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场效应晶体管（FETs）、MOSFETs

制造商	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
Alpha & Omega Semiconductor Inc. Analog Power Inc. ANBON SEMICONDUCTOR (INT'L) LIMITED APSEMI Bruckewell Cambridge GaN Devices Central Semiconductor Corp Coherent Corp Comchip Technology CoolCAD Diodes Incorporated Diotec Semiconductor EPC EPC Space, LLC EVVO Fairchild Semiconductor Fairchild/ON Semiconductor fastSiC Flip Electronics GaNPower GeneSiC Semiconductor Goford Semiconductor Good-Ark Semiconductor Harris Corporation Honeywell Aerospace HY Electronic (Cayman) Limited IceMOS Technology Infineon Technologies International Rectifier Intersil Inventchip IXYS IXYS Integrated Circuits Division Linear Integrated Systems, Inc. Littelfuse Inc. MaxLinear, Inc. MDD Meritek Micro Commercial Co Microchip Technology Microsemi Corporation Motorola National Semiconductor NEC Corporation Nexperia USA Inc. NextGen Components Group NoMIS Power NovuSem Nuvoton Technology Corporation NXP Semiconductors onsemi Panasonic - BSG Panjit International Inc. PN Junction Semiconductor Qorvo Quest Semi Rectron USA Renesas ROHM Semiconductor Sanken Electric USA Inc. Sanyo SemiQ Shenzhen Slkormicro Semicon Co., Ltd. Siemens Siliconix Skyworks Solutions Inc. SMC Diode Solutions SparkFun Electronics STMicroelectronics Taiwan Semiconductor Corporation Texas Instruments Torex Semiconductor Ltd Toshiba Semiconductor and Storage Transphorm TT Electronics/Optek Technology UMW Venkel Vicor Corporation Vishay Vishay General Semiconductor - Diodes Division Vishay Siliconix WeEn Semiconductors Wise-Integration Wolfspeed, Inc. YAGEO XSemi

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厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
NVBG060N090SC1 SIC MOS N-CH 900V 5.8A D2PAK-7 onsemi	2,081	-	询价单	数据表	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	5.8A (Ta), 44A (Tc)	15V	84mOhm @ 20A, 15V	Surface Mount	4.3V @ 5mA	88 nC @ 15 V	900 V	+19V, -10V	1800 pF @ 450 V	AEC-Q101	-	D2PAK-7	Automotive	3.6W (Ta), 211W (Tc)	-55°C ~ 175°C (TJ)
NSF040120D7A0J NSF040120D7A0/SOT8070/TO263-7L Nexperia USA Inc.	800	-	询价单	数据表	-	-	Tape & Reel (TR)	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
AIMBG75R020M1HXTMA1 AIMBG75R020M1HXTMA1 Infineon Technologies	424	-	询价单	数据表	CoolSiC™	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	81A (Tj)	15V, 20V	18mOhm @ 34.1A, 20V	Surface Mount	5.6V @ 12.2mA	70 nC @ 18 V	750 V	+23V, -5V	2326 pF @ 500 V	AEC-Q101	-	PG-TO263-7	Automotive	326W (Tc)	-55°C ~ 175°C (TJ)
SI5410DU-T1-GE3 MOSFET N-CH 40V 12A PPAK Vishay Siliconix	3,738	-	询价单	数据表	TrenchFET®	PowerPAK® ChipFET™ Single	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	12A (Tc)	4.5V, 10V	18mOhm @ 6.6A, 10V	Surface Mount	3V @ 250µA	32 nC @ 10 V	40 V	±20V	1350 pF @ 20 V	-	-	PowerPAK® ChipFET™ Single	-	3.1W (Ta), 31W (Tc)	-55°C ~ 150°C (TJ)
FDD6637-F085 MOSFET P-CH 35V 13A DPAK onsemi	7,282	-	询价单	数据表	PowerTrench®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	21A (Tc)	4.5V, 10V	11.6mOhm @ 14A, 10V	Surface Mount	3V @ 250µA	63 nC @ 10 V	35 V	±25V	2370 pF @ 20 V	AEC-Q101	-	TO-252AA	Automotive	68W (Tc)	-55°C ~ 150°C (TJ)
SI5486DU-T1-GE3 MOSFET N-CH 20V 12A CHIPFET Vishay Siliconix	7,197	-	询价单	数据表	TrenchFET®	PowerPAK® ChipFET™ Single	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	12A (Tc)	1.8V, 4.5V	15mOhm @ 7.7A, 4.5V	Surface Mount	1V @ 250µA	54 nC @ 8 V	20 V	±8V	2100 pF @ 10 V	-	-	PowerPAK® ChipFET™ Single	-	3.1W (Ta), 31W (Tc)	-55°C ~ 150°C (TJ)
PSMN4R0-25YLC,115 MOSFET N-CH 25V 84A LFPAK56 Nexperia USA Inc.	4,139	-	询价单	数据表	-	SC-100, SOT-669	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	84A (Tc)	4.5V, 10V	4.5mOhm @ 20A, 10V	Surface Mount	1.95V @ 1mA	22.8 nC @ 10 V	25 V	±20V	1407 pF @ 12 V	-	-	LFPAK56, Power-SO8	-	61W (Tc)	-55°C ~ 175°C (TJ)
AOM033V120X2Q 1200V SILICON CARBIDE MOSFET Alpha & Omega Semiconductor Inc.	150	-	询价单	数据表	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	68A (Tc)	15V	43mOhm @ 20A, 15V	Through Hole	2.8V @ 17.5mA	104 nC @ 15 V	1200 V	+18V, -8V	2908 pF @ 800 V	AEC-Q101	-	TO-247-4L	Automotive	300W (Tj)	-55°C ~ 175°C (TJ)
GKI06185 MOSFET N-CH 60V 7A 8DFN Sanken Electric USA Inc.	5,106	-	询价单	数据表	-	8-PowerTDFN	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	7A (Ta)	4.5V, 10V	15mOhm @ 15.5A, 10V	Surface Mount	2.5V @ 350µA	23.7 nC @ 10 V	60 V	±20V	1510 pF @ 25 V	-	-	8-DFN (5x6)	-	3.1W (Ta), 46W (Tc)	150°C (TJ)
NVHL045N065SC1 SIC MOS TO247-3L 650V onsemi	442	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	66A (Tc)	15V, 18V	50mOhm @ 25A, 18V	Through Hole	4.3V @ 8mA	105 nC @ 18 V	650 V	+22V, -8V	1870 pF @ 325 V	AEC-Q101	-	TO-247-3	Automotive	291W (Tc)	-55°C ~ 175°C (TJ)
BSZ0703LSATMA1 MOSFET N-CH 60V 40A TSDSON Infineon Technologies	3,111	-	询价单	数据表	OptiMOS™	8-PowerTDFN	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	40A (Tc)	4.5V, 10V	6.5mOhm @ 20A, 10V	Surface Mount	2.3V @ 20µA	13 nC @ 4.5 V	60 V	±20V	1800 pF @ 30 V	-	-	PG-TSDSON-8-26	-	46W (Tc)	-55°C ~ 150°C (TJ)
E4M0045075J2-TR MOSFETS 1606 PF 172W 3.8V 62 NC Wolfspeed, Inc.	426	-	询价单	数据表	E	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	46A (Tc)	15V	60mOhm @ 17.6A, 15V	Surface Mount	3.8V @ 4.84mA	62 nC @ 15 V	750 V	+19V, -8V	1606 pF @ 500 V	AEC-Q101	-	TO-263-7	Automotive	172W (Tc)	-55°C ~ 175°C (TJ)
PJQ5444-AU_R2_000A1 40V N-CHANNEL ENHANCEMENT MODE M Panjit International Inc.	6,239	-	询价单	数据表	-	8-PowerVDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	12.7A (Ta), 70A (Tc)	4.5V, 10V	6.5mOhm @ 20A, 10V	Surface Mount	2.5V @ 250µA	17 nC @ 4.5 V	40 V	±20V	1759 pF @ 25 V	AEC-Q101	-	DFN5060-8	Automotive	2.4W (Ta), 100W (Tc)	-55°C ~ 175°C (TJ)
PJQ4442P_R2_00001 40V N-CHANNEL ENHANCEMENT MODE M Panjit International Inc.	3,863	-	询价单	数据表	-	8-PowerVDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	12.7A (Ta), 50A (Tc)	4.5V, 10V	7.5mOhm @ 20A, 10V	Surface Mount	2.5V @ 250µA	17 nC @ 4.5 V	40 V	±20V	1759 pF @ 25 V	-	-	DFN3333-8	-	2W (Ta), 45W (Tc)	-55°C ~ 150°C (TJ)
NVMFS5C628NLWFAFT3G MOSFET N-CH 60V 28A/150A 5DFN onsemi	6,598	-	询价单	数据表	-	8-PowerTDFN, 5 Leads	Tape & Reel (TR)	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	28A (Ta), 150A (Tc)	4.5V, 10V	2.4mOhm @ 50A, 10V	Surface Mount	2V @ 135µA	52 nC @ 10 V	60 V	±20V	3600 pF @ 25 V	AEC-Q101	-	5-DFN (5x6) (8-SOFL)	Automotive	3.7W (Ta), 110W (Tc)	-55°C ~ 175°C (TJ)
DMTH83M2SPSWQ-13 MOSFET BVDSS: 61V~100V POWERDI50 Diodes Incorporated	3,400	-	询价单	数据表	-	8-PowerTDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	165A (Tc)	6V, 10V	2.9mOhm @ 30A, 10V	Surface Mount, Wettable Flank	4V @ 250µA	87 nC @ 10 V	80 V	±20V	5466 pF @ 40 V	AEC-Q101	-	PowerDI5060-8 (Type UX)	Automotive	4.1W (Ta), 150W (Tc)	-55°C ~ 175°C (TJ)
IXFK420N10T MOSFET N-CH 100V 420A TO264AA Littelfuse Inc.	224	-	询价单	数据表	HiPerFET™, Trench	TO-264-3, TO-264AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	420A (Tc)	10V	2.6mOhm @ 60A, 10V	Through Hole	5V @ 8mA	670 nC @ 10 V	100 V	±20V	47000 pF @ 25 V	-	-	TO-264AA (IXFK)	-	1670W (Tc)	-55°C ~ 175°C (TJ)
G3F34MT12J-TR 1200V 34M TO-263-7 G3F SIC MOSFE GeneSiC Semiconductor	800	-	询价单	数据表	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	68A (Tc)	18V	45mOhm @ 26A, 18V	Surface Mount	4.3V @ 18mA	104 nC @ 18 V	1200 V	+22V, -10V	2418 pF @ 800 V	AEC-Q101	-	TO-263-7	Automotive	300W (Tc)	-55°C ~ 175°C (TJ)
G3F25MT06J-TR 650V 20M TO-263-7 G3F SIC MOSFET GeneSiC Semiconductor	800	-	询价单	数据表	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	108A (Tc)	15V, 18V	27.5mOhm @ 35A, 18V	Surface Mount	4.3V @ 15mA	108 nC @ 18 V	650 V	+22V, -10V	2939 pF @ 400 V	AEC-Q101	-	TO-263-7	Automotive	343W (Tc)	-55°C ~ 175°C (TJ)
SICW028N120A4-BP MOSFET N-CH 1200 V 80A TO247-4 Micro Commercial Co	1,800	-	询价单	数据表	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	80A (Tc)	16V, 20V	30mOhm @ 40A, 20V	Through Hole	3V @ 15mA	168 nC @ 18 V	1200 V	+22V, -5V	3570 pF @ 1000 V	-	-	TO-247-4	-	375W (Tc)	-55°C ~ 175°C (TJ)

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