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场效应晶体管(FETs)、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗(最大值) | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SICW025N120H-BPSIC MOSFET,TO-247AB |
360 | - |
|
数据表 |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 86A (Tc) | 20V | 33mOhm @ 40A, 20V | Through Hole | 4.5V @ 50mA | 305 nC @ 20 V | 1200 V | +25V, -10V | 4909 pF @ 800 V | - | - | TO-247AB | - | 375W (Tc) | -55°C ~ 175°C (TJ) |
|
IMZC120R022M2HXKSA1IMZC120R022M2HXKSA1 |
240 | - |
|
数据表 |
CoolSiC™ | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 80A (Tc) | 15V, 18V | 22mOhm @ 32A, 18V | Through Hole | 5.1V @ 10.1mA | 71 nC @ 18 V | 1200 V | +23V, -7V | 2330 pF @ 800 V | - | - | PG-TO247-4-17 | - | 329W (Tc) | -55°C ~ 175°C (TJ) |
|
STB22NS25ZT4MOSFET N-CH 250V 22A D2PAK |
2,522 | - |
|
数据表 |
MESH OVERLAY™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 22A (Tc) | 10V | 150mOhm @ 11A, 10V | Surface Mount | 4V @ 250µA | 151 nC @ 10 V | 250 V | ±20V | 2400 pF @ 25 V | - | - | D2PAK | - | 135W (Tc) | -55°C ~ 150°C (TJ) |
|
|
STP60N55F3MOSFET N-CH 55V 80A TO220AB |
6,246 | - |
|
数据表 |
STripFET™ III | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80A (Tc) | 10V | 8.5mOhm @ 32A, 10V | Through Hole | 4V @ 250µA | 45 nC @ 10 V | 55 V | ±20V | 2200 pF @ 25 V | - | - | TO-220 | - | 110W (Tc) | -55°C ~ 175°C (TJ) |
|
|
STP75NF68MOSFET N-CH 68V 80A TO220-3 |
5,666 | - |
|
数据表 |
STripFET™ II | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80A (Tc) | 10V | 14mOhm @ 40A, 10V | Through Hole | 4V @ 250µA | 75 nC @ 10 V | 68 V | ±20V | 2550 pF @ 25 V | - | - | TO-220 | - | 190W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IXFA4N60P3MOSFET N-CH 600V 4A TO263 |
7,594 | - |
|
数据表 |
HiPerFET™, Polar3™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 4A (Tc) | 10V | 2.2Ohm @ 2A, 10V | Surface Mount | 5V @ 250µA | 6.9 nC @ 10 V | 600 V | ±30V | 365 pF @ 25 V | - | - | TO-263AA (IXFA) | - | 114W (Tc) | -55°C ~ 150°C (TJ) |
|
BSP170PE6327MOSFET P-CH 60V 1.9A SOT223-4 |
2,971 | - |
|
数据表 |
SIPMOS® | TO-261-4, TO-261AA | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 1.9A (Ta) | 10V | 300mOhm @ 1.9A, 10V | Surface Mount | 4V @ 250µA | 14 nC @ 10 V | 60 V | ±20V | 410 pF @ 25 V | - | - | PG-SOT223-4 | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) |
|
ZVP2120ASTZMOSFET P-CH 200V 120MA TO92-3 |
6,075 | - |
|
数据表 |
- | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | Cut Tape (CT) | Active | P-Channel | MOSFET (Metal Oxide) | 120mA (Ta) | 10V | 25Ohm @ 150mA, 10V | Through Hole | 3.5V @ 1mA | - | 200 V | ±20V | 100 pF @ 25 V | - | - | TO-92 | - | 700mW (Ta) | -55°C ~ 150°C (TJ) |
|
SI1067X-T1-E3MOSFET P-CH 20V 1.06A SC89-6 |
3,460 | - |
|
数据表 |
TrenchFET® | SOT-563, SOT-666 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 1.06A (Ta) | 1.8V, 4.5V | 150mOhm @ 1.06A, 4.5V | Surface Mount | 950mV @ 250µA | 9.3 nC @ 5 V | 20 V | ±8V | 375 pF @ 10 V | - | - | SC-89 (SOT-563F) | - | 236mW (Ta) | -55°C ~ 150°C (TJ) |
|
SI4435BDY-T1-E3MOSFET P-CH 30V 7A 8SO |
5,075 | - |
|
数据表 |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 7A (Ta) | 4.5V, 10V | 20mOhm @ 9.1A, 10V | Surface Mount | 3V @ 250µA | 70 nC @ 10 V | 30 V | ±20V | - | - | - | 8-SOIC | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) |
|
SI8415DB-T1-E1MOSFET P-CH 12V 5.3A 4MICROFOOT |
4,997 | - |
|
数据表 |
TrenchFET® | 4-XFBGA, CSPBGA | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 5.3A (Ta) | 1.8V, 4.5V | 37mOhm @ 1A, 4.5V | Surface Mount | 1V @ 250µA | 30 nC @ 4.5 V | 12 V | ±8V | - | - | - | 4-Microfoot | - | 1.47W (Ta) | -55°C ~ 150°C (TJ) |
|
SI9434BDY-T1-E3MOSFET P-CH 20V 4.5A 8SO |
7,758 | - |
|
数据表 |
- | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 4.5A (Ta) | 2.5V, 4.5V | 40mOhm @ 6.3A, 4.5V | Surface Mount | 1.5V @ 250µA | 18 nC @ 4.5 V | 20 V | ±8V | - | - | - | 8-SOIC | - | 1.3W (Ta) | -55°C ~ 150°C (TJ) |
|
SICW025N120H4-BPSIC MOSFET,TO-247-4 |
350 | - |
|
数据表 |
- | TO-247-4 | Bulk | Active | N-Channel | SiCFET (Silicon Carbide) | 86A (Tc) | 20V | 33mOhm @ 40A, 20V | Through Hole | 4.5V @ 50mA | 305 nC @ 20 V | 1200 V | +20V, -5V | 4909 pF @ 800 V | - | - | TO-247-4 | - | 375W (Tc) | -55°C ~ 175°C (TJ) |
|
STWA65N023M9N-CHANNEL 650 V, 19.9 MOHM TYP., |
626 | - |
|
数据表 |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 95A (Tc) | 10V | 23mOhm @ 48A, 10V | Through Hole | 4.2V @ 250µA | 230 nC @ 10 V | 650 V | ±30V | 8844 pF @ 400 V | - | - | TO-247 Long Leads | - | 463W (Tc) | -55°C ~ 150°C (TJ) |
|
C3M0120100J-TRSIC, MOSFET, 120M, 1000V, TO-263 |
780 | - |
|
数据表 |
C3M™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Last Time Buy | N-Channel | SiCFET (Silicon Carbide) | 22A (Tc) | 15V | 155mOhm @ 15A, 15V | Surface Mount | 3.5V @ 3mA | 18 nC @ 15 V | 1000 V | +15V, -4V | 414 pF @ 600 V | - | - | D2PAK-7 | - | 83W (Tc) | -55°C ~ 150°C (TJ) |
|
E3M0075120J2-TR75m, 1200V SiC FET, TO-263-7 XL |
498 | - |
|
数据表 |
E | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 34A (Tc) | 15V | 97.5mOhm @ 17.9A, 15V | Surface Mount | 3.8V @ 5mA | 52 nC @ 15 V | 1200 V | +19V, -8V | 1480 pF @ 1000 V | AEC-Q101 | - | TO-263-7 | Automotive | 172W (Tc) | -55°C ~ 175°C (TJ) |
|
C3M0060065J-TRSIC, MOSFET, 60M, 650V, TO-263-7 |
409 | - |
|
数据表 |
C3M™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 36A (Tc) | 15V | 79mOhm @ 13.2A, 15V | Surface Mount | 3.6V @ 5mA | 46 nC @ 15 V | 650 V | +15V, -4V | 1020 pF @ 600 V | - | - | TO-263-7 | - | 136W (Tc) | -40°C ~ 175°C (TJ) |
|
G3R40MT12J-TR1200V 40M TO-263-7 G3R SIC MOSFE |
630 | - |
|
数据表 |
G3R™, LoRing™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 66A (Tc) | 15V, 18V | 45mOhm @ 35A, 18V | Surface Mount | 2.7V @ 18mA | 88 nC @ 15 V | 1200 V | +22V, -10V | 2897 pF @ 800 V | - | - | TO-263-7 | - | 330W (Tc) | -55°C ~ 175°C (TJ) |
|
BSC100N03MSGATMA1MOSFET N-CH 30V 12A/44A TDSON |
5,802 | - |
|
数据表 |
OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 12A (Ta), 44A (Tc) | 4.5V, 10V | 10mOhm @ 30A, 10V | Surface Mount | 2V @ 250µA | 23 nC @ 10 V | 30 V | ±20V | 1700 pF @ 15 V | - | - | PG-TDSON-8-5 | - | 2.5W (Ta), 30W (Tc) | -55°C ~ 150°C (TJ) |
|
IMDQ75R020M1HXUMA1IMDQ75R020M1HXUMA1 |
750 | - |
|
数据表 |
CoolSiC™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 81A (Tj) | 15V, 20V | 18mOhm @ 32.5A, 20V | Surface Mount | 5.6V @ 11.7mA | 67 nC @ 18 V | 750 V | +20V, -2V | 2217 pF @ 500 V | - | - | PG-HDSOP-22-1 | - | 326W (Tc) | -55°C ~ 175°C (TJ) |
