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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
IRLR2908TRLPBF

IRLR2908TRLPBF

MOSFET N-CH 80V 30A DPAK

Infineon Technologies

9,029 -
IRLR2908TRLPBF

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30A (Tc) 4.5V, 10V 28mOhm @ 23A, 10V Surface Mount 2.5V @ 250µA 33 nC @ 4.5 V 80 V ±16V 1890 pF @ 25 V - - TO-252AA (DPAK) - 120W (Tc) -55°C ~ 175°C (TJ)
TPCC8002-H(TE12L,Q

TPCC8002-H(TE12L,Q

MOSFET N-CH 30V 22A 8TSON

Toshiba Semiconductor and Storage

6,876 -
TPCC8002-H(TE12L,Q

数据表

U-MOSV-H 8-VDFN Exposed Pad Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 22A (Ta) 4.5V, 10V 8.3mOhm @ 11A, 10V Surface Mount 2.5V @ 1mA 27 nC @ 10 V 30 V ±20V 2500 pF @ 10 V - - 8-TSON Advance (3.3x3.3) - 700mW (Ta), 30W (Tc) 150°C (TJ)
AUIRLR024ZTRL

AUIRLR024ZTRL

MOSFET N CH 55V 16A DPAK

Infineon Technologies

5,292 -
AUIRLR024ZTRL

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 16A (Tc) 4.5V, 10V 58mOhm @ 9.6A, 10V Surface Mount 3V @ 250µA 9.9 nC @ 5 V 55 V ±16V 380 pF @ 25 V - - TO-252AA (DPAK) - 35W (Tc) -55°C ~ 175°C (TJ)
FDD850N10LD

FDD850N10LD

MOSFET N-CH 100V 15.3A TO252-4L

onsemi

3,835 -
FDD850N10LD

数据表

PowerTrench® TO-252-5, DPAK (4 Leads + Tab), TO-252AD Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 15.3A (Tc) 5V, 10V 75mOhm @ 12A, 10V Surface Mount 2.5V @ 250µA 28.9 nC @ 10 V 100 V ±20V 1465 pF @ 25 V - - TO-252 (DPAK) - 42W (Tc) -55°C ~ 150°C (TJ)
AON6232A

AON6232A

MOSFET N-CH 40V 35A/85A 8DFN

Alpha & Omega Semiconductor Inc.

9,298 -
AON6232A

数据表

- 8-PowerSMD, Flat Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 35A (Ta), 85A (Tc) 4.5V, 10V 2.9mOhm @ 20A, 10V Surface Mount 2.5V @ 250µA 60 nC @ 10 V 40 V ±20V 3250 pF @ 20 V - - 8-DFN (5x6) - 6.2W (Ta), 113.5W (Tc) -55°C ~ 150°C (TJ)
IPD50R800CEAUMA1

IPD50R800CEAUMA1

CONSUMER

Infineon Technologies

8,984 -
IPD50R800CEAUMA1

数据表

CoolMOS™ CE TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 7.6A (Tc) 13V 800mOhm @ 1.5A, 13V Surface Mount 3.5V @ 130µA 12.4 nC @ 10 V 500 V ±20V 280 pF @ 100 V - - PG-TO252-2 - 60W (Tc) -55°C ~ 150°C (TJ)
PJD16N06A-AU_L2_000A1

PJD16N06A-AU_L2_000A1

60V N-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

7,028 -
PJD16N06A-AU_L2_000A1

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 4.4A (Ta), 16A (Tc) 4.5V, 10V 50mOhm @ 8A, 10V Surface Mount 2.5V @ 250µA 14 nC @ 10 V 60 V ±20V 815 pF @ 15 V AEC-Q101 - TO-252AA Automotive 2.4W (Ta), 32.6W (Tc) -55°C ~ 175°C (TJ)
PJD2NA70_L2_00001

PJD2NA70_L2_00001

700V N-CHANNEL MOSFET

Panjit International Inc.

6,190 -
PJD2NA70_L2_00001

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 2A (Ta) 10V 6.5Ohm @ 1A, 10V Surface Mount 4V @ 250µA 7.8 nC @ 10 V 700 V ±30V 260 pF @ 25 V - - TO-252AA - 39W (Tc) -55°C ~ 150°C (TJ)
IRLR3915TR

IRLR3915TR

MOSFET N-CH 55V 30A DPAK

UMW

7,866 -
IRLR3915TR

数据表

* TO-252-3, DPAK (2 Leads + Tab), SC-63 Active N-Channel MOSFET (Metal Oxide) 30A (Tc) 5V, 10V 14mOhm @ 30A, 10V Surface Mount 3V @ 250µA - 55 V ±16V - - - TO-252 (DPAK) - 120W (Tc) -55°C ~ 155°C (TJ)
IRFR2405TR

IRFR2405TR

MOSFET N-CH 55V 56A DPAK

UMW

2,762 -
IRFR2405TR

数据表

* - Active - - - - - - - - - - - - - - - - -
IRFSL7540PBF

IRFSL7540PBF

MOSFET N-CH 60V 110A TO262

Infineon Technologies

4,211 -
IRFSL7540PBF

数据表

HEXFET®, StrongIRFET™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 110A (Tc) 6V, 10V 5.1mOhm @ 65A, 10V Through Hole 3.7V @ 100µA 130 nC @ 10 V 60 V ±20V 4555 pF @ 25 V - - TO-262 - 160W (Tc) -55°C ~ 175°C (TJ)
IMZA75R027M1HXKSA1

IMZA75R027M1HXKSA1

SILICON CARBIDE MOSFET

Infineon Technologies

239 -
IMZA75R027M1HXKSA1

数据表

CoolSiC™ TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 60A (Tj) 15V, 20V 25mOhm @ 24.5A, 20V Through Hole 5.6V @ 8.8mA 49 nC @ 18 V 750 V +23V, -5V 1668 pF @ 500 V - - PG-TO247-4 - 234W (Tc) -55°C ~ 175°C (TJ)
AOK065V120X2

AOK065V120X2

SILICON CARBIDE MOSFET, ENHANCEM

Alpha & Omega Semiconductor Inc.

118 -
AOK065V120X2

数据表

- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 40.3A (Tc) 15V 85mOhm @ 20A, 15V Through Hole 3.5V @ 250µA 62.3 nC @ 15 V 1200 V +18V, -8V 1716 pF @ 800 V - - TO-247 - 187.5W (Tj) -55°C ~ 175°C (TJ)
NTP60N06L

NTP60N06L

MOSFET N-CH 60V 60A TO220AB

onsemi

2,768 -
NTP60N06L

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 60A (Ta) 5V 16mOhm @ 30A, 5V Through Hole 2V @ 250µA 65 nC @ 5 V 60 V ±15V 3075 pF @ 25 V - - TO-220 - 2.4W (Ta), 150W (Tj) -55°C ~ 175°C (TJ)
STU13NM60N

STU13NM60N

MOSFET N-CH 600V 11A IPAK

STMicroelectronics

7,210 -
STU13NM60N

数据表

MDmesh™ II TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 11A (Tc) 10V 360mOhm @ 5.5A, 10V Through Hole 4V @ 250µA 27 nC @ 10 V 600 V ±25V 790 pF @ 50 V - - TO-251 (IPAK) - 90W (Tc) 150°C (TJ)
FQPF12N60

FQPF12N60

MOSFET N-CH 600V 5.8A TO220F

onsemi

9,744 -
FQPF12N60

数据表

QFET® TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 5.8A (Tc) 10V 700mOhm @ 2.9A, 10V Through Hole 5V @ 250µA 54 nC @ 10 V 600 V ±30V 1900 pF @ 25 V - - TO-220F-3 - 55W (Tc) -55°C ~ 150°C (TJ)
BUZ30A

BUZ30A

MOSFET N-CH 200V 21A TO220-3

Infineon Technologies

9,090 -
BUZ30A

数据表

SIPMOS® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 21A (Tc) 10V 130mOhm @ 13.5A, 10V Through Hole 4V @ 1mA - 200 V ±20V 1900 pF @ 25 V - - PG-TO220-3-1 - 125W (Tc) -55°C ~ 150°C (TJ)
IRFR13N20DTR

IRFR13N20DTR

MOSFET N-CH 200V 13A DPAK

Infineon Technologies

6,220 -
IRFR13N20DTR

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 13A (Tc) 10V 235mOhm @ 8A, 10V Surface Mount 5.5V @ 250µA 38 nC @ 10 V 200 V ±30V 830 pF @ 25 V - - TO-252AA (DPAK) - 110W (Tc) -55°C ~ 175°C (TJ)
IRFR13N20DTRR

IRFR13N20DTRR

MOSFET N-CH 200V 13A DPAK

Infineon Technologies

9,830 -
IRFR13N20DTRR

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 13A (Tc) 10V 235mOhm @ 8A, 10V Surface Mount 5.5V @ 250µA 38 nC @ 10 V 200 V ±30V 830 pF @ 25 V - - TO-252AA (DPAK) - 110W (Tc) -55°C ~ 175°C (TJ)
IRFB4115PBFXKMA1

IRFB4115PBFXKMA1

TRENCH >=100V

Infineon Technologies

4,489 -
IRFB4115PBFXKMA1

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 104A (Tc) 10V 11mOhm @ 62A, 10V Through Hole 5V @ 250µA 120 nC @ 10 V 150 V ±20V 5270 pF @ 50 V - - TO-220AB - 380W (Tc) -55°C ~ 175°C (TJ)
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