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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
SI4451DY-T1-GE3

SI4451DY-T1-GE3

MOSFET P-CH 12V 10A 8SO

Vishay Siliconix

2,036 -
SI4451DY-T1-GE3

数据表

TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 10A (Ta) 1.8V, 4.5V 8.25mOhm @ 14A, 4.5V Surface Mount 800mV @ 850µA 120 nC @ 4.5 V 12 V ±8V - - - 8-SOIC - 1.5W (Ta) -55°C ~ 150°C (TJ)
RSY500N04FRATL

RSY500N04FRATL

MOSFET N-CH 40V 50A TCPT3

Rohm Semiconductor

5,238 -
RSY500N04FRATL

数据表

- - Tape & Reel (TR) Obsolete - - - - - - - - - - - - - - - - -
IXFN55N120SK

IXFN55N120SK

SIC AND MULTICHIP DISCRETE

IXYS

182 -
IXFN55N120SK

数据表

- SOT-227-4, miniBLOC Tube Active N-Channel SiCFET (Silicon Carbide) 54A (Tc) 15V 42mOhm @ 40A, 15V Chassis Mount 3.6V @ 12mA 107 nC @ 15 V 1200 V +15V, -4V 3360 pF @ 1000 V - - SOT-227B - - -40°C ~ 150°C (TJ)
RSR020P05TL

RSR020P05TL

MOSFET P-CH 45V 2A TSMT3

Rohm Semiconductor

2,083 -
RSR020P05TL

数据表

- SC-96 Tape & Reel (TR) Last Time Buy P-Channel MOSFET (Metal Oxide) 2A (Ta) 4V, 10V 190mOhm @ 2A, 10V Surface Mount 3V @ 1mA 4.5 nC @ 4.5 V 45 V ±20V 500 pF @ 10 V - - TSMT3 - 540mW (Ta) 150°C (TJ)
IRFH4226TRPBF

IRFH4226TRPBF

MOSFET N-CH 25V 30A/70A 8PQFN

Infineon Technologies

8,702 -
IRFH4226TRPBF

数据表

FASTIRFET™, HEXFET® 8-PowerTDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30A (Ta), 70A (Tc) 4.5V, 10V 2.4mOhm @ 30A, 10V Surface Mount 2.1V @ 50µA 32 nC @ 10 V 25 V ±20V 2000 pF @ 13 V - - 8-PQFN (5x6) - 3.4W (Ta), 46W (Tc) -55°C ~ 150°C (TJ)
BSP129H6906XTSA1

BSP129H6906XTSA1

MOSFET N-CH 240V 350MA SOT223-4

Infineon Technologies

3,261 -
BSP129H6906XTSA1

数据表

SIPMOS™ TO-261-4, TO-261AA Tape & Reel (TR) Obsolete N-Channel, Depletion Mode MOSFET (Metal Oxide) 350mA (Ta) 0V, 10V 6Ohm @ 350mA, 10V Surface Mount 1V @ 108µA 5.7 nC @ 5 V 240 V ±20V 108 pF @ 25 V - - PG-SOT223-4 - 1.8W (Ta) -55°C ~ 150°C (TJ)
BSZ0702LSATMA1

BSZ0702LSATMA1

MOSFET N-CH 60V 17A/40A TSDSON

Infineon Technologies

4,198 -
BSZ0702LSATMA1

数据表

OptiMOS™ 8-PowerTDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 17A (Ta), 40A (Tc) 4.5V, 10V 4mOhm @ 20A, 10V Surface Mount 2.3V @ 36µA 22 nC @ 4.5 V 60 V ±20V 3100 pF @ 30 V - - PG-TDSON-8 FL - 2.1W (Ta), 69W (Tc) -55°C ~ 150°C (TJ)
TSM5NC50CZ

TSM5NC50CZ

500V, 5A, SINGLE N-CHANNEL POWE

Taiwan Semiconductor Corporation

9,211 -
TSM5NC50CZ

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 5A (Tc) 10V 1.38Ohm @ 2.5A, 10V Through Hole 4.5V @ 250µA 15 nC @ 10 V 500 V ±30V 586 pF @ 50 V - - TO-220 - 89W (Tc) -55°C ~ 150°C (TJ)
MCP70N15Y-BP

MCP70N15Y-BP

MOSFET

Micro Commercial Co

7,460 -
MCP70N15Y-BP

数据表

- TO-220-3 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 70A (Tc) 6V, 10V 20mOhm @ 20A, 10V Through Hole 4V @ 250µA 38 nC @ 10 V 150 V ±20V 2508 pF @ 75 V - - TO-220AB (H) - 150W (Tj) -55°C ~ 175°C (TJ)
2SK3793-AZ

2SK3793-AZ

MOSFET N-CH 100V 12A TO220

Renesas Electronics Corporation

7,665 -
2SK3793-AZ

数据表

- TO-220-3 Isolated Tab Bulk Obsolete N-Channel MOSFET (Metal Oxide) 12A (Tc) 4.5V, 10V 125mOhm @ 6A, 10V Through Hole - 21 nC @ 10 V 100 V ±20V 900 pF @ 10 V - - TO-220 Isolated Tab - 2W (Ta), 20W (Tc) 150°C (TJ)
IQE057N10NM6CGATMA1

IQE057N10NM6CGATMA1

TRENCH >=100V

Infineon Technologies

5,949 -
IQE057N10NM6CGATMA1

数据表

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
IXFY5N50P3

IXFY5N50P3

MOSFET N-CH 500V 5A TO252

IXYS

4,750 -
IXFY5N50P3

数据表

HiPerFET™, Polar3™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Obsolete N-Channel MOSFET (Metal Oxide) 5A (Tc) 10V 1.65Ohm @ 2.5A, 10V Surface Mount 5V @ 1mA 6.9 nC @ 10 V 500 V ±30V 370 pF @ 25 V - - TO-252AA - 114W (Tc) -55°C ~ 150°C (TJ)
AUIRFR4104TRL

AUIRFR4104TRL

MOSFET N-CH 40V 42A DPAK

Infineon Technologies

3,905 -
AUIRFR4104TRL

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Last Time Buy N-Channel MOSFET (Metal Oxide) 42A (Tc) - 5.5mOhm @ 42A, 10V Surface Mount 4V @ 250µA 89 nC @ 10 V 40 V - 2950 pF @ 25 V - - TO-252AA (DPAK) - 140W (Tc) -55°C ~ 175°C (TJ)
AUIRLR2905ZTRL

AUIRLR2905ZTRL

MOSFET N-CH 55V 42A DPAK

Infineon Technologies

3,273 -
AUIRLR2905ZTRL

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 42A (Tc) - 13.5mOhm @ 36A, 10V Surface Mount 3V @ 250µA 35 nC @ 5 V 55 V - 1570 pF @ 25 V - - TO-252AA (DPAK) - 110W (Tc) -55°C ~ 175°C (TJ)
IPP100P03P3L-04

IPP100P03P3L-04

MOSFET P-CH 30V 100A TO220-3

Infineon Technologies

2,649 -
IPP100P03P3L-04

数据表

OptiMOS™ TO-220-3 Tube Obsolete P-Channel MOSFET (Metal Oxide) 100A (Tc) 4.5V, 10V 4.3mOhm @ 80A, 10V Through Hole 2.1V @ 475µA 200 nC @ 10 V 30 V +5V, -16V 9300 pF @ 25 V - - PG-TO220-3-1 - 200W (Tc) -55°C ~ 175°C (TJ)
IRF510L

IRF510L

MOSFET N-CH 100V 5.6A TO262-3

Vishay Siliconix

9,429 -
IRF510L

数据表

- TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 5.6A (Tc) - 540mOhm @ 3.4A, 10V Through Hole 4V @ 250µA 8.3 nC @ 10 V 100 V - 180 pF @ 25 V - - TO-262-3 - - -55°C ~ 175°C (TJ)
PSMN2R0-30PL,127

PSMN2R0-30PL,127

MOSFET N-CH 30V 100A TO220AB

Nexperia USA Inc.

5,200 -
PSMN2R0-30PL,127

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 100A (Tc) 4.5V, 10V 2.1mOhm @ 15A, 10V Through Hole 2.15V @ 1mA 117 nC @ 10 V 30 V ±20V 6810 pF @ 12 V - - TO-220AB - 211W (Tc) -55°C ~ 175°C (TJ)
IRF6608TR1

IRF6608TR1

MOSFET N-CH 30V 13A DIRECTFET

Infineon Technologies

3,712 -
IRF6608TR1

数据表

HEXFET® DirectFET™ Isometric ST Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 13A (Ta), 55A (Tc) 4.5V, 10V 9mOhm @ 13A, 10V Surface Mount 3V @ 250µA 24 nC @ 4.5 V 30 V ±12V 2120 pF @ 15 V - - DIRECTFET™ ST - 2.1W (Ta), 42W (Tc) -40°C ~ 150°C (TJ)
DIW120SIC023-AQ

DIW120SIC023-AQ

MOSFET TO-247-3L N 130A 1200V

Diotec Semiconductor

705 -
DIW120SIC023-AQ

数据表

- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 125A (Tc) 18V 23mOhm @ 75A, 18V Through Hole 2.9V @ 250µA 45 nC @ 18 V 1200 V - 6150 pF @ 1000 V AEC-Q101 - TO-247 Automotive 600W (Tc) -55°C ~ 175°C (TJ)
DF17MR12W1M1HFB68BPSA1

DF17MR12W1M1HFB68BPSA1

LOW POWER EASY

Infineon Technologies

33 -
DF17MR12W1M1HFB68BPSA1

数据表

EasyPACK™ Module Tray Active N-Channel SiCFET (Silicon Carbide) 45A (Tj) 15V, 18V 16.2mOhm @ 50A, 18V Chassis Mount 5.15V @ 20mA 149 nC @ 18 V 1200 V +20V, -7V 4400 pF @ 800 V - - - - - -40°C ~ 175°C (TJ)
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