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场效应晶体管（FETs）、MOSFETs

制造商	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
Alpha & Omega Semiconductor Inc. Analog Power Inc. ANBON SEMICONDUCTOR (INT'L) LIMITED APSEMI Bruckewell Cambridge GaN Devices Central Semiconductor Corp Coherent Corp Comchip Technology CoolCAD Diodes Incorporated Diotec Semiconductor EPC EPC Space, LLC EVVO Fairchild Semiconductor Fairchild/ON Semiconductor fastSiC Flip Electronics GaNPower GeneSiC Semiconductor Goford Semiconductor Good-Ark Semiconductor Harris Corporation Honeywell Aerospace HY Electronic (Cayman) Limited IceMOS Technology Infineon Technologies International Rectifier Intersil Inventchip IXYS IXYS Integrated Circuits Division Linear Integrated Systems, Inc. Littelfuse Inc. MaxLinear, Inc. MDD Meritek Micro Commercial Co Microchip Technology Microsemi Corporation Motorola National Semiconductor NEC Corporation Nexperia USA Inc. NextGen Components Group NoMIS Power NovuSem Nuvoton Technology Corporation NXP Semiconductors onsemi Panasonic - BSG Panjit International Inc. PN Junction Semiconductor Qorvo Quest Semi Rectron USA Renesas ROHM Semiconductor Sanken Electric USA Inc. Sanyo SemiQ Shenzhen Slkormicro Semicon Co., Ltd. Siemens Siliconix Skyworks Solutions Inc. SMC Diode Solutions SparkFun Electronics STMicroelectronics Taiwan Semiconductor Corporation Texas Instruments Torex Semiconductor Ltd Toshiba Semiconductor and Storage Transphorm TT Electronics/Optek Technology UMW Venkel Vicor Corporation Vishay Vishay General Semiconductor - Diodes Division Vishay Siliconix WeEn Semiconductors Wise-Integration Wolfspeed, Inc. YAGEO XSemi

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厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
G3F34MT12K 1200V 34M TO-247-4 G3F SIC MOSFE GeneSiC Semiconductor	600	-	询价单	数据表	-	TO-247-4	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	63A (Tc)	18V	45mOhm @ 26A, 18V	Through Hole	4.3V @ 18mA	104 nC @ 18 V	1200 V	+22V, -10V	2418 pF @ 800 V	AEC-Q101	-	TO-247-4	Automotive	263W (Tc)	-55°C ~ 175°C (TJ)
AIMDQ75R020M1HXUMA1 AIMDQ75R020M1HXUMA1 Infineon Technologies	670	-	询价单	数据表	CoolSiC™	22-PowerBSOP Module	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	81A (Tj)	15V, 20V	18mOhm @ 32.5A, 20V	Surface Mount	5.6V @ 11.7mA	67 nC @ 18 V	750 V	+23V, -5V	2217 pF @ 500 V	AEC-Q101	-	PG-HDSOP-22	Automotive	326W (Tc)	-55°C ~ 175°C (TJ)
AOM033V120X2 1200V SILICON CARBIDE MOSFET Alpha & Omega Semiconductor Inc.	234	-	询价单	数据表	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	68A (Tc)	15V	43mOhm @ 20A, 15V	Through Hole	2.8V @ 17.5mA	104 nC @ 15 V	1200 V	+15V, -5V	2908 pF @ 800 V	-	-	TO-247-4L	-	300W (Ta)	-55°C ~ 175°C (TJ)
S3M0025120K MOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions	240	-	询价单	数据表	-	TO-247-4	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	77A (Tc)	18V	32mOhm @ 48A, 18V	Through Hole	4V @ 20mA	175 nC @ 18 V	1200 V	+22V, -8V	3519 pF @ 1000 V	-	-	TO-247-4	-	517W (Tc)	-55°C ~ 175°C (TJ)
GAN039-650NBBHP 650 V, 33 MOHM GALLIUM NITRIDE ( Nexperia USA Inc.	935	-	询价单	数据表	-	12-BESOP (0.370", 9.40mm Width), Exposed Pad	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	60A (Tc)	10V	39mOhm @ 32A, 10V	Surface Mount	4.8V @ 1mA	30 nC @ 10 V	650 V	±20V	1500 pF @ 400 V	-	-	CCPAK1212	-	300W (Tc)	-55°C ~ 175°C (TJ)
NVH4L023N065M3S SIC MOS TO247-4L 23MOHM 650V M3S onsemi	450	-	询价单	数据表	-	TO-247-4	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	67A (Tc)	15V, 18V	33mOhm @ 20A, 18V	Through Hole	4V @ 10mA	69 nC @ 18 V	650 V	+22V, -8V	1952 pF @ 400 V	AEC-Q101	-	TO-247-4	Automotive	245W (Tc)	-55°C ~ 175°C (TJ)
IMZA75R020M1HXKSA1 SILICON CARBIDE MOSFET Infineon Technologies	237	-	询价单	数据表	CoolSiC™	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	75A (Tj)	15V, 20V	18mOhm @ 32.5A, 20V	Through Hole	5.6V @ 11.7mA	67 nC @ 18 V	750 V	+23V, -5V	2217 pF @ 500 V	-	-	PG-TO247-4	-	278W (Tc)	-55°C ~ 175°C (TJ)
G3F25MT06K 650V 20M TO-247-4 G3F SIC MOSFET GeneSiC Semiconductor	595	-	询价单	数据表	-	TO-247-4	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	100A (Tc)	15V, 18V	27.5mOhm @ 35A, 18V	Through Hole	4.3V @ 15mA	108 nC @ 18 V	650 V	+22V, -10V	2939 pF @ 400 V	AEC-Q101	-	TO-247-4	Automotive	294W (Tc)	-55°C ~ 175°C (TJ)
IRF3707ZCS MOSFET N-CH 30V 59A D2PAK Infineon Technologies	3,208	-	询价单	数据表	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	59A (Tc)	4.5V, 10V	9.5mOhm @ 21A, 10V	Surface Mount	2.25V @ 250µA	15 nC @ 4.5 V	30 V	±20V	1210 pF @ 15 V	-	-	D2PAK	-	57W (Tc)	-55°C ~ 175°C (TJ)
IQE057N10NM6ATMA1 TRENCH >=100V Infineon Technologies	3,838	-	询价单	数据表	-	-	Tape & Reel (TR)	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPI12CN10N G MOSFET N-CH 100V 67A TO262-3 Infineon Technologies	7,569	-	询价单	数据表	OptiMOS™	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	67A (Tc)	10V	12.9mOhm @ 67A, 10V	Through Hole	4V @ 83µA	65 nC @ 10 V	100 V	±20V	4320 pF @ 50 V	-	-	PG-TO262-3	-	125W (Tc)	-55°C ~ 175°C (TJ)
NVBG040N120M3S SILICON CARBIDE (SIC) MOSFET-ELI onsemi	760	-	询价单	数据表	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	57A (Tc)	18V	54mOhm @ 20A, 18V	Surface Mount	4.4V @ 10mA	75 nC @ 18 V	1200 V	+22V, -10V	1700 pF @ 800 V	AEC-Q101	-	D2PAK-7	Automotive	263W (Tc)	-55°C ~ 175°C (TJ)
BTS247Z E3062A MOSFET N-CH 55V 33A TO263-5 Infineon Technologies	8,333	-	询价单	数据表	TEMPFET®	TO-263-5, D2PAK (4 Leads + Tab), TO-263BB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	33A (Tc)	4.5V, 10V	18mOhm @ 12A, 10V	Surface Mount	2V @ 90µA	90 nC @ 10 V	55 V	±20V	1730 pF @ 25 V	-	Temperature Sensing Diode	PG-TO263-5-2	-	120W (Tc)	-40°C ~ 175°C (TJ)
NTMFS5C442NLTT3G MOSFET N-CH 40V 28A/130A 5DFN onsemi	8,956	-	询价单	数据表	-	8-PowerTDFN, 5 Leads	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	28A (Ta), 130A (Tc)	4.5V, 10V	2.5mOhm @ 50A, 10V	Surface Mount	2V @ 250µA	50 nC @ 10 V	40 V	±20V	3100 pF @ 25 V	-	-	5-DFN (5x6) (8-SOFL)	-	3.7W (Ta), 83W (Tc)	-55°C ~ 175°C (TJ)
IRFU4105Z MOSFET N-CH 55V 30A IPAK Infineon Technologies	9,781	-	询价单	数据表	HEXFET®	TO-251-3 Short Leads, IPAK, TO-251AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	30A (Tc)	10V	24.5mOhm @ 18A, 10V	Through Hole	4V @ 250µA	27 nC @ 10 V	55 V	±20V	740 pF @ 25 V	-	-	IPAK (TO-251AA)	-	48W (Tc)	-55°C ~ 175°C (TJ)
IRLU4343 MOSFET N-CH 55V 26A I-PAK Infineon Technologies	4,038	-	询价单	数据表	HEXFET®	TO-251-3 Short Leads, IPAK, TO-251AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	26A (Tc)	4.5V, 10V	50mOhm @ 4.7A, 10V	Through Hole	1V @ 250µA	42 nC @ 10 V	55 V	±20V	740 pF @ 50 V	-	-	IPAK	-	79W (Tc)	-55°C ~ 175°C (TJ)
DIT080N08-AQ MOSFET TO-220AB N 80V 80A Diotec Semiconductor	4,850	-	询价单	数据表	-	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	110A (Tc)	4.5V, 10V	4.8mOhm @ 50A, 10V	Through Hole	2.4V @ 250µA	75 nC @ 10 V	85 V	±20V	3742 pF @ 50 V	AEC-Q101	-	TO-220AB	Automotive	62.5W (Tc)	-55°C ~ 150°C (TJ)
IRFR3504ZTR MOSFET N-CH 40V 42A DPAK Infineon Technologies	2,134	-	询价单	数据表	HEXFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	42A (Tc)	10V	9mOhm @ 42A, 10V	Surface Mount	4V @ 50µA	45 nC @ 10 V	40 V	±20V	1510 pF @ 25 V	-	-	TO-252AA (DPAK)	-	90W (Tc)	-55°C ~ 175°C (TJ)
IRFR3504ZTRL MOSFET N-CH 40V 42A DPAK Infineon Technologies	2,122	-	询价单	数据表	HEXFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	42A (Tc)	10V	9mOhm @ 42A, 10V	Surface Mount	4V @ 50µA	45 nC @ 10 V	40 V	±20V	1510 pF @ 25 V	-	-	TO-252AA (DPAK)	-	90W (Tc)	-55°C ~ 175°C (TJ)
HAT2165H-EL-E MOSFET N-CH 30V 55A LFPAK Renesas Electronics Corporation	2,209	-	询价单	数据表	-	SC-100, SOT-669	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	55A (Ta)	4.5V, 10V	3.3mOhm @ 27.5A, 10V	Surface Mount	2.5V @ 1mA	33 nC @ 4.5 V	30 V	±20V	5180 pF @ 10 V	-	-	LFPAK	-	30W (Tc)	150°C (TJ)

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