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场效应晶体管（FETs）、MOSFETs

制造商	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
Alpha & Omega Semiconductor Inc. Analog Power Inc. ANBON SEMICONDUCTOR (INT'L) LIMITED APSEMI Bruckewell Cambridge GaN Devices Central Semiconductor Corp Coherent Corp Comchip Technology CoolCAD Diodes Incorporated Diotec Semiconductor EPC EPC Space, LLC EVVO Fairchild Semiconductor Fairchild/ON Semiconductor fastSiC Flip Electronics GaNPower GeneSiC Semiconductor Goford Semiconductor Good-Ark Semiconductor Harris Corporation Honeywell Aerospace HY Electronic (Cayman) Limited IceMOS Technology Infineon Technologies International Rectifier Intersil Inventchip IXYS IXYS Integrated Circuits Division Linear Integrated Systems, Inc. Littelfuse Inc. MaxLinear, Inc. MDD Meritek Micro Commercial Co Microchip Technology Microsemi Corporation Motorola National Semiconductor NEC Corporation Nexperia USA Inc. NextGen Components Group NoMIS Power NovuSem Nuvoton Technology Corporation NXP Semiconductors onsemi Panasonic - BSG Panjit International Inc. PN Junction Semiconductor Qorvo Quest Semi Rectron USA Renesas ROHM Semiconductor Sanken Electric USA Inc. Sanyo SemiQ Shenzhen Slkormicro Semicon Co., Ltd. Siemens Siliconix Skyworks Solutions Inc. SMC Diode Solutions SparkFun Electronics STMicroelectronics Taiwan Semiconductor Corporation Texas Instruments Torex Semiconductor Ltd Toshiba Semiconductor and Storage Transphorm TT Electronics/Optek Technology UMW Venkel Vicor Corporation Vishay Vishay General Semiconductor - Diodes Division Vishay Siliconix WeEn Semiconductors Wise-Integration Wolfspeed, Inc. YAGEO XSemi

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厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
IRC640PBF MOSFET N-CH 200V 18A TO220-5 Vishay Siliconix	2,677	-	询价单	数据表	HEXFET®	TO-220-5	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	18A (Tc)	10V	180mOhm @ 11A, 10V	Through Hole	4V @ 250µA	70 nC @ 10 V	200 V	±20V	1300 pF @ 25 V	-	Current Sensing	TO-220-5	-	125W (Tc)	-55°C ~ 150°C (TJ)
NVMFS5C430NAFT3G MOSFET N-CH 40V 35A/185A 5DFN onsemi	4,761	-	询价单	数据表	-	8-PowerTDFN, 5 Leads	Tape & Reel (TR)	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	35A (Ta), 185A (Tc)	10V	1.7mOhm @ 50A, 10V	Surface Mount	3.5V @ 250µA	47 nC @ 10 V	40 V	±20V	3300 pF @ 25 V	AEC-Q101	-	5-DFN (5x6) (8-SOFL)	Automotive	3.8W (Ta), 106W (Tc)	-55°C ~ 175°C (TJ)
IRL530NSTRL MOSFET N-CH 100V 17A D2PAK Infineon Technologies	5,774	-	询价单	数据表	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	17A (Tc)	4V, 10V	100mOhm @ 9A, 10V	Surface Mount	2V @ 250µA	34 nC @ 5 V	100 V	±20V	800 pF @ 25 V	-	-	D2PAK	-	3.8W (Ta), 79W (Tc)	-55°C ~ 175°C (TJ)
IRL530NSTRR MOSFET N-CH 100V 17A D2PAK Infineon Technologies	4,586	-	询价单	数据表	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	17A (Tc)	4V, 10V	100mOhm @ 9A, 10V	Surface Mount	2V @ 250µA	34 nC @ 5 V	100 V	±20V	800 pF @ 25 V	-	-	D2PAK	-	3.8W (Ta), 79W (Tc)	-55°C ~ 175°C (TJ)
IRF9510STRR MOSFET P-CH 100V 4A D2PAK Vishay Siliconix	3,608	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	4A (Tc)	10V	1.2Ohm @ 2.4A, 10V	Surface Mount	4V @ 250µA	8.7 nC @ 10 V	100 V	±20V	200 pF @ 25 V	-	-	TO-263 (D2PAK)	-	3.7W (Ta), 43W (Tc)	-55°C ~ 175°C (TJ)
IRLZ24NSTRL MOSFET N-CH 55V 18A D2PAK Infineon Technologies	2,285	-	询价单	数据表	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	18A (Tc)	4V, 10V	60mOhm @ 11A, 10V	Surface Mount	2V @ 250µA	15 nC @ 5 V	55 V	±16V	480 pF @ 25 V	-	-	D2PAK	-	3.8W (Ta), 45W (Tc)	-55°C ~ 175°C (TJ)
AIMZHN120R040M1TXKSA1 SIC_DISCRETE Infineon Technologies	240	-	询价单	数据表	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	55A (Tc)	18V, 20V	50mOhm @ 20A, 20V	Through Hole	5.1V @ 6.4mA	43 nC @ 20 V	1200 V	+23V, -5V	1264 pF @ 800 V	AEC-Q101	-	PG-TO247-4-14	Automotive	268W (Tc)	-55°C ~ 175°C (TJ)
G3F25MT12J-TR 1200V 25M TO-263-7 G3F SIC MOSFE GeneSiC Semiconductor	800	-	询价单	数据表	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	87A (Tc)	18V	34mOhm @ 34A, 18V	Surface Mount	4.3V @ 24mA	128 nC @ 18 V	1200 V	+22V, -10V	3325 pF @ 800 V	AEC-Q101	-	TO-263-7	Automotive	362W (Tc)	-55°C ~ 175°C (TJ)
IMT40R011M2HXTMA1 SIC-MOS Infineon Technologies	1,927	-	询价单	数据表	CoolSiC™	8-PowerSFN	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	13.4A (Ta), 144A (Tc)	15V, 18V	14.4mOhm @ 37.1A, 18V	Surface Mount	5.6V @ 13.3mA	85 nC @ 18 V	400 V	+23V, -7V	3770 pF @ 200 V	-	-	PG-HSOF-8-2	-	3.8W (Ta), 429W (Tc)	-55°C ~ 175°C (TJ)
SCT3030ARC15 650V, 70A, 4-PIN THD, TRENCH-STR Rohm Semiconductor	386	-	询价单	数据表	-	TO-247-4	Tube	Active	N-Channel	MOSFET (Metal Oxide)	70A (Tc)	18V	39mOhm @ 27A, 18V	Through Hole	5.6V @ 13.3mA	104 nC @ 18 V	650 V	+22V, -4V	1526 pF @ 500 V	-	-	TO-247-4L	-	262W	175°C (TJ)
IMZC120R017M2HXKSA1 IMZC120R017M2HXKSA1 Infineon Technologies	240	-	询价单	数据表	CoolSiC™	TO-247-4	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	97A (Tc)	15V, 18V	17mOhm @ 40A, 18V	Through Hole	5.1V @ 12.7mA	89 nC @ 18 V	1200 V	+23V, -7V	2910 pF @ 800 V	-	-	PG-TO247-4-17	-	382W (Tc)	-55°C ~ 175°C (TJ)
NVH4L027N65S3F SF3 FRFET AUTO 27MOHM TO-247-4L onsemi	799	-	询价单	数据表	SuperFET® III, FRFET®	TO-247-4	Tube	Active	N-Channel	MOSFET (Metal Oxide)	75A (Tc)	10V	27.4mOhm @ 35A, 10V	Through Hole	5V @ 3mA	227 nC @ 10 V	650 V	±30V	7780 pF @ 400 V	-	-	TO-247-4L	-	595W (Tc)	-55°C ~ 150°C (TJ)
C3M0045065J1-TR SIC, MOSFET 45M, 650V TO-263-7XL Wolfspeed, Inc.	730	-	询价单	数据表	C3M™	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	47A (Tc)	15V	60mOhm @ 17.6A, 15V	Surface Mount	3.6V @ 4.84mA	61 nC @ 15 V	650 V	+19V, -8V	1621 pF @ 400 V	-	-	TO-263-7	-	147W (Tc)	-40°C ~ 150°C (TJ)
G3F25MT12K 1200V 25M TO-247-4 G3F SIC MOSFE GeneSiC Semiconductor	595	-	询价单	数据表	-	-	Tube	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SCT3030ARHRC15 650V, 70A, 4-PIN THD, TRENCH-STR Rohm Semiconductor	448	-	询价单	数据表	-	TO-247-4	Tube	Active	N-Channel	MOSFET (Metal Oxide)	70A (Tc)	18V	39mOhm @ 27A, 18V	Through Hole	5.6V @ 13.3mA	104 nC @ 18 V	650 V	+22V, -4V	1526 pF @ 500 V	AEC-Q101	-	TO-247-4L	Automotive	262W	175°C (TJ)
AIMBG120R030M1XTMA1 SIC_DISCRETE Infineon Technologies	1,708	-	询价单	数据表	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	70A (Tc)	18V, 20V	38mOhm @ 27A, 20V	Surface Mount	5.1V @ 8.6mA	57 nC @ 20 V	1200 V	+23V, -5V	1738 pF @ 800 V	AEC-Q101	-	PG-TO263-7-12	Automotive	333W (Tc)	-55°C ~ 175°C (TJ)
SCT3040KRC15 1200V, 55A, 4-PIN THD, TRENCH-ST Rohm Semiconductor	370	-	询价单	数据表	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	55A (Tj)	18V	52mOhm @ 20A, 18V	Through Hole	5.6V @ 10mA	107 nC @ 18 V	1200 V	+22V, -4V	1337 pF @ 800 V	-	-	TO-247-4L	-	262W	175°C (TJ)
AIMZA75R020M1HXKSA1 AUTOMOTIVE_SICMOS Infineon Technologies	190	-	询价单	数据表	CoolSiC™	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	75A (Tj)	15V, 20V	18mOhm @ 32.5A, 20V	Through Hole	5.6V @ 11.7mA	67 nC @ 18 V	750 V	+23V, -5V	2217 pF @ 500 V	AEC-Q101	-	PG-TO247-4	Automotive	278W (Tc)	-55°C ~ 175°C (TJ)
NSF030120D7A0J NSF030120D7A0/SOT8070/TO263-7L Nexperia USA Inc.	800	-	询价单	数据表	-	-	Tape & Reel (TR)	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRF3711ZSTRR MOSFET N-CH 20V 92A D2PAK Infineon Technologies	6,599	-	询价单	数据表	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	92A (Tc)	4.5V, 10V	6mOhm @ 15A, 10V	Surface Mount	2.45V @ 250µA	24 nC @ 4.5 V	20 V	±20V	2150 pF @ 10 V	-	-	D2PAK	-	79W (Tc)	-55°C ~ 175°C (TJ)

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