订单满￥1000免运费

富聪科技 | 全球电子元器件分销商

24小时咨询热线 0755 83957878

首页 > 产品 > 分立半导体产品 > 晶体管 > 场效应晶体管（FETs）、金属氧化物半导体场效应晶体管（MOSFETs） > 场效应晶体管（FETs）、MOSFETs

场效应晶体管（FETs）、MOSFETs

制造商	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
Alpha & Omega Semiconductor Inc. Analog Power Inc. ANBON SEMICONDUCTOR (INT'L) LIMITED APSEMI Bruckewell Cambridge GaN Devices Central Semiconductor Corp Coherent Corp Comchip Technology CoolCAD Diodes Incorporated Diotec Semiconductor EPC EPC Space, LLC EVVO Fairchild Semiconductor Fairchild/ON Semiconductor fastSiC Flip Electronics GaNPower GeneSiC Semiconductor Goford Semiconductor Good-Ark Semiconductor Harris Corporation Honeywell Aerospace HY Electronic (Cayman) Limited IceMOS Technology Infineon Technologies International Rectifier Intersil Inventchip IXYS IXYS Integrated Circuits Division Linear Integrated Systems, Inc. Littelfuse Inc. MaxLinear, Inc. MDD Meritek Micro Commercial Co Microchip Technology Microsemi Corporation Motorola National Semiconductor NEC Corporation Nexperia USA Inc. NextGen Components Group NoMIS Power NovuSem Nuvoton Technology Corporation NXP Semiconductors onsemi Panasonic - BSG Panjit International Inc. PN Junction Semiconductor Qorvo Quest Semi Rectron USA Renesas ROHM Semiconductor Sanken Electric USA Inc. Sanyo SemiQ Shenzhen Slkormicro Semicon Co., Ltd. Siemens Siliconix Skyworks Solutions Inc. SMC Diode Solutions SparkFun Electronics STMicroelectronics Taiwan Semiconductor Corporation Texas Instruments Torex Semiconductor Ltd Toshiba Semiconductor and Storage Transphorm TT Electronics/Optek Technology UMW Venkel Vicor Corporation Vishay Vishay General Semiconductor - Diodes Division Vishay Siliconix WeEn Semiconductors Wise-Integration Wolfspeed, Inc. YAGEO XSemi

全部重置

全部应用

结果

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
IRF9410TR MOSFET N-CH 30V 7A 8SO Infineon Technologies	6,955	-	询价单	数据表	HEXFET®	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	7A (Ta)	4.5V, 10V	30mOhm @ 7A, 10V	Surface Mount	1V @ 250µA	27 nC @ 10 V	30 V	±20V	550 pF @ 25 V	-	-	8-SO	-	2.5W (Ta)	-55°C ~ 150°C (TJ)
IRF6616 MOSFET N-CH 30V 19A DIRECTFET Infineon Technologies	3,309	-	询价单	数据表	HEXFET®	DirectFET™ Isometric MX	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	19A (Ta), 106A (Tc)	4.5V, 10V	5mOhm @ 19A, 10V	Surface Mount	2.25V @ 250µA	44 nC @ 4.5 V	30 V	±20V	3765 pF @ 20 V	-	-	DIRECTFET™ MX	-	2.8W (Ta), 89W (Tc)	-40°C ~ 150°C (TJ)
SI4456DY-T1-GE3 MOSFET N-CH 40V 33A 8SO Vishay Siliconix	9,683	-	询价单	数据表	TrenchFET®	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	33A (Tc)	4.5V, 10V	3.8mOhm @ 20A, 10V	Surface Mount	2.8V @ 250µA	122 nC @ 10 V	40 V	±20V	5670 pF @ 20 V	-	-	8-SOIC	-	3.5W (Ta), 7.8W (Tc)	-55°C ~ 150°C (TJ)
SI6404DQ-T1-GE3 MOSFET N-CH 30V 8.6A 8TSSOP Vishay Siliconix	4,486	-	询价单	数据表	TrenchFET®	8-TSSOP (0.173", 4.40mm Width)	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	8.6A (Ta)	2.5V, 10V	9mOhm @ 11A, 10V	Surface Mount	600mV @ 250µA (Min)	48 nC @ 4.5 V	30 V	±12V	-	-	-	8-TSSOP	-	1.08W (Ta)	-55°C ~ 150°C (TJ)
AOT15S60L MOSFET N-CH 600V 15A TO220 Alpha & Omega Semiconductor Inc.	7,383	-	询价单	数据表	aMOS™	TO-220-3	Tube	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	15A (Tc)	10V	290mOhm @ 7.5A, 10V	Through Hole	3.8V @ 250µA	15.6 nC @ 10 V	600 V	±30V	372 pF @ 100 V	-	-	TO-220	-	208W (Tc)	-55°C ~ 150°C (TJ)
SCT060HU75G3AG AUTOMOTIVE-GRADE SILICON CARBIDE STMicroelectronics	582	-	询价单	数据表	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	30A (Tc)	15V, 18V	78mOhm @ 15A, 18V	Surface Mount	4.2V @ 1mA	29 nC @ 18 V	750 V	4.2V @ 1mA	680 pF @ 400 V	-	-	HU3PAK	-	185W (Tc)	-55°C ~ 175°C (TJ)
IPZA60R016CM8XKSA1 IPZA60R016CM8XKSA1 Infineon Technologies	391	-	询价单	数据表	CoolMOS™	TO-247-4	Tube	Active	N-Channel	MOSFET (Metal Oxide)	123A (Tc)	10V	16mOhm @ 62.5A, 10V	Through Hole	4.7V @ 1.48mA	171 nC @ 10 V	600 V	±20V	7545 pF @ 400 V	-	-	PG-TO247-4-U02	-	521W (Tc)	-55°C ~ 150°C (TJ)
NVBG023N065M3S SIC MOS D2PAK-7L 23MOHM 650V M3S onsemi	1,600	-	询价单	数据表	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	70A (Tc)	15V, 18V	33mOhm @ 20A, 18V	Surface Mount	4V @ 10mA	69 nC @ 18 V	650 V	+22V, -8V	1951 pF @ 400 V	AEC-Q101	-	D2PAK-7	Automotive	263W (Tc)	-55°C ~ 175°C (TJ)
G3F33MT06K 650V 27M TO-247-4 G3F SIC MOSFET GeneSiC Semiconductor	600	-	询价单	数据表	-	TO-247-4	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	74A (Tc)	15V, 18V	38mOhm @ 26A, 18V	Through Hole	4.3V @ 12mA	81 nC @ 18 V	650 V	+22V, -10V	2394 pF @ 400 V	AEC-Q101	-	TO-247-4	Automotive	227W (Tc)	-55°C ~ 175°C (TJ)
NVHL060N065SC1 SIC MOS TO247-3L 650V onsemi	450	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	47A (Tc)	15V, 18V	70mOhm @ 20A, 18V	Through Hole	4.3V @ 6.5mA	74 nC @ 18 V	650 V	+22V, -8V	1473 pF @ 325 V	AEC-Q101	-	TO-247-3	Automotive	176W (Tc)	-55°C ~ 175°C (TJ)
GS66502B-MR GS66502B-MR Infineon Technologies Canada Inc.	208	-	询价单	数据表	-	3-SMD, No Lead	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	7.5A (Tc)	6V	260mOhm @ 2.25A, 6V	Surface Mount	2.6V @ 1.75mA	1.6 nC @ 6 V	650 V	+7V, -10V	60 pF @ 400 V	-	-	-	-	-	-55°C ~ 150°C (TJ)
TW048Z65C,S1F G3 650V SIC-MOSFET TO-247-4L 48 Toshiba Semiconductor and Storage	243	-	询价单	数据表	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	40A (Tc)	18V	69mOhm @ 20A, 18V	Through Hole	5V @ 1.6mA	41 nC @ 18 V	650 V	+25V, -10V	1362 pF @ 400 V	-	-	TO-247-4L(X)	-	132W (Tc)	175°C
AIMBG120R060M1XTMA1 SIC_DISCRETE Infineon Technologies	959	-	询价单	数据表	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	38A (Tc)	18V, 20V	75mOhm @ 13A, 20V	Surface Mount	5.1V @ 4.3mA	32 nC @ 20 V	1200 V	+23V, -5V	880 pF @ 800 V	AEC-Q101	-	PG-TO263-7-12	Automotive	202W (Tc)	-55°C ~ 175°C (TJ)
NVHL023N065M3S SIC MOS TO247-3L 23MOHM 650V M3S onsemi	440	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	70A (Tc)	15V, 18V	33mOhm @ 20A, 18V	Through Hole	4V @ 10mA	69 nC @ 18 V	650 V	+22V, -8V	1952 pF @ 400 V	AEC-Q101	-	TO-247-3	Automotive	263W (Tc)	-55°C ~ 175°C (TJ)
SCTH35N65G2V-7AG SICFET N-CH 650V 45A H2PAK-7 STMicroelectronics	1,000	-	询价单	数据表	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	45A (Tc)	18V, 20V	67mOhm @ 20A, 20V	Surface Mount	5V @ 1mA	73 nC @ 20 V	650 V	+22V, -10V	1370 pF @ 400 V	AEC-Q101	-	H2PAK-7	Automotive	208W (Tc)	-55°C ~ 175°C (TJ)
IMTA65R020M2HXTMA1 SILICON CARBIDE MOSFET Infineon Technologies	371	-	询价单	数据表	-	-	Tape & Reel (TR)	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SCT4026DWAHRTL 750V, 51A, 7-PIN SMD, TRENCH-STR Rohm Semiconductor	980	-	询价单	数据表	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	51A (Tc)	18V	34mOhm @ 29A, 18V	Surface Mount	4.8V @ 15.4mA	94 nC @ 18 V	750 V	+21V, -4V	2320 pF @ 500 V	AEC-Q101	-	TO-263-7LA	Automotive	-	175°C (TJ)
C3M0040120K1 MOSFET N-CH 1200V 57A TO247-4L Wolfspeed, Inc.	283	-	询价单	数据表	-	TO-247-4	Bulk	Active	N-Channel	SiCFET (Silicon Carbide)	57A (Tc)	15V	53mOhm @ 31.9A, 15V	Through Hole	3.8V @ 8.377mA	94 nC @ 15 V	1200 V	+19V, -8V	2726 pF @ 1000 V	-	-	TO-247-4L	-	242W (Tc)	-40°C ~ 175°C (TJ)
FCH029N65S3-F155 MOSFET N-CH 650V 75A TO247-3 onsemi	399	-	询价单	数据表	SuperFET® III	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	75A (Tc)	-	29mOhm @ 37.5A, 10V	Through Hole	4.5V @ 7mA	201 nC @ 10 V	650 V	±30V	6340 pF @ 400 V	-	-	TO-247-3	-	463W (Tc)	-55°C ~ 150°C (TJ)
IMW65R020M2HXKSA1 SILICON CARBIDE MOSFET Infineon Technologies	163	-	询价单	数据表	CoolSiC™ Gen 2	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	83A (Tc)	15V, 20V	18mOhm @ 46.9A, 20V	Through Hole	5.6V @ 9.5mA	57 nC @ 18 V	650 V	+23V, -7V	2038 pF @ 400 V	-	-	PG-TO247-3-40	-	273W (Tc)	-55°C ~ 175°C (TJ)

共 36322 条记录«上一页 1... 380 381 382 383384385 386 387...1817 下一页»

搜索

产品

电话

用户

[email protected]

0755 83957878