富聪科技订单满¥1000免运费
关注我们:

场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

全部重置
全部应用
结果
图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
IPD079N06L3GBTMA1

IPD079N06L3GBTMA1

MOSFET N-CH 60V 50A TO252-3

Infineon Technologies

5,561 -
IPD079N06L3GBTMA1

数据表

OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 50A (Tc) 4.5V, 10V 7.9mOhm @ 50A, 10V Surface Mount 2.2V @ 34µA 29 nC @ 4.5 V 60 V ±20V 4900 pF @ 30 V - - PG-TO252-3 - 79W (Tc) -55°C ~ 175°C (TJ)
IRFH5206TRPBF

IRFH5206TRPBF

MOSFET N-CH 60V 16A/89A 8PQFN

Infineon Technologies

9,001 -
IRFH5206TRPBF

数据表

HEXFET® 8-PowerVDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 16A (Ta), 89A (Tc) 10V 6.7mOhm @ 50A, 10V Surface Mount 4V @ 100µA 60 nC @ 10 V 60 V ±20V 2490 pF @ 25 V - - 8-PQFN (5x6) - 3.6W (Ta), 100W (Tc) -55°C ~ 150°C (TJ)
NTDV20P06LT4G

NTDV20P06LT4G

MOSFET P-CH 60V 15.5A DPAK

onsemi

2,319 -
NTDV20P06LT4G

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 15.5A (Ta) 10V 150mOhm @ 7.5A, 5V Surface Mount 2V @ 250µA 26 nC @ 5 V 60 V ±20V 1190 pF @ 25 V - - DPAK - 65W (Tc) -55°C ~ 175°C (TJ)
AOD464

AOD464

MOSFET N-CH 105V 40A TO252

Alpha & Omega Semiconductor Inc.

6,595 -
AOD464

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40A (Tc) 6V, 10V 28mOhm @ 20A, 10V Surface Mount 4V @ 250µA 46 nC @ 10 V 105 V ±25V 2445 pF @ 25 V - - TO-252 (DPAK) - 2.3W (Ta), 100W (Tc) -55°C ~ 175°C (TJ)
FDD9411L-F085

FDD9411L-F085

MOSFET N-CH 40V 25A TO252

onsemi

8,018 -
FDD9411L-F085

数据表

PowerTrench® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 25A (Tc) 4.5V, 10V 7mOhm @ 20A, 10V Surface Mount 3V @ 250µA 27 nC @ 10 V 40 V ±20V 1210 pF @ 20 V AEC-Q101 - TO-252AA Automotive 48.4W (Tj) -55°C ~ 175°C (TJ)
PJQ5444_R2_00001

PJQ5444_R2_00001

40V P-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

2,306 -
PJQ5444_R2_00001

数据表

- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 12.7A (Ta), 70A (Tc) 4.5V, 10V 6.5mOhm @ 20A, 10V Surface Mount 2.5V @ 250µA 17 nC @ 4.5 V 40 V ±20V 1759 pF @ 25 V - - DFN5060-8 - 2W (Ta), 83W (Tc) -55°C ~ 150°C (TJ)
PSMNR70-40YSNX

PSMNR70-40YSNX

PSMNR70-40YSN/SOT1023/LFPAK56E

Nexperia USA Inc.

9,477 -
PSMNR70-40YSNX

数据表

- SOT-1023, 4-LFPAK Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 320A (Ta) 10V 0.81Ohm @ 25A, 10V Surface Mount 3.6V @ 1mA 235 nC @ 10 V 40 V ±20V 14307 pF @ 25 V - Schottky Diode (Body) LFPAK56, Power-SO8 - 333W (Ta) -55°C ~ 175°C (TJ)
FQP65N06

FQP65N06

MOSFET N-CH 60V 65A TO220-3

onsemi

6,466 -
FQP65N06

数据表

QFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 65A (Tc) 10V 16mOhm @ 32.5A, 10V Through Hole 4V @ 250µA 65 nC @ 10 V 60 V ±25V 2410 pF @ 25 V - - TO-220-3 - 150W (Tc) -55°C ~ 175°C (TJ)
IRF6645

IRF6645

MOSFET N-CH 100V 5.7A DIRECTFET

Infineon Technologies

9,901 -
IRF6645

数据表

HEXFET® DirectFET™ Isometric SJ Tube Obsolete N-Channel MOSFET (Metal Oxide) 5.7A (Ta), 25A (Tc) 10V 35mOhm @ 5.7A, 10V Surface Mount 4.9V @ 50µA 20 nC @ 10 V 100 V ±20V 890 pF @ 25 V - - DIRECTFET™ SJ - 3W (Ta), 42W (Tc) -40°C ~ 150°C (TJ)
2SK2848

2SK2848

MOSFET N-CH 600V 2A TO220F

Sanken Electric USA Inc.

4,108 -
2SK2848

数据表

- TO-220-3 Full Pack Bulk Not For New Designs N-Channel MOSFET (Metal Oxide) 2A (Ta) 10V 3.8Ohm @ 1A, 10V Through Hole 4V @ 250µA - 600 V ±30V 290 pF @ 10 V - - TO-220F - 30W (Tc) 150°C (TJ)
IRF710L

IRF710L

MOSFET N-CH 400V 2A I2PAK

Vishay Siliconix

4,837 -
IRF710L

数据表

- TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 2A (Tc) 10V 3.6Ohm @ 1.2A, 10V Through Hole 4V @ 250µA 17 nC @ 10 V 400 V ±20V 170 pF @ 25 V - - I2PAK - - -55°C ~ 150°C (TJ)
IRF9520NSTRR

IRF9520NSTRR

MOSFET P-CH 100V 6.8A D2PAK

Infineon Technologies

9,861 -
IRF9520NSTRR

数据表

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 6.8A (Tc) 10V 480mOhm @ 4A, 10V Surface Mount 4V @ 250µA 27 nC @ 10 V 100 V ±20V 350 pF @ 25 V - - D2PAK - 3.8W (Ta), 48W (Tc) -55°C ~ 175°C (TJ)
IPB029N15NM6ATMA1

IPB029N15NM6ATMA1

TRENCH >=100V

Infineon Technologies

1,830 -
IPB029N15NM6ATMA1

数据表

OptiMOS™ 6 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 24A (Ta), 165A (Tc) 8V, 15V 2.8mOhm @ 100A, 15V Surface Mount 4V @ 276µA 137 nC @ 10 V 150 V ±20V 9900 pF @ 75 V - - PG-TO263-3-2 - 3.8W (Ta), 395W (Tc) -55°C ~ 175°C (TJ)
CMS70N10H8-HF

CMS70N10H8-HF

MOSFET N-CH 100V 70A DFN5X6

Comchip Technology

8,795 -
CMS70N10H8-HF

数据表

- 8-PowerTDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 70A (Tc) 4.5V, 10V 6.5mOhm @ 20A, 10V Surface Mount 2.5V @ 250µA 58.2 nC @ 10 V 100 V +20V, -12V 4570 pF @ 25 V - - DFN5x6 (PR-PAK) - 2W (Ta), 142W (Tc) -50°C ~ 150°C (TJ)
NTBL060N065SC1

NTBL060N065SC1

M2 650V SIC MOSFET 60MOHM WITH T

onsemi

1,998 -
NTBL060N065SC1

数据表

- 8-PowerSFN Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 46A (Tc) 15V, 18V 70mOhm @ 20A, 18V Surface Mount 4.3V @ 6.5mA 74 nC @ 18 V 650 V +22V, -8V 1473 pF @ 325 V - - 8-HPSOF - 170W (Tc) -55°C ~ 175°C (TJ)
PHP20NQ20T,127

PHP20NQ20T,127

MOSFET N-CH 200V 20A TO220AB

Nexperia USA Inc.

4,393 -
PHP20NQ20T,127

数据表

TrenchMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 20A (Tc) 10V 130mOhm @ 10A, 10V Through Hole 4V @ 1mA 65 nC @ 10 V 200 V ±20V 2470 pF @ 25 V - - TO-220AB - 150W (Tc) -55°C ~ 175°C (TJ)
PSMN1R8-80SSFJ

PSMN1R8-80SSFJ

NEXTPOWER 80/100V MOSFETS

Nexperia USA Inc.

1,771 -
PSMN1R8-80SSFJ

数据表

- SOT-1235 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 270A (Tc) 7V, 10V 1.8mOhm @ 25A, 10V Surface Mount 4V @ 1mA 222 nC @ 10 V 80 V ±20V 15319 pF @ 40 V - - LFPAK88 (SOT1235) - 341W (Tc) -55°C ~ 175°C (TJ)
PSMN2R0-100SSFJ

PSMN2R0-100SSFJ

NEXTPOWER 80/100V MOSFETS

Nexperia USA Inc.

1,754 -
PSMN2R0-100SSFJ

数据表

- SOT-1235 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 267A (Tc) 7V, 10V 2.07mOhm @ 25A, 10V Surface Mount 4V @ 1mA 242 nC @ 10 V 100 V ±20V 16140 pF @ 50 V - - LFPAK88 (SOT1235) - 341W (Tc) -55°C ~ 175°C (TJ)
XP10N3R8S

XP10N3R8S

MOSFET N CH 100V 132A TO-263

YAGEO XSEMI

9,580 -
XP10N3R8S

数据表

XP10N3R8 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 132A (Tc) 10V 3.88mOhm @ 60A, 10V Surface Mount 4V @ 250µA 136 nC @ 10 V 100 V ±20V 6560 pF @ 80 V - - TO-263 - 3.12W (Ta), 125W (Tc) -55°C ~ 150°C (TJ)
SIHH085N60EF-T1GE3

SIHH085N60EF-T1GE3

EF SERIES POWER MOSFET WITH FAST

Vishay Siliconix

5,665 -
SIHH085N60EF-T1GE3

数据表

EF 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30A (Tc) 10V 85mOhm @ 17A, 10V Surface Mount 5V @ 250µA 63 nC @ 10 V 600 V ±30V 2733 pF @ 100 V - - PowerPAK® 8 x 8 - 184W (Tc) -55°C ~ 150°C (TJ)
富聪科技

搜索

富聪科技

产品

富聪科技

电话

富聪科技

用户