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场效应晶体管（FETs）、MOSFETs

制造商	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
Alpha & Omega Semiconductor Inc. Analog Power Inc. ANBON SEMICONDUCTOR (INT'L) LIMITED APSEMI Bruckewell Cambridge GaN Devices Central Semiconductor Corp Coherent Corp Comchip Technology CoolCAD Diodes Incorporated Diotec Semiconductor EPC EPC Space, LLC EVVO Fairchild Semiconductor Fairchild/ON Semiconductor fastSiC Flip Electronics GaNPower GeneSiC Semiconductor Goford Semiconductor Good-Ark Semiconductor Harris Corporation Honeywell Aerospace HY Electronic (Cayman) Limited IceMOS Technology Infineon Technologies International Rectifier Intersil Inventchip IXYS IXYS Integrated Circuits Division Linear Integrated Systems, Inc. Littelfuse Inc. MaxLinear, Inc. MDD Meritek Micro Commercial Co Microchip Technology Microsemi Corporation Motorola National Semiconductor NEC Corporation Nexperia USA Inc. NextGen Components Group NoMIS Power NovuSem Nuvoton Technology Corporation NXP Semiconductors onsemi Panasonic - BSG Panjit International Inc. PN Junction Semiconductor Qorvo Quest Semi Rectron USA Renesas ROHM Semiconductor Sanken Electric USA Inc. Sanyo SemiQ Shenzhen Slkormicro Semicon Co., Ltd. Siemens Siliconix Skyworks Solutions Inc. SMC Diode Solutions SparkFun Electronics STMicroelectronics Taiwan Semiconductor Corporation Texas Instruments Torex Semiconductor Ltd Toshiba Semiconductor and Storage Transphorm TT Electronics/Optek Technology UMW Venkel Vicor Corporation Vishay Vishay General Semiconductor - Diodes Division Vishay Siliconix WeEn Semiconductors Wise-Integration Wolfspeed, Inc. YAGEO XSemi

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厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
IRF3717TR MOSFET N-CH 20V 20A 8SO Infineon Technologies	3,315	-	询价单	数据表	HEXFET®	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	20A (Ta)	4.5V, 10V	4.4mOhm @ 20A, 10V	Surface Mount	2.45V @ 250µA	33 nC @ 4.5 V	20 V	±20V	2890 pF @ 10 V	-	-	8-SO	-	2.5W (Ta)	-55°C ~ 150°C (TJ)
IMDQ75R027M1HXUMA1 IMDQ75R027M1HXUMA1 Infineon Technologies	708	-	询价单	数据表	CoolSiC™	22-PowerBSOP Module	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	64A (Tj)	15V, 20V	25mOhm @ 24.5A, 20V	Surface Mount	5.6V @ 8.8mA	49 nC @ 18 V	750 V	+20V, -2V	1668 pF @ 500 V	-	-	PG-HDSOP-22-1	-	273W (Tc)	-55°C ~ 175°C (TJ)
NVH4L070N120M3S SILICON CARBIDE (SIC) MOSFET-ELI onsemi	222	-	询价单	数据表	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	34A (Tc)	18V	87mOhm @ 15A, 18V	Through Hole	4.4V @ 7mA	57 nC @ 18 V	1200 V	+22V, -10V	1230 pF @ 800 V	AEC-Q101	-	TO-247-4L	Automotive	160W (Tc)	-55°C ~ 175°C (TJ)
PJMK040N60EC_T0_00201 600V/ 40M / 71A/ EASY TO DRIVER Panjit International Inc.	690	-	询价单	数据表	-	-	Tube	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
AOK065V65X2 MOSFET N-CH 650V 40.3A TO247 Alpha & Omega Semiconductor Inc.	225	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	40.3A (Tc)	15V	85mOhm @ 10A, 15V	Through Hole	3.5V @ 10mA	58.8 nC @ 15 V	650 V	+15V, -5V	1762 pF @ 400 V	-	-	TO-247	-	187.5W (Ta)	-55°C ~ 175°C (TJ)
DIW170SIC070 SIC MOSFET, TO-247-3L, N, 70A, 1 Diotec Semiconductor	150	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	70A (Tc)	20V	22.3mOhm @ 40A, 20V	Through Hole	4V @ 10mA	80 nC @ 18 V	1700 V	+20V, -5V	6000 pF @ 1200 V	-	-	TO-247	-	416W (Tc)	-55°C ~ 150°C (TJ)
AOT1404L MOSFET N-CH 40V 15A/220A TO220 Alpha & Omega Semiconductor Inc.	5,598	-	询价单	数据表	-	TO-220-3	Tube	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	15A (Ta), 220A (Tc)	10V	4.2mOhm @ 20A, 10V	Through Hole	3.7V @ 250µA	86 nC @ 10 V	40 V	±20V	4300 pF @ 20 V	-	-	TO-220	-	2.1W (Ta), 417W (Tc)	-55°C ~ 175°C (TJ)
HUF75343S3 MOSFET N-CH 55V 75A I2PAK onsemi	8,047	-	询价单	数据表	UltraFET™	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	75A (Tc)	10V	9mOhm @ 75A, 10V	Through Hole	4V @ 250µA	205 nC @ 20 V	55 V	±20V	3000 pF @ 25 V	-	-	TO-262 (I2PAK)	-	270W (Tc)	-55°C ~ 175°C (TJ)
STK800 MOSFET N-CH 30V 20A POLARPAK STMicroelectronics	17	-	询价单	数据表	STripFET™	PolarPak®	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	20A (Tc)	4.5V, 10V	7.8mOhm @ 10A, 10V	Surface Mount	2.5V @ 250µA	13.4 nC @ 4.5 V	30 V	±16V	1380 pF @ 25 V	-	-	PolarPak®	-	5.2W (Tc)	-55°C ~ 150°C (TJ)
IPQC60R017S7XTMA1 MOSFET Infineon Technologies	750	-	询价单	数据表	CoolMOS™ S7	22-PowerBSOP Module	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	30A (Tc)	12V	17mOhm @ 29A, 12V	Surface Mount	4.5V @ 1.89mA	196 nC @ 12 V	600 V	±20V	7370 pF @ 300 V	-	-	PG-HDSOP-22	-	500W (Tc)	-55°C ~ 150°C (TJ)
IPDQ60R017S7XTMA1 MOSFET Infineon Technologies	695	-	询价单	数据表	CoolMOS™ S7	22-PowerBSOP Module	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	30A (Tc)	12V	17mOhm @ 29A, 12V	Surface Mount	4.5V @ 1.89mA	196 nC @ 12 V	600 V	±20V	7370 pF @ 300 V	-	-	PG-HDSOP-22-1	-	500W (Tc)	-55°C ~ 150°C (TJ)
SIHG64N65E-GE3 MOSFET N-CH 650V 64A TO247AC Vishay Siliconix	481	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	64A (Tc)	10V	47mOhm @ 32A, 10V	Through Hole	4V @ 250µA	369 nC @ 10 V	650 V	±30V	7497 pF @ 100 V	-	-	TO-247AC	-	520W (Tc)	-55°C ~ 150°C (TJ)
SCT4026DWATL 750V, 51A, 7-PIN SMD, TRENCH-STR Rohm Semiconductor	946	-	询价单	数据表	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	51A (Tc)	18V	34mOhm @ 29A, 18V	Surface Mount	4.8V @ 15.4mA	94 nC @ 18 V	750 V	+21V, -4V	2320 pF @ 500 V	-	-	TO-263-7LA	-	-	175°C (TJ)
AIMBG75R027M1HXTMA1 AIMBG75R027M1HXTMA1 Infineon Technologies	1,183	-	询价单	数据表	CoolSiC™	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	64A (Tj)	15V, 20V	25mOhm @ 24.5A, 20V	Surface Mount	5.6V @ 8.8mA	49 nC @ 18 V	750 V	+23V, -5V	1668 pF @ 500 V	AEC-Q101	-	PG-TO263-7	Automotive	273W (Tc)	-55°C ~ 175°C (TJ)
AOK065V120X2Q 1200V SILICON CARBIDE MOSFET Alpha & Omega Semiconductor Inc.	240	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	40.3A (Tc)	15V	85mOhm @ 10A, 15V	Through Hole	3.5V @ 10mA	62.3 nC @ 15 V	1200 V	+15V, -5V	1716 pF @ 800 V	AEC-Q101	-	TO-247	Automotive	187.5W (Tj)	-55°C ~ 175°C (TJ)
NVH4L040N65S3F MOSFET N-CH 650V 65A TO247-4 onsemi	448	-	询价单	数据表	SuperFET® III, FRFET®	TO-247-4	Tube	Active	N-Channel	MOSFET (Metal Oxide)	65A (Tc)	-	40mOhm @ 32.5A, 10V	Through Hole	5V @ 2.1mA	160 nC @ 10 V	650 V	±30V	5665 pF @ 400 V	AEC-Q101	-	TO-247-4L	Automotive	446W (Tc)	-55°C ~ 150°C (TJ)
G3F40MT12J-TR 1200V 40M TO-263-7 G3F SIC MOSFE GeneSiC Semiconductor	800	-	询价单	数据表	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	59A (Tc)	18V	53mOhm @ 20A, 18V	Surface Mount	4.3V @ 16mA	86 nC @ 18 V	1200 V	+22V, -10V	2023 pF @ 800 V	AEC-Q101	-	TO-263-7	Automotive	270W (Tc)	-55°C ~ 175°C (TJ)
E4M0045075K1 MOSFETS AUTOMOTIVE 139W 3.8V NC Wolfspeed, Inc.	254	-	询价单	数据表	E	TO-247-4	Bulk	Active	N-Channel	SiCFET (Silicon Carbide)	42A (Tc)	15V	60mOhm @ 17.6A, 15V	Through Hole	3.8V @ 4.84mA	65 nC @ 15 V	750 V	+19V, -8V	1606 pF @ 500 V	AEC-Q101	-	TO-247-4L	Automotive	139W (Tc)	-55°C ~ 175°C (TJ)
IMW65R026M2HXKSA1 IMW65R026M2HXKSA1 Infineon Technologies	390	-	询价单	数据表	CoolSiC™	TO-247-3	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	64A (Tc)	15V, 20V	24mOhm @ 34.5A, 20V	Through Hole	5.6V @ 7mA	42 nC @ 18 V	650 V	+23V, -7V	1499 pF @ 400 V	-	-	PG-TO247-3-40	-	227W (Tc)	-55°C ~ 175°C (TJ)
S3M0040120J MOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions	300	-	询价单	数据表	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	76A (Tc)	18V	52mOhm @ 40A, 18V	Surface Mount	4V @ 16mA	143 nC @ 18 V	1200 V	+20V, -8V	2844 pF @ 1000 V	-	-	TO-263-7	-	600W (Tc)	-55°C ~ 175°C (TJ)

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