富聪科技订单满¥1000免运费
关注我们:

场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

全部重置
全部应用
结果
图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
G3035

G3035

MOSFET P-CH 30V 4.6A SOT-23

Goford Semiconductor

117,000 -
G3035

数据表

TrenchFET® TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 4.6A (Tc) 4.5V, 10V 59mOhm @ 4A, 10V Surface Mount 2V @ 250µA - - ±20V - - - SOT-23-3 - 1.4W (Tc) -55°C ~ 150°C (TJ)
G2312

G2312

MOSFET N-CH 20V 5A SOT-23

Goford Semiconductor

75,000 -
G2312

数据表

TrenchFET® TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 5A (Tc) 4.5V, 10V 18mOhm @ 4.2A, 10V Surface Mount 1V @ 250µA - - ±12V - - - SOT-23-3 - 1.25W (Tc) -55°C ~ 150°C (TJ)
3401

3401

MOSFET P-CH 30V 4.2A SOT-23

Goford Semiconductor

15,000 -
3401

数据表

TrenchFET® TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 4.2A (Tc) 4.5V, 10V 55mOhm @ 4A, 10V Surface Mount 1.3V @ 250µA - - ±12V - - - SOT-23-3 - 1.2W (Tc) -55°C ~ 150°C (TJ)
G02P06

G02P06

MOSFET P-CH 60V 1.6A,SOT-23

Goford Semiconductor

45,000 -
G02P06

数据表

TrenchFET® TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 1.6A (Tc) 4.5V, 10V 190mOhm @ 1A, 10V Surface Mount 2.5V @ 250µA - - ±20V - - - SOT-23-3 - 1.5W (Tc) -55°C ~ 150°C (TJ)
PMZB1200UPEYL

PMZB1200UPEYL

NEXPERIA PMZB1200U - 30V, P-CHAN

NXP Semiconductors

594,000 -
PMZB1200UPEYL

数据表

- 3-XFDFN Bulk Active P-Channel MOSFET (Metal Oxide) 410mA (Ta) 1.5V, 4.5V 1.4Ohm @ 410mA, 4.5V Surface Mount 950mV @ 250µA 1.2 nC @ 4.5 V 30 V ±8V 43.2 pF @ 15 V - - DFN1006B-3 - 310mW (Ta), 1.67W (Tc) -55°C ~ 150°C (TJ)
FDV301N-F169

FDV301N-F169

MOSFET N-CH 25V 220MA SOT23

onsemi

9,099 -
FDV301N-F169

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 220mA (Ta) 2.7V, 4.5V 4Ohm @ 400mA, 4.5V Surface Mount 1.06V @ 250µA 0.7 nC @ 4.5 V 25 V ±8V 9.5 pF @ 10 V - - SOT-23-3 - 350mW (Ta) -55°C ~ 150°C (TJ)
PMV100XPEA215

PMV100XPEA215

NEXPERIA PMV100 - P-CHANNEL MOSF

NXP Semiconductors

39,000 -
PMV100XPEA215

数据表

- TO-236-3, SC-59, SOT-23-3 Bulk Active P-Channel MOSFET (Metal Oxide) 2.4A (Ta) - 128mOhm @ 2.4A, 4.5V Surface Mount 1.25V @ 250µA 6 nC @ 4.5 V 20 V ±12V 386 pF @ 10 V - - SOT-23 - 463mW (Ta), 4.45W (Tc) -55°C ~ 150°C (TJ)
BSS119NH7796

BSS119NH7796

SMALL SIGNAL N-CHANNEL MOSFET

Infineon Technologies

10,000 -
BSS119NH7796

数据表

OptiMOS™ TO-236-3, SC-59, SOT-23-3 Bulk Active N-Channel MOSFET (Metal Oxide) 190mA (Ta) 4.5V, 10V 6Ohm @ 190mA, 10V Surface Mount 2.3V @ 13µA 0.6 nC @ 10 V 100 V ±20V 20.9 pF @ 25 V - - PG-SOT23-3-5 - 500mW (Ta) -55°C ~ 150°C (TJ)
BSS84

BSS84

MOSFET SOT-23 P Channel 50V

MDD

237,000 -
BSS84

数据表

SOT-23 TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 130mA (Ta) 5V, 10V 8Ohm @ 100mA, 10V Surface Mount 2V @ 250µA 1.77 nC @ 10 V 50 V ±20V 30 pF @ 5 V - - SOT-23-3 - 225mW (Ta) -55°C ~ 150°C
GT6K2P10IH

GT6K2P10IH

MOSFET P-CH 100V 1A SOT-23

Goford Semiconductor

30,000 -
GT6K2P10IH

数据表

SGT TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 1A (Tc) 10V 670mOhm @ 1A, 10V Surface Mount 3V @ 250µA - - ±20V - - - SOT-23-3 - 1.4W (Tc) -55°C ~ 150°C (TJ)
AO3400-5.8A

AO3400-5.8A

MOSFET SOT-23 N Channel 30V

MDD

234,000 -
AO3400-5.8A

数据表

SOT-23 TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 5.8A (Ta) 3.3V, 4.5V 32mOhm @ 5.8A, 10V Surface Mount 1.2V @ 250µA 10.5 nC @ 15 V 30 V ±12V 630 pF @ 15 V - - SOT-23 - 1.5W (Ta) -55°C ~ 150°C (TJ)
3LN04SS-TL-H

3LN04SS-TL-H

MOSFET N-CH

onsemi

5,888,000 -
3LN04SS-TL-H

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
MCH6307-G-TL-E

MCH6307-G-TL-E

PCH 1.8V DRIVE SERIES

onsemi

1,515,000 -
MCH6307-G-TL-E

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
PMG85XP,115

PMG85XP,115

NOW NEXPERIA PMG85XP - SMALL SIG

NXP USA Inc.

1,422,711 -
PMG85XP,115

数据表

- 6-TSSOP, SC-88, SOT-363 Bulk Active P-Channel MOSFET (Metal Oxide) 2A (Tj) 2.5V, 4.5V 115mOhm @ 2A, 4.5V Surface Mount 1.15V @ 250µA 7.2 nC @ 4.5 V 20 V ±12V 560 pF @ 10 V - - 6-TSSOP - 375mW (Ta), 2.4W (Tc) -55°C ~ 150°C (TJ)
SMBF1026LT1G

SMBF1026LT1G

NFET SOT23 SPCL 60V TR

onsemi

38,200 -
SMBF1026LT1G

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
SVC6H890N

SVC6H890N

SVC6H890N

onsemi

8,141 -
SVC6H890N

数据表

- Die Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 620A (Ta) 10V 0.53mOhm @ 50A, 10V Surface Mount 3.7V @ 1.4mA 485 nC @ 10 V 80 V ±20V 31000 pF @ 48 V AEC-Q101 - Die Automotive - -55°C ~ 175°C (TJ)
2N7002K

2N7002K

MOSFET SOT-23 N Channel 60V

MDD

777,000 -
2N7002K

数据表

SOT-23 TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 500mA (Ta) 4.5V, 10V 900mOhm @ 300mA, 10V Surface Mount 2.5V @ 250µA 0.31 nC @ 10 V 60 V ±20V 23.8 pF @ 10 V - - SOT-23 - 500mW (Ta) -55°C ~ 150°C
PMT760EN,115

PMT760EN,115

MOSFET N-CH 100V 900MA SOT223

NXP USA Inc.

3,410 -
PMT760EN,115

数据表

- TO-261-4, TO-261AA Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 900mA (Ta) 4.5V, 10V 950mOhm @ 800mA, 10V Surface Mount 2.5V @ 250µA 3 nC @ 10 V 100 V ±20V 160 pF @ 80 V - - SC-73 - 800mW (Ta), 6.2W (Tc) -55°C ~ 150°C (TJ)
TSM070NA04LCR RLG

TSM070NA04LCR RLG

MOSFET N-CH 40V 91A 8PDFN

Taiwan Semiconductor Corporation

5,787 -
TSM070NA04LCR RLG

数据表

- 8-PowerLDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 91A (Tc) 4.5V, 10V 7mOhm @ 14A, 10V Surface Mount 2.5V @ 250µA 23.5 nC @ 10 V 40 V ±20V 1469 pF @ 20 V - - 8-PDFN (5.2x5.75) - 113W (Tc) -55°C ~ 150°C (TJ)
PSMP025-40YEX

PSMP025-40YEX

PSMP025-40YE/SOT669/LFPAK

Nexperia USA Inc.

6,373 -
PSMP025-40YEX

数据表

- - Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 39.4A 10V - - - - 40 V - - - - - - - -
富聪科技

搜索

富聪科技

产品

富聪科技

电话

富聪科技

用户