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    首页 > 产品  > 分立半导体产品 > 晶体管 > 场效应晶体管（FETs）、金属氧化物半导体场效应晶体管（MOSFETs） > 场效应晶体管（FETs）、MOSFETs

    场效应晶体管（FETs）、MOSFETs

    制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压（最大导通电阻，最小导通电阻） 导通电阻 (Rds On)（最大值）@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th)）（最大值）@ Id 栅极电荷 (Qg)（最大值）@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)（最大值） 输入电容 (Ciss)（最大值）@ Vds 认证 FET 特性 供应商设备封装 等级 功耗（最大值） 工作温度

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    图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压（最大导通电阻，最小导通电阻） 导通电阻 (Rds On)（最大值）@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th)）（最大值）@ Id 栅极电荷 (Qg)（最大值）@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)（最大值） 输入电容 (Ciss)（最大值）@ Vds 认证 FET 特性 供应商设备封装 等级 功耗（最大值） 工作温度
    NVH4L025N065SC1

    NVH4L025N065SC1

    SIC MOS TO247-4L 650V

    onsemi

    		 882 -
    询价单
    		NVH4L025N065SC1

    数据表

         		- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 99A (Tc) 15V, 18V 28.5mOhm @ 45A, 18V Through Hole 4.3V @ 15.5mA 164 nC @ 18 V 650 V +22V, -8V 3480 pF @ 325 V AEC-Q101 - TO-247-4L Automotive 348W (Tc) -55°C ~ 175°C (TJ)
    IPQC60R010S7XTMA1

    IPQC60R010S7XTMA1

    MOSFET

    Infineon Technologies

    		 750 -
    询价单
    		IPQC60R010S7XTMA1

    数据表

         		CoolMOS™ S7 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 50A (Tc) 12V 10mOhm @ 50A, 12V Surface Mount 4.5V @ 3.08mA 318 nC @ 12 V 600 V ±20V - - - PG-HDSOP-22 - 694W (Tc) -55°C ~ 150°C (TJ)
    NTHL019N60S5F

    NTHL019N60S5F

    SUPERFET5 FRFET, 19MOHM, TO-247-

    onsemi

    		 442 -
    询价单
    		NTHL019N60S5F

    数据表

         		SuperFET® V, FRFET® TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 75A (Tc) 10V 19mOhm @ 37.5A,10V Through Hole 4.8V @ 15.7mA 252 nC @ 10 V 600 V ±30V 13400 pF @ 400 V - - TO-247-3 - 568W (Tc) -55°C ~ 150°C (TJ)
    E3M0040120J2-TR

    E3M0040120J2-TR

    40m, 1200V SiC FET, TO-263-7 XL

    Wolfspeed, Inc.

    		 736 -
    询价单
    		E3M0040120J2-TR

    数据表

         		E TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 63A (Tc) 15V 53mOhm @ 31.9A, 15V Surface Mount 3.8V @ 8.77mA 91 nC @ 15 V 1200 V +19V, -8V 2726 pF @ 1000 V AEC-Q101 - TO-263-7 Automotive 294W (Tc) -55°C ~ 175°C (TJ)
    IRFR3518TRPBF

    IRFR3518TRPBF

    MOSFET N-CH 80V 38A DPAK

    Infineon Technologies

    		 9,543 -
    询价单
    		IRFR3518TRPBF

    数据表

         		HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 38A (Tc) 10V 29mOhm @ 18A, 10V Surface Mount 4V @ 250µA 56 nC @ 10 V 80 V ±20V 1710 pF @ 25 V - - TO-252AA (DPAK) - 110W (Tc) -55°C ~ 175°C (TJ)
    AOM020V120X2

    AOM020V120X2

    1200V SILICON CARBIDE MOSFET

    Alpha & Omega Semiconductor Inc.

    		 230 -
    询价单
    		AOM020V120X2

    数据表

         		- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 89A (Tc) 15V 28mOhm @ 27A, 15V Through Hole 2.8V @ 27mA 166 nC @ 15 V 1200 V +18V, -8V 5180 pF @ 800 V - - TO-247-4L - 348W (Tc) -55°C ~ 175°C (TJ)
    S2M0016120D-1

    S2M0016120D-1

    MOSFET SILICON CARBIDE SIC 1200V

    SMC Diode Solutions

    		 300 -
    询价单
    		S2M0016120D-1

    数据表

         		- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 140A (Tc) 18V, 20V 23mOhm @ 75A, 20V Through Hole 3.6V @ 23mA 285 nC @ 20 V 1200 V +20V, -5V 4540 pF @ 1000 V - - TO-247AD - 517W (Tc) -55°C ~ 175°C (TJ)
    TN0604N3-G-P005

    TN0604N3-G-P005

    MOSFET N-CH 40V 700MA TO92-3

    Microchip Technology

    		 7,078 -
    询价单
    		TN0604N3-G-P005

    数据表

         		- TO-226-3, TO-92-3 (TO-226AA) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 700mA (Tj) 5V, 10V 750mOhm @ 1.5A, 10V Through Hole 1.6V @ 1mA - 40 V ±20V 190 pF @ 20 V - - TO-92-3 - 740mW (Ta) -55°C ~ 150°C (TJ)
    NVH4L030N120M3S

    NVH4L030N120M3S

    SILICON CARBIDE (SIC) MOSFET-ELI

    onsemi

    		 393 -
    询价单
    		NVH4L030N120M3S

    数据表

         		- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 73A (Tc) 18V 39mOhm @ 30A, 18V Through Hole 4.4V @ 15mA 107 nC @ 18 V 1200 V +22V, -10V 2430 pF @ 800 V AEC-Q101 - TO-247-4L Automotive 313W (Tc) -55°C ~ 175°C (TJ)
    TN0604N3-G-P013

    TN0604N3-G-P013

    MOSFET N-CH 40V 700MA TO92-3

    Microchip Technology

    		 4,762 -
    询价单
    		TN0604N3-G-P013

    数据表

         		- TO-226-3, TO-92-3 (TO-226AA) Tape & Box (TB) Active N-Channel MOSFET (Metal Oxide) 700mA (Tj) 5V, 10V 750mOhm @ 1.5A, 10V Through Hole 1.6V @ 1mA - 40 V ±20V 190 pF @ 20 V - - TO-92-3 - 740mW (Ta) -55°C ~ 150°C (TJ)
    S2M0016120K-1

    S2M0016120K-1

    MOSFET SILICON CARBIDE SIC 1200V

    SMC Diode Solutions

    		 147 -
    询价单
    		S2M0016120K-1

    数据表

         		- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 140A (Tc) 18V, 20V 23mOhm @ 75A, 20V Through Hole 3.6V @ 23mA 285 nC @ 20 V 1200 V +20V, -5V 4540 pF @ 1000 V - - TO-247-4 - 517W (Tc) -55°C ~ 175°C (TJ)
    TSM061NA03CV RGG

    TSM061NA03CV RGG

    MOSFET N-CH 30V 66A 8PDFN

    Taiwan Semiconductor Corporation

    		 8,575 -
    询价单
    		TSM061NA03CV RGG

    数据表

         		- 8-PowerWDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 66A (Tc) 4.5V, 10V 6.1mOhm @ 16A, 10V Surface Mount 2.5V @ 250µA 19.3 nC @ 10 V 30 V ±20V 1136 pF @ 15 V - - 8-PDFN (3.1x3.1) - 44.6W (Tc) -55°C ~ 150°C (TJ)
    TSG65N068CE RVG

    TSG65N068CE RVG

    650V, 30A, PDFN88, E-MODE GAN TR

    Taiwan Semiconductor Corporation

    		 2,962 -
    询价单
    		TSG65N068CE RVG

    数据表

         		* - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
    TSM300NB06CR RLG

    TSM300NB06CR RLG

    MOSFET N-CH 60V 6A/27A 8PDFN

    Taiwan Semiconductor Corporation

    		 2,591 -
    询价单
    		TSM300NB06CR RLG

    数据表

         		- 8-PowerLDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 6A (Ta), 27A (Tc) 10V 30mOhm @ 6A, 10V Surface Mount 4.5V @ 250µA 18 nC @ 10 V 60 V ±20V 1110 pF @ 30 V - - 8-PDFN (5.2x5.75) - 3.1W (Ta), 56W (Tc) -55°C ~ 175°C (TJ)
    C3M0065100J-TR

    C3M0065100J-TR

    SICFET N-CH 1000V 35A TO263-7

    Wolfspeed, Inc.

    		 788 -
    询价单
    		C3M0065100J-TR

    数据表

         		C3M™ TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Last Time Buy N-Channel SiCFET (Silicon Carbide) 35A (Tc) 15V 78mOhm @ 20A, 15V Surface Mount 3.5V @ 5mA 35 nC @ 15 V 1000 V +15V, -4V 660 pF @ 600 V - - TO-263-7 - 113.5W (Tc) -55°C ~ 150°C (TJ)
    G3F20MT12J-TR

    G3F20MT12J-TR

    1200V 20M TO-263-7 G3F SIC MOSFE

    GeneSiC Semiconductor

    		 800 -
    询价单
    		G3F20MT12J-TR

    数据表

         		- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiC (Silicon Carbide Junction Transistor) 108A (Tc) 18V 26.5mOhm @ 40A, 18V Surface Mount 4.3V @ 30mA 176 nC @ 18 V 1200 V +22V, -10V 4317 pF @ 800 V AEC-Q101 - TO-263-7 Automotive 448W (Tc) -55°C ~ 175°C (TJ)
    IMZA75R016M1HXKSA1

    IMZA75R016M1HXKSA1

    SILICON CARBIDE MOSFET

    Infineon Technologies

    		 210 -
    询价单
    		IMZA75R016M1HXKSA1

    数据表

         		CoolSiC™ TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 89A (Tj) 15V, 20V 15mOhm @ 41.5A, 20V Through Hole 5.6V @ 14.9mA 81 nC @ 18 V 750 V +23V, -5V 2869 pF @ 500 V - - PG-TO247-4 - 319W (Tc) -55°C ~ 175°C (TJ)
    AIMZA75R016M1HXKSA1

    AIMZA75R016M1HXKSA1

    SICFET N-CH 750V 89A PG-TO247-4

    Infineon Technologies

    		 213 -
    询价单
    		AIMZA75R016M1HXKSA1

    数据表

         		CoolSiC™ TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 89A (Tc) 15V, 20V 22mOhm @ 41.5A, 18V Through Hole 5.6V @ 14.9mA 81 nC @ 18 V 750 V +23V, -5V 2869 pF @ 500 V AEC-Q101 - PG-TO247-4 Automotive 319W (Tc) -55°C ~ 175°C (TJ)
    DIF120SIC053-AQ

    DIF120SIC053-AQ

    MOSFET TO-247-4L N 65A 1200V

    Diotec Semiconductor

    		 433 -
    询价单
    		DIF120SIC053-AQ

    数据表

         		- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 65A (Tc) 18V 53mOhm @ 33A, 18V Through Hole 4V @ 9.5mA 121 nC @ 15 V 1200 V - 2070 pF @ 1000 V AEC-Q101 - TO-247-4 Automotive 278W (Tc) -55°C ~ 175°C (TJ)
    DIW120SIC059-AQ

    DIW120SIC059-AQ

    MOSFET TO-247-3L N 65A 1200V

    Diotec Semiconductor

    		 430 -
    询价单
    		DIW120SIC059-AQ

    数据表

         		- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 65A (Tc) 18V 53mOhm @ 33A, 18V Through Hole 4V @ 9.5mA 121 nC @ 15 V 1200 V - 2070 pF @ 1000 V AEC-Q101 - TO-247 Automotive 278W (Tc) -55°C ~ 175°C (TJ)
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