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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
IXFX120N30P3

IXFX120N30P3

MOSFET N-CH 300V 120A PLUS247-3

Littelfuse Inc.

240 -
IXFX120N30P3

数据表

HiPerFET™, Polar3™ TO-247-3 Variant Tube Active N-Channel MOSFET (Metal Oxide) 120A (Tc) 10V 27mOhm @ 60A, 10V Through Hole 5V @ 4mA 150 nC @ 10 V 300 V ±20V 8630 pF @ 25 V - - PLUS247™-3 - 1130W (Tc) -55°C ~ 150°C (TJ)
STL8N65M5

STL8N65M5

MOSFET N-CH 650V 7A POWERFLAT

STMicroelectronics

5,459 -
STL8N65M5

数据表

MDmesh™ V 14-PowerVQFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 1.4A (Ta), 7A (Tc) 10V 600mOhm @ 3.5A, 10V Surface Mount 5V @ 250µA 15 nC @ 10 V 650 V ±25V 690 pF @ 100 V - - PowerFLAT™ (5x5) - 2.5W (Ta), 70W (Tc) 150°C (TJ)
IMBG40R011M2HXTMA1

IMBG40R011M2HXTMA1

SIC-MOS

Infineon Technologies

1,000 -
IMBG40R011M2HXTMA1

数据表

CoolSiC™ TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 13.4A (Ta), 133A (Tc) 15V, 18V 14.4mOhm @ 37.1A, 18V Surface Mount 5.6V @ 13.3mA 85 nC @ 18 V 400 V +23V, -7V 3770 pF @ 200 V - - PG-TO263-7-11 - 3.8W (Ta), 429W (Tc) -55°C ~ 175°C (TJ)
AOT480L

AOT480L

MOSFET N-CH 80V 15A/180A TO220

Alpha & Omega Semiconductor Inc.

3,144 -
AOT480L

数据表

SDMOS™ TO-220-3 Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 15A (Ta), 180A (Tc) 7V, 10V 4.5mOhm @ 20A, 10V Through Hole 4V @ 250µA 140 nC @ 10 V 80 V ±25V 7820 pF @ 40 V - - TO-220 - 1.9W (Ta), 333W (Tc) -55°C ~ 175°C (TJ)
NTH4L018N075SC1

NTH4L018N075SC1

SIC MOS TO247-4L 750V

onsemi

400 -
NTH4L018N075SC1

数据表

- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 140A (Tc) 15V, 18V 18mOhm @ 66A, 18V Through Hole 4.3V @ 22mA 262 nC @ 18 V 750 V +22V, -8V 5010 pF @ 375 V - - TO-247-4 - 500W (Tc) -55°C ~ 175°C (TJ)
IAUCN04S6N018TATMA1

IAUCN04S6N018TATMA1

MOSFET_(20V 40V)

Infineon Technologies

5,344 -
IAUCN04S6N018TATMA1

数据表

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
NVH4L060N090SC1

NVH4L060N090SC1

-

onsemi

1,349 -
NVH4L060N090SC1

数据表

- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 46A (Tc) 15V, 18V 84mOhm @ 20A, 15V Through Hole 4.3V @ 5mA 87 nC @ 15 V 900 V +22V, -8V 1770 pF @ 450 V AEC-Q101 - TO-247-4L Automotive 221W (Tc) -55°C ~ 175°C (TJ)
IRF3708STRL

IRF3708STRL

MOSFET N-CH 30V 62A D2PAK

Infineon Technologies

7,290 -
IRF3708STRL

数据表

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 62A (Tc) 2.8V, 10V 12mOhm @ 15A, 10V Surface Mount 2V @ 250µA 24 nC @ 4.5 V 30 V ±12V 2417 pF @ 15 V - - D2PAK - 87W (Tc) -55°C ~ 175°C (TJ)
NVH4L045N065SC1

NVH4L045N065SC1

SIC MOS TO247-4L 650V

onsemi

422 -
NVH4L045N065SC1

数据表

- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 55A (Tc) 15V, 18V 50mOhm @ 25A, 18V Through Hole 4.3V @ 8mA 105 nC @ 18 V 650 V +22V, -8V 1870 pF @ 325 V AEC-Q101 - TO-247-4L Automotive 187W (Tc) -55°C ~ 175°C (TJ)
STP24N65M2

STP24N65M2

MOSFET N-CH 650V 16A TO220

STMicroelectronics

2,417 -
STP24N65M2

数据表

MDmesh™ M2 TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 16A (Tc) 10V 230mOhm @ 8A, 10V Through Hole 4V @ 250µA 29 nC @ 10 V 650 V ±25V 1060 pF @ 100 V - - TO-220 - 150W (Tc) -55°C ~ 150°C (TJ)
IRF3704ZCS

IRF3704ZCS

MOSFET N-CH 20V 67A D2PAK

Infineon Technologies

4,214 -
IRF3704ZCS

数据表

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 67A (Tc) 4.5V, 10V 7.9mOhm @ 21A, 10V Surface Mount 2.55V @ 250µA 13 nC @ 4.5 V 20 V ±20V 1220 pF @ 10 V - - D2PAK - 57W (Tc) -55°C ~ 175°C (TJ)
IPA60R280E6XKSA1

IPA60R280E6XKSA1

MOSFET N-CH 600V 13.8A TO220-FP

Infineon Technologies

3,820 -
IPA60R280E6XKSA1

数据表

CoolMOS™ TO-220-3 Full Pack Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 13.8A (Tc) 10V 280mOhm @ 6.5A, 10V Through Hole 3.5V @ 430µA 43 nC @ 10 V 600 V ±20V 950 pF @ 100 V - - PG-TO220-FP - 32W (Tc) -55°C ~ 150°C (TJ)
NVMFS5C430NWFAFT3G

NVMFS5C430NWFAFT3G

MOSFET N-CH 40V 35A/185A 5DFN

onsemi

4,460 -
NVMFS5C430NWFAFT3G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 35A (Ta), 185A (Tc) 10V 1.7mOhm @ 50A, 10V Surface Mount 3.5V @ 250µA 47 nC @ 10 V 40 V ±20V 3300 pF @ 25 V AEC-Q101 - 5-DFN (5x6) (8-SOFL) Automotive 3.8W (Ta), 106W (Tc) -55°C ~ 175°C (TJ)
SCTW60N120G2

SCTW60N120G2

DISCRETE

STMicroelectronics

600 -
SCTW60N120G2

数据表

- TO-247-3 Bulk Active N-Channel MOSFET (Metal Oxide) 60A (Tc) 18V 52mOhm @ 30A, 18V Through Hole 5V @ 1mA 94 nC @ 8 V 1200 V +18V, -5V 1969 pF @ 800 V - - HiP247™ - 389W (Tc) -55°C ~ 200°C (TJ)
IPI47N10S33AKSA1

IPI47N10S33AKSA1

MOSFET N-CH 100V 47A TO262-3

Infineon Technologies

8,840 -
IPI47N10S33AKSA1

数据表

SIPMOS® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 47A (Tc) 10V 33mOhm @ 33A, 10V Through Hole 4V @ 2mA 105 nC @ 10 V 100 V ±20V 2500 pF @ 25 V - - PG-TO262-3 - 175W (Tc) -55°C ~ 175°C (TJ)
IPI47N10SL26AKSA1

IPI47N10SL26AKSA1

MOSFET N-CH 100V 47A TO262-3

Infineon Technologies

4,821 -
IPI47N10SL26AKSA1

数据表

SIPMOS® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 47A (Tc) 4.5V, 10V 26mOhm @ 33A, 10V Through Hole 2V @ 2mA 135 nC @ 10 V 100 V ±20V 2500 pF @ 25 V - - PG-TO262-3 - 175W (Tc) -55°C ~ 175°C (TJ)
AIMZA75R027M1HXKSA1

AIMZA75R027M1HXKSA1

IGBT

Infineon Technologies

216 -
AIMZA75R027M1HXKSA1

数据表

CoolSiC™ TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 60A (Tj) 15V, 20V 25mOhm @ 24.5A, 20V Through Hole 5.6V @ 8.8mA 49 nC @ 18 V 750 V +23V, -5V 1668 pF @ 500 V AEC-Q101 - PG-TO247-4 Automotive 234W (Tc) -55°C ~ 175°C (TJ)
STD7N95K5AG

STD7N95K5AG

DISCRETE

STMicroelectronics

3,583 -
STD7N95K5AG

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 9A (Tc) 10V 1.25Ohm @ 3A, 10V Surface Mount 5V @ 100µA 9.6 nC @ 10 V 950 V ±30V 430 pF @ 100 V AEC-Q101 - TO-252 (DPAK) Automotive 110W (Tc) -55°C ~ 150°C (TJ)
IPDQ60R020CFD7XTMA1

IPDQ60R020CFD7XTMA1

HIGH POWER_NEW

Infineon Technologies

750 -
IPDQ60R020CFD7XTMA1

数据表

CoolMOS™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 112A (Tc) 10V 20mOhm @ 42.4A, 10V Surface Mount 4.5V @ 2.12mA 186 nC @ 10 V 600 V ±20V 7395 pF @ 400 V - - PG-HDSOP-22-1 - 543W (Tc) -55°C ~ 150°C (TJ)
STB15NK50ZT4

STB15NK50ZT4

MOSFET N-CH 500V 14A D2PAK

STMicroelectronics

9,454 -
STB15NK50ZT4

数据表

SuperMESH™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 14A (Tc) 10V 340mOhm @ 7A, 10V Surface Mount 4.5V @ 100µA 106 nC @ 10 V 500 V ±30V 2260 pF @ 25 V - - D2PAK - 160W (Tc) -50°C ~ 150°C (TJ)
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