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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
SICW025N120H-BP

SICW025N120H-BP

SIC MOSFET,TO-247AB

Micro Commercial Co

360 -
SICW025N120H-BP

数据表

- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 86A (Tc) 20V 33mOhm @ 40A, 20V Through Hole 4.5V @ 50mA 305 nC @ 20 V 1200 V +25V, -10V 4909 pF @ 800 V - - TO-247AB - 375W (Tc) -55°C ~ 175°C (TJ)
IMZC120R022M2HXKSA1

IMZC120R022M2HXKSA1

IMZC120R022M2HXKSA1

Infineon Technologies

240 -
IMZC120R022M2HXKSA1

数据表

CoolSiC™ TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 80A (Tc) 15V, 18V 22mOhm @ 32A, 18V Through Hole 5.1V @ 10.1mA 71 nC @ 18 V 1200 V +23V, -7V 2330 pF @ 800 V - - PG-TO247-4-17 - 329W (Tc) -55°C ~ 175°C (TJ)
STB22NS25ZT4

STB22NS25ZT4

MOSFET N-CH 250V 22A D2PAK

STMicroelectronics

2,522 -
STB22NS25ZT4

数据表

MESH OVERLAY™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 22A (Tc) 10V 150mOhm @ 11A, 10V Surface Mount 4V @ 250µA 151 nC @ 10 V 250 V ±20V 2400 pF @ 25 V - - D2PAK - 135W (Tc) -55°C ~ 150°C (TJ)
STP60N55F3

STP60N55F3

MOSFET N-CH 55V 80A TO220AB

STMicroelectronics

6,246 -
STP60N55F3

数据表

STripFET™ III TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 80A (Tc) 10V 8.5mOhm @ 32A, 10V Through Hole 4V @ 250µA 45 nC @ 10 V 55 V ±20V 2200 pF @ 25 V - - TO-220 - 110W (Tc) -55°C ~ 175°C (TJ)
STP75NF68

STP75NF68

MOSFET N-CH 68V 80A TO220-3

STMicroelectronics

5,666 -
STP75NF68

数据表

STripFET™ II TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 80A (Tc) 10V 14mOhm @ 40A, 10V Through Hole 4V @ 250µA 75 nC @ 10 V 68 V ±20V 2550 pF @ 25 V - - TO-220 - 190W (Tc) -55°C ~ 175°C (TJ)
IXFA4N60P3

IXFA4N60P3

MOSFET N-CH 600V 4A TO263

IXYS

7,594 -
IXFA4N60P3

数据表

HiPerFET™, Polar3™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 4A (Tc) 10V 2.2Ohm @ 2A, 10V Surface Mount 5V @ 250µA 6.9 nC @ 10 V 600 V ±30V 365 pF @ 25 V - - TO-263AA (IXFA) - 114W (Tc) -55°C ~ 150°C (TJ)
BSP170PE6327

BSP170PE6327

MOSFET P-CH 60V 1.9A SOT223-4

Infineon Technologies

2,971 -
BSP170PE6327

数据表

SIPMOS® TO-261-4, TO-261AA Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 1.9A (Ta) 10V 300mOhm @ 1.9A, 10V Surface Mount 4V @ 250µA 14 nC @ 10 V 60 V ±20V 410 pF @ 25 V - - PG-SOT223-4 - 1.8W (Ta) -55°C ~ 150°C (TJ)
ZVP2120ASTZ

ZVP2120ASTZ

MOSFET P-CH 200V 120MA TO92-3

Diodes Incorporated

6,075 -
ZVP2120ASTZ

数据表

- TO-226-3, TO-92-3 (TO-226AA) Formed Leads Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 120mA (Ta) 10V 25Ohm @ 150mA, 10V Through Hole 3.5V @ 1mA - 200 V ±20V 100 pF @ 25 V - - TO-92 - 700mW (Ta) -55°C ~ 150°C (TJ)
SI1067X-T1-E3

SI1067X-T1-E3

MOSFET P-CH 20V 1.06A SC89-6

Vishay Siliconix

3,460 -
SI1067X-T1-E3

数据表

TrenchFET® SOT-563, SOT-666 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 1.06A (Ta) 1.8V, 4.5V 150mOhm @ 1.06A, 4.5V Surface Mount 950mV @ 250µA 9.3 nC @ 5 V 20 V ±8V 375 pF @ 10 V - - SC-89 (SOT-563F) - 236mW (Ta) -55°C ~ 150°C (TJ)
SI4435BDY-T1-E3

SI4435BDY-T1-E3

MOSFET P-CH 30V 7A 8SO

Vishay Siliconix

5,075 -
SI4435BDY-T1-E3

数据表

TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 7A (Ta) 4.5V, 10V 20mOhm @ 9.1A, 10V Surface Mount 3V @ 250µA 70 nC @ 10 V 30 V ±20V - - - 8-SOIC - 1.5W (Ta) -55°C ~ 150°C (TJ)
SI8415DB-T1-E1

SI8415DB-T1-E1

MOSFET P-CH 12V 5.3A 4MICROFOOT

Vishay Siliconix

4,997 -
SI8415DB-T1-E1

数据表

TrenchFET® 4-XFBGA, CSPBGA Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 5.3A (Ta) 1.8V, 4.5V 37mOhm @ 1A, 4.5V Surface Mount 1V @ 250µA 30 nC @ 4.5 V 12 V ±8V - - - 4-Microfoot - 1.47W (Ta) -55°C ~ 150°C (TJ)
SI9434BDY-T1-E3

SI9434BDY-T1-E3

MOSFET P-CH 20V 4.5A 8SO

Vishay Siliconix

7,758 -
SI9434BDY-T1-E3

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 4.5A (Ta) 2.5V, 4.5V 40mOhm @ 6.3A, 4.5V Surface Mount 1.5V @ 250µA 18 nC @ 4.5 V 20 V ±8V - - - 8-SOIC - 1.3W (Ta) -55°C ~ 150°C (TJ)
SICW025N120H4-BP

SICW025N120H4-BP

SIC MOSFET,TO-247-4

Micro Commercial Co

350 -
SICW025N120H4-BP

数据表

- TO-247-4 Bulk Active N-Channel SiCFET (Silicon Carbide) 86A (Tc) 20V 33mOhm @ 40A, 20V Through Hole 4.5V @ 50mA 305 nC @ 20 V 1200 V +20V, -5V 4909 pF @ 800 V - - TO-247-4 - 375W (Tc) -55°C ~ 175°C (TJ)
STWA65N023M9

STWA65N023M9

N-CHANNEL 650 V, 19.9 MOHM TYP.,

STMicroelectronics

626 -
STWA65N023M9

数据表

- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 95A (Tc) 10V 23mOhm @ 48A, 10V Through Hole 4.2V @ 250µA 230 nC @ 10 V 650 V ±30V 8844 pF @ 400 V - - TO-247 Long Leads - 463W (Tc) -55°C ~ 150°C (TJ)
C3M0120100J-TR

C3M0120100J-TR

SIC, MOSFET, 120M, 1000V, TO-263

Wolfspeed, Inc.

780 -
C3M0120100J-TR

数据表

C3M™ TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Last Time Buy N-Channel SiCFET (Silicon Carbide) 22A (Tc) 15V 155mOhm @ 15A, 15V Surface Mount 3.5V @ 3mA 18 nC @ 15 V 1000 V +15V, -4V 414 pF @ 600 V - - D2PAK-7 - 83W (Tc) -55°C ~ 150°C (TJ)
E3M0075120J2-TR

E3M0075120J2-TR

75m, 1200V SiC FET, TO-263-7 XL

Wolfspeed, Inc.

498 -
E3M0075120J2-TR

数据表

E TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 34A (Tc) 15V 97.5mOhm @ 17.9A, 15V Surface Mount 3.8V @ 5mA 52 nC @ 15 V 1200 V +19V, -8V 1480 pF @ 1000 V AEC-Q101 - TO-263-7 Automotive 172W (Tc) -55°C ~ 175°C (TJ)
C3M0060065J-TR

C3M0060065J-TR

SIC, MOSFET, 60M, 650V, TO-263-7

Wolfspeed, Inc.

409 -
C3M0060065J-TR

数据表

C3M™ TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 36A (Tc) 15V 79mOhm @ 13.2A, 15V Surface Mount 3.6V @ 5mA 46 nC @ 15 V 650 V +15V, -4V 1020 pF @ 600 V - - TO-263-7 - 136W (Tc) -40°C ~ 175°C (TJ)
G3R40MT12J-TR

G3R40MT12J-TR

1200V 40M TO-263-7 G3R SIC MOSFE

GeneSiC Semiconductor

630 -
G3R40MT12J-TR

数据表

G3R™, LoRing™ TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 66A (Tc) 15V, 18V 45mOhm @ 35A, 18V Surface Mount 2.7V @ 18mA 88 nC @ 15 V 1200 V +22V, -10V 2897 pF @ 800 V - - TO-263-7 - 330W (Tc) -55°C ~ 175°C (TJ)
BSC100N03MSGATMA1

BSC100N03MSGATMA1

MOSFET N-CH 30V 12A/44A TDSON

Infineon Technologies

5,802 -
BSC100N03MSGATMA1

数据表

OptiMOS™ 8-PowerTDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 12A (Ta), 44A (Tc) 4.5V, 10V 10mOhm @ 30A, 10V Surface Mount 2V @ 250µA 23 nC @ 10 V 30 V ±20V 1700 pF @ 15 V - - PG-TDSON-8-5 - 2.5W (Ta), 30W (Tc) -55°C ~ 150°C (TJ)
IMDQ75R020M1HXUMA1

IMDQ75R020M1HXUMA1

IMDQ75R020M1HXUMA1

Infineon Technologies

750 -
IMDQ75R020M1HXUMA1

数据表

CoolSiC™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 81A (Tj) 15V, 20V 18mOhm @ 32.5A, 20V Surface Mount 5.6V @ 11.7mA 67 nC @ 18 V 750 V +20V, -2V 2217 pF @ 500 V - - PG-HDSOP-22-1 - 326W (Tc) -55°C ~ 175°C (TJ)
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