiconductor Goford Semiconductor Good-Ark Semiconductor Harris Corporation Honeywell Aerospace HY Electronic (Cayman) Limited IceMOS Technology Infineon Technologies International Rectifier Intersil Inventchip IXYS IXYS Integrated Circuits Division Linear Integrated Systems, Inc. Littelfuse Inc. MaxLinear, Inc. MDD Meritek Micro Commercial Co Microchip Technology Microsemi Corporation Motorola National Semiconductor NEC Corporation Nexperia USA Inc. NextGen Components Group NoMIS Power NovuSem Nuvoton Technology Corporation NXP Semiconductors onsemi Panasonic - BSG Panjit International Inc. PN Junction Semiconductor Qorvo Quest Semi Rectron USA Renesas ROHM Semiconductor Sanken Electric USA Inc. Sanyo SemiQ Shenzhen Slkormicro Semicon Co., Ltd. Siemens Siliconix Skyworks Solutions Inc. SMC Diode Solutions SparkFun Electronics STMicroelectronics Taiwan Semiconductor Corporation Texas Instruments Torex Semiconductor Ltd Toshiba Semiconductor and Storage Transphorm TT Electronics/Optek Technology UMW Venkel Vicor Corporation Vishay Vishay General Semiconductor - Diodes Division Vishay Siliconix WeEn Semiconductors Wise-Integration Wolfspeed, Inc. YAGEO XSemi

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厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
SPP12N50C3HKSA1 MOSFET N-CH 560V 11.6A TO220-3 Infineon Technologies	2,038	-	询价单	数据表	CoolMOS™	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	11.6A (Tc)	10V	380mOhm @ 7A, 10V	Through Hole	3.9V @ 500µA	49 nC @ 10 V	560 V	±20V	1200 pF @ 25 V	-	-	PG-TO220-3-1	-	125W (Tc)	-55°C ~ 150°C (TJ)
64-9144 MOSFET N-CH 30V 14A DIRECTFET Infineon Technologies	6,047	-	询价单	数据表	HEXFET®	DirectFET™ Isometric ST	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	14A (Ta), 55A (Tc)	4.5V, 10V	8.1mOhm @ 15A, 10V	Surface Mount	2.35V @ 250µA	17 nC @ 4.5 V	30 V	±20V	1300 pF @ 15 V	-	-	DIRECTFET™ ST	-	2.1W (Ta), 42W (Tc)	-40°C ~ 150°C (TJ)
IRF820L MOSFET N-CH 500V 2.5A I2PAK Vishay Siliconix	6,120	-	询价单	数据表	-	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	2.5A (Tc)	10V	3Ohm @ 1.5A, 10V	Through Hole	4V @ 250µA	24 nC @ 10 V	500 V	±20V	360 pF @ 25 V	-	-	I2PAK	-	3.1W (Ta), 50W (Tc)	-55°C ~ 150°C (TJ)
RFP70N03 MOSFET N-CH 30V 70A TO220-3 onsemi	2,462	-	询价单	数据表	-	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	70A (Tc)	-	10mOhm @ 70A, 10V	Through Hole	4V @ 250µA	260 nC @ 20 V	30 V	-	3300 pF @ 25 V	-	-	TO-220-3	-	-	-
PSMN2R8-40PS,127 MOSFET N-CH 40V 100A TO220AB Nexperia USA Inc.	7,951	-	询价单	数据表	-	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	100A (Tc)	10V	2.8mOhm @ 10A, 10V	Through Hole	4V @ 1mA	71 nC @ 10 V	40 V	±20V	4491 pF @ 20 V	-	-	TO-220AB	-	211W (Tc)	-55°C ~ 175°C (TJ)
SPP07N65C3HKSA1 MOSFET N-CH 650V 7.3A TO220-3 Infineon Technologies	6,367	-	询价单	数据表	CoolMOS™	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	7.3A (Tc)	10V	600mOhm @ 4.6A, 10V	Through Hole	3.9V @ 350µA	27 nC @ 10 V	650 V	±20V	790 pF @ 25 V	-	-	PG-TO220-3-1	-	83W (Tc)	-55°C ~ 150°C (TJ)
AOB66919L N Alpha & Omega Semiconductor Inc.	5,982	-	询价单	数据表	AlphaSGT™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	26A (Ta), 105A (Tc)	4.5V, 10V	6.5mOhm @ 20A, 10V	Surface Mount	2.6V @ 250µA	66 nC @ 10 V	100 V	±20V	3420 pF @ 50 V	-	-	TO-263 (D2PAK)	-	10W (Ta), 187W (Tc)	-55°C ~ 175°C (TJ)
IPP070N06N G MOSFET N-CH 60V 80A TO220-3 Infineon Technologies	8,809	-	询价单	数据表	OptiMOS™	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	80A (Tc)	10V	7mOhm @ 80A, 10V	Through Hole	4V @ 180µA	118 nC @ 10 V	60 V	±20V	4100 pF @ 30 V	-	-	PG-TO220-3	-	250W (Tc)	-55°C ~ 175°C (TJ)
NP60N06PDK-E1-AY MOSFET TRANSISTOR MORE 1 W Renesas Electronics Corporation	8,102	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	60A	4.5V, 10V	12mOhm @ 30A, 10V	Surface Mount	2.5V @ 250µA	56 nC @ 10 V	60 V	±20V	3600 pF @ 25 V	AEC-Q101	-	TO-263-3	Automotive	105W	150°C (TJ)
PSMN6R5-80PS,127 MOSFET N-CH 80V 100A TO220AB Nexperia USA Inc.	4,080	-	询价单	数据表	-	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	100A (Tc)	10V	6.9mOhm @ 15A, 10V	Through Hole	4V @ 1mA	71 nC @ 10 V	80 V	±20V	4461 pF @ 40 V	-	-	TO-220AB	-	210W (Tc)	-55°C ~ 175°C (TJ)
APT1201R2BFLLG MOSFET N-CH 1200V 12A TO247 Microchip Technology	274	-	询价单	数据表	POWER MOS 7®	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	12A (Tc)	-	1.25Ohm @ 6A, 10V	Through Hole	5V @ 1mA	100 nC @ 10 V	1200 V	-	2540 pF @ 25 V	-	-	TO-247 [B]	-	-	-
IXFX32N80Q3 MOSFET N-CH 800V 32A PLUS247-3 Littelfuse Inc.	600	-	询价单	数据表	HiPerFET™, Q3 Class	TO-247-3 Variant	Tube	Active	N-Channel	MOSFET (Metal Oxide)	32A (Tc)	10V	270mOhm @ 16A, 10V	Through Hole	6.5V @ 4mA	140 nC @ 10 V	800 V	±30V	6940 pF @ 25 V	-	-	PLUS247™-3	-	1000W (Tc)	-55°C ~ 150°C (TJ)
G3F18MT12J-TR 1200V 18M TO-263-7 G3F SIC MOSFE GeneSiC Semiconductor	800	-	询价单	数据表	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	122A (Tc)	18V	25mOhm @ 45A, 18V	Surface Mount	4.3V @ 35mA	212 nC @ 18 V	1200 V	+22V, -10V	4962 pF @ 800 V	AEC-Q101	-	TO-263-7	Automotive	526W (Tc)	-55°C ~ 175°C (TJ)
C3M0021120K1 MOSFET N-CH 1200V 104A TO247-4L Wolfspeed, Inc.	869	-	询价单	数据表	-	TO-247-4	Bulk	Active	N-Channel	SiCFET (Silicon Carbide)	104A (Tc)	15V	29mOhm @ 62.1A, 15V	Through Hole	3.8V @ 17.1mA	177 nC @ 15 V	1200 V	+19V, -8V	5100 pF @ 1000 V	-	-	TO-247-4L	-	405W (Tc)	-55°C ~ 175°C (TJ)
AOM020V120X2Q 1200V SILICON CARBIDE MOSFET Alpha & Omega Semiconductor Inc.	217	-	询价单	数据表	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	89A (Tc)	15V	28mOhm @ 27A, 15V	Through Hole	2.8V @ 27mA	166 nC @ 15 V	1200 V	+15V, -5V	5180 pF @ 800 V	AEC-Q101	-	TO-247-4L	Automotive	348W (Tc)	-55°C ~ 175°C (TJ)
TW030Z120C,S1F G3 1200V SIC-MOSFET TO-247-4L 3 Toshiba Semiconductor and Storage	105	-	询价单	数据表	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	60A (Tc)	18V	41mOhm @ 30A, 18V	Through Hole	5V @ 13mA	82 nC @ 18 V	1200 V	+25V, -10V	2925 pF @ 800 V	-	-	TO-247-4L(X)	-	249W (Tc)	175°C
G3F18MT12K 1200V 18M TO-247-4 G3F SIC MOSFE GeneSiC Semiconductor	595	-	询价单	数据表	-	-	Tube	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
E3M0032120J2-TR 32m, 1200V SiC FET, TO-263-7 XL Wolfspeed, Inc.	729	-	询价单	数据表	E	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	74A (Tc)	15V	43mOhm @ 38.9A, 15V	Surface Mount	3.8V @ 10.7mA	108 nC @ 15 V	1200 V	+19V, -8V	3460 pF @ 1000 V	AEC-Q101	-	TO-263-7	Automotive	341W (Tc)	-55°C ~ 175°C (TJ)
SCTH100N65G2-7AG SICFET N-CH 650V 95A H2PAK-7 STMicroelectronics	876	-	询价单	数据表	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	95A (Tc)	18V	26mOhm @ 50A, 18V	Surface Mount	5V @ 5mA	162 nC @ 18 V	650 V	+22V, -10V	3315 pF @ 520 V	AEC-Q101	-	H2PAK-7	Automotive	360W (Tc)	-55°C ~ 175°C (TJ)
C3M0025065J1-TR SIC, MOSFET 25 M, 650V TO-263-7X Wolfspeed, Inc.	780	-	询价单	数据表	C3M™	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	80A (Tc)	15V	34mOhm @ 33.5A, 15V	Surface Mount	3.6V @ 9.22mA	109 nC @ 15 V	650 V	+19V, -8V	2980 pF @ 400 V	-	-	TO-263-7	-	271W (Tc)	-40°C ~ 150°C (TJ)

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