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场效应晶体管（FETs）、MOSFETs

制造商	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
Alpha & Omega Semiconductor Inc. Analog Power Inc. ANBON SEMICONDUCTOR (INT'L) LIMITED APSEMI Bruckewell Cambridge GaN Devices Central Semiconductor Corp Coherent Corp Comchip Technology CoolCAD Diodes Incorporated Diotec Semiconductor EPC EPC Space, LLC EVVO Fairchild Semiconductor Fairchild/ON Semiconductor fastSiC Flip Electronics GaNPower GeneSiC Semiconductor Goford Semiconductor Good-Ark Semiconductor Harris Corporation Honeywell Aerospace HY Electronic (Cayman) Limited IceMOS Technology Infineon Technologies International Rectifier Intersil Inventchip IXYS IXYS Integrated Circuits Division Linear Integrated Systems, Inc. Littelfuse Inc. MaxLinear, Inc. MDD Meritek Micro Commercial Co Microchip Technology Microsemi Corporation Motorola National Semiconductor NEC Corporation Nexperia USA Inc. NextGen Components Group NoMIS Power NovuSem Nuvoton Technology Corporation NXP Semiconductors onsemi Panasonic - BSG Panjit International Inc. PN Junction Semiconductor Qorvo Quest Semi Rectron USA Renesas ROHM Semiconductor Sanken Electric USA Inc. Sanyo SemiQ Shenzhen Slkormicro Semicon Co., Ltd. Siemens Siliconix Skyworks Solutions Inc. SMC Diode Solutions SparkFun Electronics STMicroelectronics Taiwan Semiconductor Corporation Texas Instruments Torex Semiconductor Ltd Toshiba Semiconductor and Storage Transphorm TT Electronics/Optek Technology UMW Venkel Vicor Corporation Vishay Vishay General Semiconductor - Diodes Division Vishay Siliconix WeEn Semiconductors Wise-Integration Wolfspeed, Inc. YAGEO XSemi

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厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
NVHL015N065SC1 SIC MOS TO247-3L 650V onsemi	447	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	163A (Tc)	15V, 18V	18mOhm @ 75A, 12V	Through Hole	4.3V @ 25mA	283 nC @ 18 V	650 V	+22V, -8V	4790 pF @ 325 V	AEC-Q101	-	TO-247-3	Automotive	643W (Tc)	-55°C ~ 175°C (TJ)
E3M0021120J2-TR 21m, 1200V SiC FET, TO-263-7 XL Wolfspeed, Inc.	488	-	询价单	数据表	E	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	114A (Tc)	15V	29mOhm @ 62.12A, 15V	Surface Mount	3.8V @ 17.1mA	169 nC @ 15 V	1200 V	+19V, -8V	5100 pF @ 1000 V	AEC-Q101	-	TO-263-7	Automotive	500W (Tc)	-55°C ~ 175°C (TJ)
AIMZA75R008M1HXKSA1 AUTOMOTIVE_SICMOS Infineon Technologies	240	-	询价单	数据表	CoolSiC™	TO-247-4	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	163A (Tc)	15V, 20V	7.2mOhm @ 90.3A, 20V	Through Hole	5.6V @ 32.4mA	178 nC @ 18 V	750 V	+23V, -5V	6137 pF @ 500 V	AEC-Q101	-	PG-TO247-4-U02	Automotive	517W (Tc)	-55°C ~ 175°C (TJ)
IMZA75R008M1HXKSA1 SILICON CARBIDE MOSFET Infineon Technologies	240	-	询价单	数据表	CoolSiC™	TO-247-4	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	163A (Tc)	15V, 20V	7.2mOhm @ 90.3A, 20V	Through Hole	5.6V @ 32.4mA	178 nC @ 500 V	750 V	+23V, -5V	6137 pF @ 500 V	-	-	PG-TO247-4-U02	-	517W (Tc)	-55°C ~ 175°C (TJ)
NCV81342CBATXG MOSFET onsemi	1,000	-	询价单	数据表	-	-	Tape & Reel (TR)	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPD030N03LF2SATMA1 MOSFET N-CH 30V 160A DPAK Infineon Technologies	2,000	-	询价单	数据表	StrongIRFET™	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	24A (Ta), 99A (Tc)	4.5V, 10V	3.05mOhm @ 60A, 10V	Surface Mount	2.35V @ 40µA	50 nC @ 10 V	30 V	±20V	2200 pF @ 15 V	-	-	PG-TO252-3-34	-	3W (Ta), 83W (Tc)	-55°C ~ 175°C (TJ)
IRF6636 MOSFET N-CH 20V 18A DIRECTFET Infineon Technologies	2,098	-	询价单	数据表	HEXFET®	DirectFET™ Isometric ST	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	18A (Ta), 81A (Tc)	4.5V, 10V	4.5mOhm @ 18A, 10V	Surface Mount	2.45V @ 250µA	27 nC @ 4.5 V	20 V	±20V	2420 pF @ 10 V	-	-	DIRECTFET™ ST	-	2.2W (Ta), 42W (Tc)	-40°C ~ 150°C (TJ)
2SK303000L MOSFET N-CH 100V 8A U-G1 Panasonic Electronic Components	4,251	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	8A (Tc)	4V, 10V	230mOhm @ 4A, 10V	Surface Mount	2.5V @ 1mA	-	100 V	±20V	290 pF @ 10 V	-	-	U-G1	-	1W (Ta), 15W (Tc)	150°C (TJ)
APT60M75L2FLLG MOSFET N-CH 600V 73A 264 MAX Microchip Technology	82	-	询价单	数据表	POWER MOS 7®	TO-264-3, TO-264AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	73A (Tc)	10V	75mOhm @ 36.5A, 10V	Through Hole	5V @ 5mA	195 nC @ 10 V	600 V	±30V	8930 pF @ 25 V	-	-	264 MAX™ [L2]	-	893W (Tc)	-55°C ~ 150°C (TJ)
C3M0016120K1 MOSFET N-CH 1200V 125A TO247-4L Wolfspeed, Inc.	325	-	询价单	数据表	-	TO-247-4	Bulk	Active	N-Channel	SiCFET (Silicon Carbide)	125A (Tc)	15V	22mOhm @ 80.28A, 15V	Through Hole	3.8V @ 22.08mA	223 nC @ 15 V	1200 V	+19V, -8V	6922 pF @ 1000 V	-	-	TO-247-4L	-	483W (Tc)	-55°C ~ 175°C (TJ)
FDMS8692 MOSFET N-CH 30V 12A/28A 8PQFN onsemi	4,959	-	询价单	数据表	PowerTrench®	8-PowerTDFN	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	12A (Ta), 28A (Tc)	4.5V, 10V	9mOhm @ 12A, 10V	Surface Mount	3V @ 250µA	21 nC @ 10 V	30 V	±20V	1265 pF @ 15 V	-	-	8-PQFN (5x6)	-	2.5W (Ta), 41W (Tc)	-55°C ~ 150°C (TJ)
APL502B2G MOSFET N-CH 500V 58A T-MAX Microchip Technology	106	-	询价单	数据表	-	TO-247-3 Variant	Tube	Active	N-Channel	MOSFET (Metal Oxide)	58A (Tc)	15V	90mOhm @ 29A, 12V	Through Hole	4V @ 2.5mA	-	500 V	±30V	9000 pF @ 25 V	-	-	T-MAX™ [B2]	-	730W (Tc)	-55°C ~ 150°C (TJ)
FDMS8674 MOSFET N-CH 30V 17A/21A 8PQFN onsemi	2,045	-	询价单	数据表	PowerTrench®	8-PowerTDFN	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	17A (Ta), 21A (Tc)	4.5V, 10V	5mOhm @ 17A, 10V	Surface Mount	3V @ 250µA	37 nC @ 10 V	30 V	±20V	2320 pF @ 15 V	-	-	8-PQFN (5x6)	-	2.5W (Ta), 78W (Tc)	-55°C ~ 150°C (TJ)
BSZ100N03LSGATMA1 MOSFET N-CH 30V 12A/40A 8TSDSON Infineon Technologies	9,347	-	询价单	数据表	OptiMOS™	8-PowerTDFN	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	12A (Ta), 40A (Tc)	4.5V, 10V	10mOhm @ 20A, 10V	Surface Mount	2.2V @ 250µA	17 nC @ 10 V	30 V	±20V	1500 pF @ 15 V	-	-	PG-TSDSON-8	-	2.1W (Ta), 30W (Tc)	-55°C ~ 150°C (TJ)
DIW120SIC022-AQ SIC MOSFET, TO-247-3L, N, 120A, Diotec Semiconductor	150	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	120A (Tc)	18V	22.3mOhm @ 75A, 18V	Through Hole	4V @ 23.5mA	269 nC @ 18 V	1200 V	+18V, -4V	4817 pF @ 1000 V	AEC-Q101	-	TO-247	Automotive	340W (Tc)	-55°C ~ 175°C (TJ)
SI4636DY-T1-GE3 MOSFET N-CH 30V 17A 8SO Vishay Siliconix	6,599	-	询价单	数据表	TrenchFET®	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	17A (Tc)	4.5V, 10V	8.5mOhm @ 10A, 10V	Surface Mount	2.5V @ 250µA	60 nC @ 10 V	30 V	±16V	2635 pF @ 15 V	-	-	8-SOIC	-	2.5W (Ta), 4.4W (Tc)	-55°C ~ 150°C (TJ)
BUK9Y07-30B,115 MOSFET N-CH 30V 75A LFPAK56 Nexperia USA Inc.	2,955	-	询价单	数据表	TrenchMOS™	SC-100, SOT-669	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	75A (Tc)	5V, 10V	6mOhm @ 25A, 10V	Surface Mount	2V @ 1mA	28.1 nC @ 5 V	30 V	±15V	2500 pF @ 25 V	AEC-Q101	-	LFPAK56, Power-SO8	Automotive	105W (Tc)	-55°C ~ 175°C (TJ)
DIF120SIC022-AQ SIC MOSFET, TO-247-4L, N, 120A, Diotec Semiconductor	150	-	询价单	数据表	-	TO-247-4	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	120A (Tc)	18V	22.3mOhm @ 75A, 18V	Through Hole	4V @ 23.5mA	269 nC @ 18 V	1200 V	+18V, -4V	4817 pF @ 1000 V	AEC-Q101	-	TO-247-4	Automotive	340W (Tc)	-55°C ~ 175°C (TJ)
SI4451DY-T1-E3 MOSFET P-CH 12V 10A 8SO Vishay Siliconix	8,980	-	询价单	数据表	TrenchFET®	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	10A (Ta)	1.8V, 4.5V	8.25mOhm @ 14A, 4.5V	Surface Mount	800mV @ 850µA	120 nC @ 4.5 V	12 V	±8V	-	-	-	8-SOIC	-	1.5W (Ta)	-55°C ~ 150°C (TJ)
TW015Z120C,S1F G3 1200V SIC-MOSFET TO-247-4L 1 Toshiba Semiconductor and Storage	68	-	询价单	数据表	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	100A (Tc)	18V	21mOhm @ 50A, 18V	Through Hole	5V @ 11.7mA	158 nC @ 18 V	1200 V	+25V, -10V	6000 pF @ 800 V	-	-	TO-247-4L(X)	-	431W (Tc)	175°C

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